公开(公告)号：US08698523B2

公开(公告)日：2014-04-15

申请号：US13198759

申请日：2011-08-05

申请人： Koji Saotome ,  Yoshinari Tsukada ,  Masatoshi Goto ,  Yusuke Takeuchi

发明人： Koji Saotome ,  Yoshinari Tsukada ,  Masatoshi Goto ,  Yusuke Takeuchi

IPC分类号： H03K3/00

摘要： A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.

公开(公告)号：US20120032709A1

公开(公告)日：2012-02-09

申请号：US13198759

申请日：2011-08-05

申请人： Koji Saotome ,  Yoshinari Tsukada ,  Masatoshi Goto ,  Yusuke Takeuchi

发明人： Koji Saotome ,  Yoshinari Tsukada ,  Masatoshi Goto ,  Yusuke Takeuchi

IPC分类号： H03K3/30

CPC分类号： H03K17/166 ,  H02M1/44 ,  H03K17/04206 ,  H03K17/0424 ,  H03K17/168

摘要： A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.

摘要翻译： 半导体器件驱动单元的关断反馈单元（230FF）根据第一半导体的集电极电流的时间变化产生作为用于在总线中建立电连续性或断开的驱动信号的电压的一部分的反馈电压 当第一半导体器件（11U）断开时，器件（11U）。 当第一半导体器件（11U）接通时，接通反馈单元（23ON）根据流过连接到第二半导体器件（11D）的续流二极管（12D）的换向电流产生反馈电压。

公开(公告)号：US08749278B2

公开(公告)日：2014-06-10

申请号：US13198759

申请日：2011-08-05

申请人： Koji Saotome ,  Yoshinari Tsukada ,  Masatoshi Goto ,  Yusuke Takeuchi

发明人： Koji Saotome ,  Yoshinari Tsukada ,  Masatoshi Goto ,  Yusuke Takeuchi

IPC分类号： H03K3/00

CPC分类号： H03K17/166 ,  H02M1/44 ,  H03K17/04206 ,  H03K17/0424 ,  H03K17/168

摘要： A turn-off feedback unit (23OFF) of a semiconductor device driving unit generates a feedback voltage as part of a voltage of a drive signal for establishing electrical continuity or disconnection in a bus according to a temporal variation of a collector current of a first semiconductor device (11U) when the first semiconductor device (11U) is turned off from on. A turn-on feedback unit (23ON) generates the feedback voltage according to a commutation current flowing through a free wheeling diode (12D) connected to a second semiconductor device (11D) when the first semiconductor device (11U) is turned on from off.

摘要翻译： 半导体器件驱动单元的关断反馈单元（230FF）根据第一半导体的集电极电流的时间变化产生作为用于在总线中建立电连续性或断开的驱动信号的电压的一部分的反馈电压 当第一半导体器件（11U）断开时，器件（11U）。 当第一半导体器件（11U）接通时，接通反馈单元（23ON）根据流过连接到第二半导体器件（11D）的续流二极管（12D）的换向电流产生反馈电压。

公开(公告)号：US08146437B2

公开(公告)日：2012-04-03

申请号：US12630179

申请日：2009-12-03

申请人： Yuichi Miyoshi ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

发明人： Yuichi Miyoshi ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

IPC分类号： G01L9/06

CPC分类号： G01L9/0016 ,  H04R19/005

摘要： A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.

摘要翻译： 用于MEMS器件的隔膜结构包括形成为从衬底的上表面到底表面穿透的通孔; 以及形成在基板的上表面上以覆盖通孔的振动电极膜。 基板的上表面中的通孔的开口形状基本上是六边形。

公开(公告)号：US20100189289A1

公开(公告)日：2010-07-29

申请号：US12305775

申请日：2007-06-27

申请人： Yusuke Takeuchi

发明人： Yusuke Takeuchi

IPC分类号： H04R1/00 ,  H04R31/00

CPC分类号： H04R19/016 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0392 ,  H04R31/00 ,  Y10T29/49005

摘要： An object of the invention is to design microminiaturization and higher sensitivity of a capacitor microphone chip formed by micromachining a silicon substrate and a wafer is diced so that a silicon substrate of a microphone chip is shaped almost like a hexagon, preferably a regular hexagon, and a back air chamber is shaped like a circle or a regular hexagon.

摘要翻译： 本发明的目的是设计通过微加工硅衬底形成的电容器麦克风芯片的微型化和更高的灵敏度，并且切割晶片，使得麦克风芯片的硅衬底被成形为几​​乎像六边形，优选为正六边形，以及 后气室形状为圆形或正六边形。

公开(公告)号：US20100059836A1

公开(公告)日：2010-03-11

申请号：US12436374

申请日：2009-05-06

申请人： Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

发明人： Yuichi Miyoshi ,  Tohru Yamaoka ,  Hidenori Notake ,  Yusuke Takeuchi

IPC分类号： H01L29/84 ,  H01L21/30

CPC分类号： B81C1/00158 ,  B81B2201/0257 ,  B81C2201/0133 ,  G01P15/0802 ,  G01P15/097 ,  G01P15/123

摘要： A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.

