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    Memory element and memory device
    3.
    发明授权
    Memory element and memory device 失效
    存储器元件和存储器件

    公开(公告)号：US07196386B2

    公开(公告)日：2007-03-27

    申请号：US10530006

    申请日：2003-10-02

    申请人： Koji Kadono ,  Masafumi Ata

    发明人： Koji Kadono ,  Masafumi Ata

    IPC分类号： H01L29/82

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/025 ,  H01L27/222 ,  H01L43/08

    摘要： A memory element wherein a spin conduction layer having a sufficient spin coherence length and a uniform spin field can be obtained, and thereby practical use is attained and a memory device are provided. A spin conduction layer (paramagnetic layer) (24) is a fullerene thin film being from 0.5 nm to 5 μm thick, for example. The fullerene has a hollow sized, for example, from 0.1 nm to 50 nm. A paramagnetic material is included in this hollow. A fermi vector of the fullerene thin film well laps over small number of spin band or plenty of spin band of a ferromagnetic fixed layer (23) and a ferromagnetic free layer (25). Further, spin orientations of the included paramagnetic material are random. Further, electron spin in the fullerene is in a quantized state in a pseudo zero dimensional space. Thereby, a spin coherence length becomes long in the fullerene thin film, and scatteration of spin-polarized conduction electrons goes away.

    摘要翻译： 可以获得具有足够的自旋相干长度和均匀自旋场的自旋导电层的存储元件，从而实现实用性并提供存储器件。 例如，自旋导电层（顺磁性层）（24）是0.5nm〜5μm厚的富勒烯薄膜。 富勒烯具有例如0.1nm至50nm的中空尺寸。 这个空心包含顺磁材料。 富勒烯薄膜阱的费米子向量在铁磁固定层（23）和铁磁自由层（25）的少量自旋带或大量自旋带上交叉。 此外，所包含的顺磁材料的自旋取向是随机的。 此外，富勒烯中的电子自旋在伪零维空间中处于量化状态。 因此，富勒烯薄膜中的自旋相干长度变长，自旋极化导电电子的散射消失。

    Memory element and memory device
    4.
    发明申请
    Memory element and memory device 失效
    存储器元件和存储器件

    公开(公告)号：US20060006334A1

    公开(公告)日：2006-01-12

    申请号：US10530006

    申请日：2003-10-02

    申请人： Koji Kadono ,  Masafumi Ata

    发明人： Koji Kadono ,  Masafumi Ata

    IPC分类号： H01L37/00

    CPC分类号： G11C11/16 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/025 ,  H01L27/222 ,  H01L43/08

    摘要： A memory element wherein a spin conduction layer having a sufficient spin coherence length and a uniform spin field can be obtained, and thereby practical use is attained and a memory device are provided. A spin conduction layer (paramagnetic layer) (24) is a fullerene thin film being from 0.5 nm to 5 μm thick, for example. The fullerene has a hollow sized, for example, from 0.1 nm to 50 nm. A paramagnetic material is included in this hollow. A fermi vector of the fullerene thin film well laps over small number of spin band or plenty of spin band of a ferromagnetic fixed layer (23) and a ferromagnetic free layer (25). Further, spin orientations of the included paramagnetic material are random. Further, electron spin in the fullerene is in a quantized state in a pseudo zero dimensional space. Thereby, a spin coherence length becomes long in the fullerene thin film, and scatteration of spin-polarized conduction electrons goes away.

    摘要翻译： 可以获得具有足够的自旋相干长度和均匀自旋场的自旋导电层的存储元件，从而实现实用性并提供存储器件。 例如，自旋导电层（顺磁性层）（24）是0.5nm〜5μm厚的富勒烯薄膜。 富勒烯具有例如0.1nm至50nm的中空尺寸。 这个空心包含顺磁材料。 富勒烯薄膜阱的费米子向量在铁磁固定层（23）和铁磁自由层（25）的少量自旋带或大量自旋带上交叉。 此外，所包含的顺磁材料的自旋取向是随机的。 此外，富勒烯中的电子自旋在伪零维空间中处于量化状态。 因此，富勒烯薄膜中的自旋相干长度变长，自旋极化导电电子的散射消失。

