公开(公告)号：US09005765B2

公开(公告)日：2015-04-14

申请号：US13120600

申请日：2009-09-16

申请人： Koji Wada ,  Jun Hisamoto

发明人： Koji Wada ,  Jun Hisamoto

IPC分类号： B32B15/04 ,  C25D11/08 ,  C25D11/06 ,  C25D11/02

CPC分类号： C25D11/06 ,  C25D11/024

摘要： Provided is an anodic oxide processing method in which the generation of cracks is suppressed in an anodic oxide film formed on an aluminum alloy substrate surface, such as an inner wall of a vacuum chamber of a plasma processing device, and an anodic oxide film having low heat reflectivity and a high withstand voltage is formed with high efficiency. The method for forming an anodic oxide film involves forming the anodic oxide film on the surface of a JIS 6061 aluminum alloy substrate in a sulfuric acid solution or a mixed acid solution of sulfuric acid and oxalic acid.

摘要翻译： 提供了一种阳极氧化处理方法，其中在诸如等离子体处理装置的真空室的内壁的铝合金基板表面上形成的阳极氧化膜和具有低等离子体处理装置的阳极氧化膜中抑制了裂纹的产生 以高效率形成热反射率和高耐受电压。 形成阳极氧化膜的方法包括在硫酸溶液或硫酸和草酸的混合酸溶液中在JIS 6061铝合金基材的表面上形成阳极氧化膜。

公开(公告)号：US06686053B2

公开(公告)日：2004-02-03

申请号：US10196198

申请日：2002-07-17

申请人： Koji Wada ,  Jun Hisamoto

发明人： Koji Wada ,  Jun Hisamoto

IPC分类号： B32B1504

CPC分类号： C25D11/06 ,  C22C21/02 ,  C22C21/08 ,  C25D11/18 ,  Y10T428/12479

摘要： An Al alloy member having excellent corrosion resistance comprises an Al or Al alloy substrate having an anodic oxide film including a porous layer and a pore-free barrier layer. At least a part of a structure of the barrier layer is altered into boehmite and/or pseudo-boehmite, a dissolution rate of the film is at 100 mg/dm2/15 minutes or below when determined by an immersion test in phosphoric acid/chromic acid (JIS H 8683-2), and a corroded area percent is at 10% or below after allowing the film to stand in an atmosphere of 5% Cl2—Ar gas at 400° C. for 4 hours.

摘要翻译： 具有优异耐腐蚀性的Al合金构件包括具有包括多孔层和无孔阻隔层的阳极氧化膜的Al或Al合金基底。 阻挡层的结构的至少一部分被改变为勃姆石和/或假勃姆石，当通过磷酸浸渍试验测定时，膜的溶解速率为100mg / dm 2/15分钟或更低 酸/铬酸（JIS H 8683-2），腐蚀面积百分数在使膜在5％Cl 2 -Ar气氛中在400℃下放置4小时后为10％以下。

公开(公告)号：US06521046B2

公开(公告)日：2003-02-18

申请号：US09773638

申请日：2001-02-02

申请人： Toshiyuki Tanaka ,  Koji Wada ,  Jun Hisamoto ,  Hiroki Sawada ,  Hiroshi Matsuura

发明人： Toshiyuki Tanaka ,  Koji Wada ,  Jun Hisamoto ,  Hiroki Sawada ,  Hiroshi Matsuura

IPC分类号： C23C1600

CPC分类号： H01J37/32467

摘要： A chamber material made of Al alloy excellent in thermal cracking resistance and chemical and/or physical corrosion resistance and capable of reducing contamination excellently and further having excellent and wide applicable brazing property in a high temperature corrosive circumstance, in which the substrate aluminum material for the chamber material made of Al alloy having an anodized film comprises 0.1 to 2.0% Si, 0.1 to 3.5% Mg, 0.02 to 4.0% Cu on the mass% basis and the balance of Al and impurity element with Cr in the impurity elements being less than 0.04%. Preferably, Fe is 0.1% or less and Mn is 0.04% or less in the impurity element and, further, the total sum of impurity elements other than Cr and Mn being restricted to 0.1% or less. This invention can be utilized suitably to various materials used in high temperature corrosive circumstance, particularly, in high temperature corrosive gas or plasma atmosphere.

