公开(公告)号：US06750542B2

公开(公告)日：2004-06-15

申请号：US10257404

申请日：2002-10-21

申请人： Yukinobu Suzuki ,  Takashi Ishigami ,  Yasuo Kohsaka ,  Naomi Fujioka ,  Takashi Watanabe ,  Koichi Watanabe ,  Kenya Sano

发明人： Yukinobu Suzuki ,  Takashi Ishigami ,  Yasuo Kohsaka ,  Naomi Fujioka ,  Takashi Watanabe ,  Koichi Watanabe ,  Kenya Sano

IPC分类号： H01L2348

CPC分类号： H01L21/7687 ,  C23C14/0641 ,  C23C14/3414 ,  H01L21/2855 ,  H01L21/28568 ,  H01L28/55 ,  H01L28/75

摘要： A sputter target is made of a Ti—Al alloy containing Al in the range of 1 to 30 atm %. In the Ti—Al alloy constituting the sputter target, Al exists in at least one of a solid solution state in Ti and a state in which Al forms an intermetallic compound with Ti, and variation in Al content in the entire target is limited within 10%. Furthermore, an average crystal grain diameter of the Ti—Al alloy is 500 &mgr;m or less, and variation in crystal grain diameter in the entire target is limited within 30%. A Ti—Al—N film as a barrier film is formed by using the sputter target made of the Ti—Al alloy as described above. An electronic component includes a barrier film formed on a semiconductor substrate.

摘要翻译： 溅射靶由含有1〜30atm％的Al的Ti-Al合金构成。 在构成溅射靶的Ti-Al合金中，Al以Ti中的固溶态和Al与Ti形成金属间化合物的状态中的至少一种存在，并且整个靶中的Al含量的变化被限制在10 ％。 此外，Ti-Al合金的平均晶粒直径为500μm以下，整个靶的晶粒直径的变化被限制在30％以内。 通过使用如上所述的由Ti-Al合金制成的溅射靶，形成作为阻挡膜的Ti-Al-N膜。 电子部件包括形成在半导体基板上的阻挡膜。

公开(公告)号：US09437486B2

公开(公告)日：2016-09-06

申请号：US13280873

申请日：2011-10-25

申请人： Koichi Watanabe ,  Yasuo Kohsaka ,  Takashi Watanabe ,  Takashi Ishigami ,  Yukinobu Suzuki ,  Naomi Fujioka

发明人： Koichi Watanabe ,  Yasuo Kohsaka ,  Takashi Watanabe ,  Takashi Ishigami ,  Yukinobu Suzuki ,  Naomi Fujioka

IPC分类号： C22C27/02 ,  C23C14/34 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C14/3414

摘要： A sputtering target contains high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within ±30% as a whole target. Dispersion of the oxygen content is within ±80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.

摘要翻译： 溅射靶包含Ta含量为3000ppm以下且氧含量为200ppm以下的高纯度Nb。 所有溅射靶中的Ta含量的分散在整个靶内的±30％以内。 氧含量的分散在整个目标的±80％以内。 根据这样的溅射靶，可以实现低电阻率的互连膜。 此外，溅射靶中的每个晶粒的晶粒直径在平均粒径的0.1〜10倍的范围内，相邻晶粒的晶粒比例在0.1〜10的范围内。根据这样的溅射靶， 巨大的尘埃可以大大的抑制发生。 溅射靶适合于形成作为Al互连的衬垫材料的Nb膜。

公开(公告)号：US20120038050A1

公开(公告)日：2012-02-16

申请号：US13280873

申请日：2011-10-25

申请人： Koichi WATANABE ,  Yasuo Kohsaka ,  Takashi Watanabe ,  Takashi Ishigami ,  Yukinobu Suzuki ,  Naomi Fujioka

发明人： Koichi WATANABE ,  Yasuo Kohsaka ,  Takashi Watanabe ,  Takashi Ishigami ,  Yukinobu Suzuki ,  Naomi Fujioka

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C14/3414

摘要： A sputtering target consists of high purity Nb of which Ta content is 3000 ppm or less and oxygen content is 200 ppm or less. Dispersion of the Ta content in all the sputtering target is within ±30% as a whole target. Dispersion of the oxygen content is within ±80% as a whole target. According to such sputtering target, an interconnection film of low resistivity can be realized. In addition, each grain of Nb in the sputtering target has a grain diameter in the range of 0.1 to 10 times an average grain diameter and ratios of grain sizes of adjacent grains are in the range of 0.1 to 10. According to such sputtering target, giant dust can be largely suppressed from occurring. The sputtering target is suitable for forming a Nb film as liner material of an Al interconnection.