摘要翻译： 一种MEMS器件，包括：具有第一主平面和与第一主平面相对的第二主平面的衬底; 形成在基板中的通孔; 以及形成在所述第一主平面上以覆盖所述通孔的振动膜。 第一主平面和第二主平面都是（110）晶面; 并且通孔在第二主平面上具有基本上菱形的形状。

公开(公告)号：US06476750B1

公开(公告)日：2002-11-05

申请号：US09485349

申请日：2000-02-09

申请人： Nobuyasu Kanekawa ,  Yasuyuki Kojima ,  Seigou Yukutake ,  Minehiro Nemoto ,  Kazuhisa Takami ,  Takayuki Iwasaki ,  Yusuke Takeuchi ,  Katsuhiro Furukawa

发明人： Nobuyasu Kanekawa ,  Yasuyuki Kojima ,  Seigou Yukutake ,  Minehiro Nemoto ,  Kazuhisa Takami ,  Takayuki Iwasaki ,  Yusuke Takeuchi ,  Katsuhiro Furukawa

IPC分类号： H03M112

CPC分类号： H03M3/392 ,  H03M3/498

摘要： The hardware of an over-sampling A/D and D/A converter is provided, which hardware is capable of being operated with either kind of software: one corresponding to a first method in which the over-sampling ratio is fixed and the other corresponding to a second method in which the over-sampling ratio is variable. The value N3 written on the pseudo-frequency-dividing-ratio-register 11 and the value N4 written on the pseudo-over-sampling-ratio-register 21 are converted through a user interface into the frequency dividing ratio N1 by the conversion circuit 12 and the converted result is written in the frequency-dividing-ratio-register 10.

摘要翻译： 提供过采样A / D和D / A转换器的硬件，哪个硬件能够使用任何一种软件进行操作：一种对应于过采样率固定的第一种方法，另一种对应 到过采样比是可变的第二种方法。 写入伪分频比寄存器11的值N3和写在伪过采样比寄存器21上的值N4由转换电路12通过用户接口转换成分频比N1 转换后的结果写入分频比寄存器10。

公开(公告)号：US08065919B2

公开(公告)日：2011-11-29

申请号：US12621048

申请日：2009-11-18

申请人： Yusuke Takeuchi

发明人： Yusuke Takeuchi

IPC分类号： G01L9/00 ,  H01L21/00

CPC分类号： G01L9/0042 ,  Y10T29/49005

摘要： A MEMS device includes: a substrate having a through hole; a first film provided on a top surface of the substrate with a bottom surface of the first film exposed in the through hole; a second film provided over the first film with an air gap interposed therebetween, and having a hole grouping including holes each in communication with the air gap; and a supporting layer interposed between the first and second films and having the air gap formed therein. Outermost holes of the hole grouping are located at regular intervals along a shape of an opening of the through hole at an upper open end.

摘要翻译： MEMS器件包括：具有通孔的衬底; 第一膜，其设置在所述基板的顶表面上，所述第一膜的底表面暴露在所述通孔中; 设置在所述第一膜上的第二膜，其间插入气隙，并且具有包括与所述气隙连通的孔的孔组; 以及插入在第一和第二膜之间并且在其中形成气隙的支撑层。 孔分组的最外孔沿着上开口端的通孔的开口的形状规则间隔设置。

公开(公告)号：US20100077863A1

公开(公告)日：2010-04-01

申请号：US12630179

申请日：2009-12-03

申请人： Yuichi MIYOSHI ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

发明人： Yuichi MIYOSHI ,  Yusuke Takeuchi ,  Tohru Yamaoka ,  Hiroshi Ogura

IPC分类号： G01L9/06

CPC分类号： G01L9/0016 ,  H04R19/005

摘要： A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.

摘要翻译： 用于MEMS器件的隔膜结构包括形成为从衬底的上表面到底表面穿透的通孔; 以及形成在基板的上表面上以覆盖通孔的振动电极膜。 基板的上表面中的通孔的开口形状基本上是六边形。

公开(公告)号：US07508117B2

公开(公告)日：2009-03-24

申请号：US11662916

申请日：2005-10-18

申请人： Yusuke Takeuchi

发明人： Yusuke Takeuchi

IPC分类号： H01L41/083

CPC分类号： H04N5/23248 ,  H01L41/0953 ,  H01L41/0966 ,  H04N5/2253 ,  H04N5/23287

摘要： To implement a piezoelectric actuator which can actuate a large object, such as an imaging element, in a predetermined direction at high power without involvement of rotational displacement; which can ensure a large amount of actuation; which is suitable for miniaturization and weight reduction; and which is advantageous in terms of mechanical durability and manufacturing cost.A piezoelectric actuator having a well-balanced mechanical structure is obtained by means of stacking a plurality of cross units, in each of which a pair of bimorph piezoelectric elements (21a and 21b, 21c and 21d) are crossed in the form of the letter X, into two layers (an even number of layers), and fixing the thus-stacked cross units. An imaging element 11 is stably supported by means of two movable ends (C-1, C-2) provided at the extremity of the piezoelectric actuator.

摘要翻译： 实现能够以高功率在预定方向上致动诸如成像元件的大物体而不涉及旋转位移的压电致动器; 这可以确保大量的致动; 适合小型化，减轻重量; 并且在机械耐久性和制造成本方面是有利的。 通过堆叠多个交叉单元获得具有良好平衡的机械结构的压电致动器，其中每个横向单元中的一对双压电晶片压电元件（21a和21b，21c和21d）以字母X的形式交叉 ，分成两层（偶数层），并固定如此堆积的交叉单元。 成像元件11通过设置在压电致动器的末端的两个可动端（C-1，C-2）稳定地支撑。