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公开(公告)号：US20060146451A1
公开(公告)日：2006-07-06
申请号：US11367483
申请日：2006-03-06
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
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公开(公告)号：US06868002B2
公开(公告)日：2005-03-15
申请号：US10771537
申请日：2004-02-05
申请人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
发明人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
IPC分类号： G11C11/14 , G11C11/15 , H01F10/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08 , G11C11/00
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/3231 , H01L27/224 , H01L27/228
摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.
摘要翻译： 提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一 插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属 纳米颗粒膜。
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公开(公告)号：US6069820A
公开(公告)日：2000-05-30
申请号：US247300
申请日：1999-02-10
申请人： Koichiro Inomata , Yoshiaki Saito , Tatsuya Kishi
发明人： Koichiro Inomata , Yoshiaki Saito , Tatsuya Kishi
IPC分类号： G01R33/09 , G11B5/012 , G11B5/33 , G11B5/39 , G11C11/16 , H01F10/32 , H01L27/115 , H01L29/66 , H01L43/08 , G11C7/00
CPC分类号： H01L29/66984 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/012 , G11B5/332 , G11B5/3903 , G11C11/16 , H01F10/3254 , H01F10/3268 , H01L27/115 , H01L43/08
摘要： A discrete energy levels are introduced in a ferromagnetic layer of a magnetic device, and tunnel current flows through a plurality of tunnel junctions. The tunnel junctions are disposed between first and second electrodes and the first ferromagnetic layer is interposed between the two tunnel junctions. Variations of the tunnel current depend on the relationship between magnetization directions of the ferromagnetic layer and another ferromagnetic layer. Tunnel current varies between parallel relation and anti-parallel relation.
摘要翻译： 在磁性器件的铁磁层中引入离散的能级，并且隧道电流流过多个隧道结。 隧道结设置在第一和第二电极之间，第一铁磁层介于两个隧道结之间。 隧道电流的变化取决于铁磁层与另一铁磁层的磁化方向之间的关系。 隧道电流在平行关系和反平行关系之间变化。
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公开(公告)号：US06987653B2
公开(公告)日：2006-01-17
申请号：US10797136
申请日：2004-03-11
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
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公开(公告)号：US06556473B2
公开(公告)日：2003-04-29
申请号：US09912321
申请日：2001-07-26
申请人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
发明人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
IPC分类号： G11C1100
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/3231 , H01L27/224 , H01L27/228
摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.
摘要翻译： 提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一 插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属 纳米颗粒膜。
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公开(公告)号：US07593193B2
公开(公告)日：2009-09-22
申请号：US11847496
申请日：2007-08-30
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
摘要翻译： 磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。 作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。 隧道电流在第一铁磁层和第三铁磁层之间流动。
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公开(公告)号：US07038894B2
公开(公告)日：2006-05-02
申请号：US11110869
申请日：2005-04-21
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
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公开(公告)号：US06707711B2
公开(公告)日：2004-03-16
申请号：US10357217
申请日：2003-02-04
申请人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
发明人： Yoshiaki Saito , Koichiro Inomata , Minoru Amano , Kentaro Nakajima , Masayuki Sagoi , Tatsuya Kishi , Shigeki Takahashi
IPC分类号： G11C1100
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/15 , H01F10/3231 , H01L27/224 , H01L27/228
摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.
摘要翻译： 提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一 插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属 纳米颗粒膜。
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公开(公告)号：US06611405B1
公开(公告)日：2003-08-26
申请号：US09662117
申请日：2000-09-14
IPC分类号： G11C1114
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
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公开(公告)号：US07345852B2
公开(公告)日：2008-03-18
申请号：US11367483
申请日：2006-03-06
CPC分类号： H01L27/228 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11C11/15 , G11C11/16 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L27/224 , H01L43/08 , Y10T428/1121 , Y10T428/115
摘要： A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic layer/a second antiferromagnetic layer. The second ferromagnetic layer that is a free layer consists of a Co-based alloy or a three-layered film of a Co-based alloy/a Ni—Fe alloy/a Co-based alloy. A tunnel current is flowed between the first ferromagnetic layer and the third ferromagnetic layer.
摘要翻译： 磁阻元件具有铁磁双隧道结，其具有第一反铁磁层/第一铁磁层/第一介电层/第二铁磁层/第二电介质层/第三铁磁层/第二反铁磁层的堆叠结构。 作为自由层的第二铁磁层由Co基合金或Co系合金/ Ni-Fe合金/ Co系合金的三层膜构成。 隧道电流在第一铁磁层和第三铁磁层之间流动。
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