摘要翻译： 溅射靶由Ta含量为3000ppm以下，氧含量为200ppm以下的高纯Nb构成。 所有溅射靶中的Ta含量的分散在整个靶内的±30％以内。 氧含量的分散在整个目标的±80％以内。 根据这样的溅射靶，可以实现低电阻率的互连膜。 此外，溅射靶中的每个晶粒的晶粒直径在平均粒径的0.1〜10倍的范围内，相邻晶粒的晶粒比例在0.1〜10的范围内。根据这样的溅射靶， 巨大的尘埃可以大大的抑制发生。 溅射靶适合于形成作为Al互连的衬垫材料的Nb膜。

公开(公告)号：US20050029094A1

公开(公告)日：2005-02-10

申请号：US10363257

申请日：2001-09-03

申请人： Koichi Watanabe ,  Yoichiro Yabe ,  Takashi Ishigami ,  Takashi Watanabe ,  Hitoshi Aoyama ,  Yasuo Kohsaka ,  Yukinobu Suzuki

发明人： Koichi Watanabe ,  Yoichiro Yabe ,  Takashi Ishigami ,  Takashi Watanabe ,  Hitoshi Aoyama ,  Yasuo Kohsaka ,  Yukinobu Suzuki

IPC分类号： C23C14/34 ,  C23C14/00

CPC分类号： C23C14/3414

摘要： The tungsten sputtering target of the present invention is characterized in that a half band width of a peak corresponding to a crystal plane (110) of the target is 0.35 or less when a surface of the target to be sputtered is analyzed by X-ray diffraction. Further, the method of manufacturing the tungsten sputtering target of the present invention is characterized by comprising the steps of: pressing a high purity tungsten powder to form a pressed compact; sintering the pressed compact to form a sintered body; working the sintered body to obtain a shape of a target; subjecting the target to a grinding work of at least one of rotary grinding and polishing; and subjecting the target to a finishing work of at least one of etching and reverse sputtering. According to the above structure, there can be provided a tungsten sputtering target and method of manufacturing the target capable of improving the in-plain uniformity in thickness of the W thin film formed on a substrate, and capable of effectively reducing the generation of the particles.

摘要翻译： 本发明的钨溅射靶的特征在于，当通过X射线衍射分析待溅射靶的表面时，对应于靶的晶面（110）的峰的半带宽为0.35以下 。 此外，本发明的钨溅射靶的制造方法的特征在于包括以下步骤：将高纯度钨粉按压以形成压制成型体; 烧结压制成型体的烧结体; 加工烧结体以获得靶的形状; 使目标进行旋转研磨和抛光中的至少一个的研磨工作; 并对靶进行蚀刻和反溅镀中的至少一种的精加工。 根据上述结构，可以提供一种钨溅射靶和能够提高形成在基板上的W薄膜的厚度均匀性均匀化的靶的方法，能够有效地减少粒子的产生 。

公开(公告)号：US07718117B2

公开(公告)日：2010-05-18

申请号：US10363257

申请日：2001-09-03

申请人： Koichi Watanabe ,  Yoichiro Yabe ,  Takashi Ishigami ,  Takashi Watanabe ,  Hitoshi Aoyama ,  Yasuo Kohsaka ,  Yukinobu Suzuki

发明人： Koichi Watanabe ,  Yoichiro Yabe ,  Takashi Ishigami ,  Takashi Watanabe ,  Hitoshi Aoyama ,  Yasuo Kohsaka ,  Yukinobu Suzuki

IPC分类号： B22F1/02 ,  C23C14/00

CPC分类号： C23C14/3414

摘要： A method of manufacturing a tungsten sputtering target includes pressing a high purity tungsten powder to form a pressed compact, first sintering the pressed compact at a temperature of 1450-1700° C. for one hour or longer after the pressed compact is heated at a heating-up rate of 2-5° C./min on the way to a maximum sintering temperature, second sintering the pressed compact to form a sintered body at a temperature of 1900° C. or higher for 5 hours or longer, working the sintered body to obtain a shape of a target, subjecting the target to a grinding work of at least one of rotary grinding and polishing, and subjecting the target to a finishing work of at least one of etching and reverse sputtering.