    Ionic conductor, process for production thereof, and electrochemical device
    6.
    发明授权
    Ionic conductor, process for production thereof, and electrochemical device 有权
    离子导体，其制造方法和电化学装置

    公开(公告)号：US07771891B2

    公开(公告)日：2010-08-10

    申请号：US12340021

    申请日：2008-12-19

    申请人： Koichiro Hinokuma ,  Bjoern Pietzak ,  Constance Gertrud Rost ,  Masafumi Ata ,  Yongming Li ,  Kazuaki Fukushima

    发明人： Koichiro Hinokuma ,  Bjoern Pietzak ,  Constance Gertrud Rost ,  Masafumi Ata ,  Yongming Li ,  Kazuaki Fukushima

    IPC分类号： H01M10/40 ,  H01M8/10 ,  H01M4/58 ,  C08J5/20

    CPC分类号： B82Y30/00 ,  H01B1/122 ,  H01M4/8605 ,  H01M6/18 ,  H01M8/1004 ,  H01M8/1023 ,  H01M8/1039 ,  H01M8/1048 ,  H01M10/0562 ,  H01M10/347 ,  H01M12/00 ,  H01M2300/0068 ,  H01M2300/0082 ,  Y02P70/56

    摘要： Disclosed herein are an ionic conductor including a proton conductor, a process for production thereof, and an electrochemical device (such as fuel cell) with said ionic conductor, said ionic conductor being superior in ionic conductivity, water resistance, and film forming properties. The ionic conductor is formed from a polymer in which carbon clusters having ion dissociating functional groups are bonded to each other through connecting groups. The polymer is less water-soluble and more chemically stable than a derivative composed solely of carbon clusters; therefore, it permits many ion dissociating functional group to be introduced thereinto. Moreover, if ion dissociating functional groups are introduced into also the connecting group, it is possible to prevent the concentration of ion dissociating functional groups from decreasing as the result of polymerization. The polymer can be easily synthesized by simple condensation, substitution, and hydrolysis. Therefore, the process is suitable for mass production in high yields.

    摘要翻译： 本文公开了包括质子导体，其制造方法和具有所述离子导体的电化学装置（例如燃料电池）的离子导体，所述离子导体的离子导电性，耐水性和成膜性优异。 离子导体由具有离子解离官能团的碳簇通过连接基团彼此结合的聚合物形成。 聚合物比仅由碳簇组成的衍生物更少的水溶性和化学稳定性; 因此，允许引入许多离子解离官能团。 此外，如果将离子解离官能团引入连接基团，则可以防止离子解离官能团的浓度因聚合而降低。 聚合物可以通过简单的缩合，取代和水解来容易地合成。 因此，该方法适合大批量生产。

    Magnetic substance
    10.
    发明授权
    Magnetic substance 失效
    磁性物质

    公开(公告)号：US5589038A

    公开(公告)日：1996-12-31

    申请号：US556641

    申请日：1995-11-13

    申请人： Masafumi Ata ,  Masataka Machida ,  Haruo Watanabe

    发明人： Masafumi Ata ,  Masataka Machida ,  Haruo Watanabe

    IPC分类号： H01F1/34 ,  C01B31/02 ,  G11B5/68 ,  H01F1/00 ,  C04B35/00

    CPC分类号： G11B5/68 ,  B82Y25/00 ,  H01F1/0063

    摘要： A light yet highly workable magnetic substance is disclosed which consists mainly of a wholly novel material, fine crystal spherical carbon represented by C.sub.n X.sub.m where n is an integer selected from the group consisting of 60, 70, 76, 84, etc., m represents a positive number not more than n and not zero, and X represents at least one of hydrogen, fluorine, chlorine, bromine and iodine.

    摘要翻译： 公开了一种轻而高度可加工的磁性物质，其主要由全新的材料构成，CnXm表示的细晶粒状碳，其中n为选自60,70,76,84等的整数，m表示 正数不大于n且不为零，X表示氢，氟，氯，溴和碘中的至少一个。