摘要翻译： 制造钨溅射靶的方法包括：将高纯度钨粉压制成压制成形体，首先在压制成型体在加热加热后，在1450-1700℃的温度下烧结1小时以上的压制成形体 在最高烧结温度的途中为2-5℃/分钟，在1900℃以上的温度下烧结压制成型体以烧结体5小时以上，加工烧结体 以获得目标的形状，对所述目标进行旋转研磨和抛光中的至少一个的研磨加工，以及对所述靶进行蚀刻和反向溅射中的至少一种的精加工。

公开(公告)号：US20090134020A1

公开(公告)日：2009-05-28

申请号：US12091832

申请日：2006-11-02

申请人： Yukinobu Suzuki ,  Koichi Watanabe ,  Toshiya Sakamoto ,  Michio Sato ,  Yasuo Kohsaka

发明人： Yukinobu Suzuki ,  Koichi Watanabe ,  Toshiya Sakamoto ,  Michio Sato ,  Yasuo Kohsaka

IPC分类号： C23C14/34 ,  B29C65/00 ,  B29C65/02

CPC分类号： C23C4/00 ,  C23C4/02 ,  C23C14/3414 ,  C23C26/00 ,  C23C28/023 ,  C23C28/028 ,  H01J37/3414

摘要： There are provided a sputtering target and a process for producing a sputtering target. The sputtering target includes a first layer located on its side to be sputter treated and a second layer located on its side not to be sputter treated. The first and second layers are bonded to each other through a bonding interface between the first layer and the second layer. The sputtering target satisfying the following requirements X and Y: requirement X: A/B≦1.5 and requirement Y: A/C≦1.5, wherein A represents an oxygen peak value for the bonding interface; B represents an oxygen peak value for the first layer; and C represents an oxygen peak value for the second layer. The sputtering target is advantageous in that a spent sputtering target can be recycled to utilize resources and can form a thin film while effectively preventing the occurrence of abnormal discharge and splash.

摘要翻译： 提供溅射靶和溅射靶的制造方法。 溅射靶包括位于其被溅射处理侧的第一层和位于其不被溅射处理的一侧的第二层。 第一层和第二层通过第一层和第二层之间的结合界面彼此结合。 满足以下要求X和Y的溅射靶：要求X：A / B <= 1.5，要求Y：A / C <= 1.5，其中A表示接合界面的氧峰值; B表示第一层的氧峰值; C表示第二层的氧峰值。 溅射靶的优点在于，废弃溅射靶可以循环利用资源，并且可以形成薄膜，同时有效地防止异常放电和飞溅的发生。

公开(公告)号：US4449816A

公开(公告)日：1984-05-22

申请号：US262550

申请日：1981-05-11

申请人： Yasuo Kohsaka ,  Yoshihiro Nonaka ,  Hideo Tachibana

发明人： Yasuo Kohsaka ,  Yoshihiro Nonaka ,  Hideo Tachibana

IPC分类号： G01N15/06 ,  G01N1/00 ,  G01N15/02

CPC分类号： G01N15/065

摘要： A method and a system for measuring the number of hyperfine particles comprising the step in which an air aerosol containing fine particles is led into a saturated vapor chamber and a high temperature saturated vapor chamber, respectively, to produce saturated vapor aerosols, the step in which the two saturated vapor aerosols produced as aforenoted are led into a mixing chamber, so that the aforementioned vapor is condensed on the aerosol particles as the nuclei, thereby achieving growth of the aforementioned fine particles, and the step for measuring the number of the said fine particles grown in that way.

摘要翻译： 一种用于测量超细颗粒数量的方法和系统，包括分别将含有微粒的空气气溶胶引入饱和蒸气室和高温饱和蒸气室的步骤，以产生饱和蒸气气溶胶，其中 将如上制造的两个饱和蒸汽气溶胶引入混合室中，使上述蒸汽作为核在冷凝在气溶胶颗粒上，从而实现上述细颗粒的生长，并且测量所述精细数 以这种方式生长的颗粒。

公开(公告)号：US5913100A

公开(公告)日：1999-06-15

申请号：US663251

申请日：1996-09-06

申请人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

发明人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

IPC分类号： B22F1/00 ,  C22C27/04 ,  C23C14/34 ,  G02F1/1362 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532 ,  B22F3/00

CPC分类号： H01L28/60 ,  B22F1/0003 ,  C22C27/04 ,  C23C14/3414 ,  G02F1/136286 ,  H01L21/76838 ,  H01L23/53257 ,  G02F2001/136295 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/2951

摘要： A Mo-W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo-W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo-W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo-W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo-W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo-W wiring thin film to be produced with high repeatability.

摘要翻译： PCT No.PCT / JP94 / 02095 Sec。 371日期1996年9月6日 102（e）1996年9月6日PCT PCT 1994年12月14日PCT公布。 公开号WO95 / 16797 日期：1995年6月22日公开了用于形成配线的Mo-W材料，其整体观察包含20至95％的钨，余量为钼和不可避免的杂质的原子百分数。 用于配线的Mo-W材料是通过粉末冶金技术或冶炼技术将Mo材料和W材料混合并整合得到的产品，或通过将所述材料以所述百分比组成计算的量排列得到的产品 以上。 含有20〜95％范围内的W的Mo-W材料表现出低电阻，同时在蚀刻剂的可加工性和耐受性方面优异。 将由该百分比组成的Mo-W合金形成的布线薄膜用作液晶显示装置的地址布线等。 用于形成配线的Mo-W靶由原子百分数20〜95％的钨和余量的钼和不可避免的杂质构成，能够以高重复性制造Mo-W布线薄膜。

公开(公告)号：US06200694B1

公开(公告)日：2001-03-13

申请号：US09203678

申请日：1998-12-01

申请人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

发明人： Yasuo Kohsaka ,  Yoshiharu Fukasawa ,  Yoshiko Tsuji ,  Mitsushi Ikeda ,  Michio Sato ,  Toshihiro Maki

IPC分类号： H01L2978

CPC分类号： H01L28/60 ,  B22F1/0003 ,  C22C27/04 ,  C23C14/3414 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L21/76838 ,  H01L23/53257 ,  H01L2924/0002 ,  Y10T428/12014 ,  Y10T428/12826 ,  Y10T428/1284 ,  Y10T428/2951 ,  H01L2924/00

摘要： A Mo—W material for the formation of wirings is discloses which, as viewed integrally, comprises 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage. The Mo—W material for wirings is a product obtained by compounding and integrating a Mo material and a W material as by the powder metallurgy technique or the smelting technique or a product obtained by arranging these materials in amounts calculated to account for the percentage composition mentioned above. The Mo—W material containing W in a proportion in the range of from 20 to 95% manifests low resistance and, at the same time, excels in workability and tolerance for etchants. The wiring thin film which is formed of the Mo—W alloy of this percentage composition is used as address wirings and others for liquid crystal display devices. The Mo—W target for the formation of wirings is composed of 20 to 95% of tungsten and the balance of molybdenum and inevitable impurities by atomic percentage and allows the Mo—W wiring thin film to be produced with high repeatability.

摘要翻译： 公开了用于形成布线的Mo-W材料，其一体地观察到包含20-95％的钨，余量为钼和不可避免的杂质的原子百分数。 用于配线的Mo-W材料是通过粉末冶金技术或冶炼技术将Mo材料和W材料混合并整合得到的产品，或通过将所述材料以所述百分比组成计算的量排列得到的产品 以上。 含有20〜95％范围内的W的Mo-W材料表现出低电阻，同时在蚀刻剂的可加工性和耐受性方面优异。 将由该百分比组成的Mo-W合金形成的布线薄膜用作液晶显示装置的地址布线等。 用于形成配线的Mo-W靶由原子百分数20〜95％的钨和余量的钼和不可避免的杂质构成，能够以高重复性制造Mo-W布线薄膜。

公开(公告)号：US4761074A

公开(公告)日：1988-08-02

申请号：US029635

申请日：1987-03-24

申请人： Yasuo Kohsaka ,  Tohru Niida ,  Hisao Sato ,  Hajime Kano

发明人： Yasuo Kohsaka ,  Tohru Niida ,  Hisao Sato ,  Hajime Kano

IPC分类号： G01N15/14 ,  G01N15/00 ,  G01N15/06 ,  G01N33/18 ,  G01N21/01 ,  G01N21/85

CPC分类号： G01N15/065 ,  G01N15/06 ,  G01N2015/0053 ,  G01N33/18

摘要： A method and an apparatus for measuring an impurity concentration of a liquid comprises atomizing step for atomizing the objective liquid, e.g. pure water, having a predetermined droplet size distribution, and an evaporating step for evaporating to dryness the droplets so as to generate fine particles. Those particles are fed to a condensation nuclei counter, hereinafter referred to as CNC, which counts the number of fine particles and has a specified sensitivity characteristic curve. Then impurity concentration of the objective liquid can be measured, since the concentration is related to the counted number of the CNC, the distribution of droplet size of the atomizer, and the sensitivity characteristic of the CNC including the particle deposition loss.

摘要翻译： 用于测量液体的杂质浓度的方法和装置包括用于雾化目标液体的雾化步骤，例如， 纯水，具有预定的液滴尺寸分布，以及用于将液滴蒸发干燥以便产生细小颗粒的蒸发步骤。 将这些颗粒进料到冷凝核计数器（以下称为CNC），其计数细颗粒数并具有指定的灵敏度特性曲线。 然后可以测量目标液体的杂质浓度，因为浓度与CNC的计数，雾化器的液滴尺寸的分布以及包括颗粒沉积损失在内的CNC的灵敏度特性有关。