摘要翻译： 由耐热龟裂性，耐化学腐蚀性和/或物理耐腐蚀性优异并且能够在高温腐蚀环境中具有优异且广泛适用的钎焊性能的，能够优异地降低污染的Al合金制的腔室材料，其中用于 具有阳极氧化膜的Al合金制成的室内材料以质量％计含有0.1〜2.0％的Si，0.1〜3.5％的Mg，0.02〜4.0％的Cu，余量的Al和杂质元素的杂质元素的Cr少于 0.04％。 优选的是，在杂质元素中，Fe为0.1％以下，Mn为0.04％以下，Cr，Mn以外的杂质元素的总和为0.1％以下。 本发明可以适用于高温腐蚀性环境中使用的各种材料，特别是在高温腐蚀性气体或等离子体气氛中。

公开(公告)号：US09187840B2

公开(公告)日：2015-11-17

申请号：US13581086

申请日：2011-02-23

申请人： Koji Wada ,  Mamoru Hosokawa ,  Takayuki Tsubota ,  Jun Hisamoto

发明人： Koji Wada ,  Mamoru Hosokawa ,  Takayuki Tsubota ,  Jun Hisamoto

IPC分类号： C25D11/04 ,  C25D11/18 ,  C25D11/02 ,  C25D11/08 ,  C25D11/16 ,  C25D11/24 ,  C25D21/12

CPC分类号： C25D11/04 ,  C25D11/024 ,  C25D11/08 ,  C25D11/16 ,  C25D11/18 ,  C25D11/246 ,  C25D21/12

摘要： The present invention provides a method for forming an anode oxide film, in which on the assumption that a direct-current power source is used, a thick anode oxide film can be formed with good productivity within a short time without using special equipment. The method includes allowing a current A0 to pass through an aluminum base material, and includes a step of repeating a first electricity cut-off treatment multiple times, in which when a voltage reaches a voltage V1 during the formation of the film, the passage of electricity is once cut off, this electricity cut-off is continued for a period equal to or longer than an electricity cut-off time T1, and the passage of electricity is then resumed, wherein the voltage V1 and electricity cut-off time T1 satisfy the prescribed expressions.

摘要翻译： 本发明提供了一种形成阳极氧化膜的方法，其中假设使用直流电源时，可以在短时间内以高生产率形成厚阳极氧化膜而不使用特殊设备。 该方法包括使电流A0通过铝基材料，并且包括多次重复第一次断电处理的步骤，其中当膜形成期间电压达到电压V1时，通过 电一旦被切断，该断电持续时间等于或长于断电时间T1，然后恢复通电，其中电压V1和断电时间T1满足 规定的表达。

公开(公告)号：US20100206738A1

公开(公告)日：2010-08-19

申请号：US12647760

申请日：2009-12-28

申请人： Koji WADA ,  Takayuki Tsubota ,  Mamoru Hosokawa ,  Jun Hisamoto

发明人： Koji WADA ,  Takayuki Tsubota ,  Mamoru Hosokawa ,  Jun Hisamoto

IPC分类号： C25D5/50

CPC分类号： C25D11/24 ,  H01L29/4908

摘要： A method of manufacturing a surface treated member used for semiconductor liquid crystal manufacturing apparatus, capable of forming an anodized film at a higher hardness than that of an anodizing film formed of an existent method, with no problem in view of the generation of cracks, and excellent in the balance between a high hardness and reduced cracks by a simple and convenient method by forming an anodized film to the surface of a member having an aluminum alloy or pure aluminum as a basic material, then dipping the same in pure water, and applying a hydrating treatment to the anodized film, wherein the hydrating treatment is conducted under the conditions satisfying that a treatment temperature is 80° C. to 100° C. and a treatment time (min)≧−1.5×treatment temperature (° C.)+270.

摘要翻译： 制造用于半导体液晶制造装置的表面处理构件的方法，其能够形成比由现有方法形成的阳极氧化膜的硬度更高的硬度的阳极氧化膜，从而产生裂纹没有问题， 通过在具有铝合金或纯铝作为基础材料的部件的表面上形成阳极氧化膜，然后将其浸渍在纯水中，通过简单方便的方法在高硬度和减少的裂纹之间的平衡优异，然后将其浸入纯水中 对阳极氧化膜进行水合处理，其中在满足处理温度为80℃至100℃，处理时间（min）≥-1.5×处理温度（℃）的条件下进行水合处理。 +270。

公开(公告)号：US20110174627A1

公开(公告)日：2011-07-21

申请号：US13120600

申请日：2009-09-16

申请人： Koji Wada ,  Jun Hisamoto

发明人： Koji Wada ,  Jun Hisamoto

IPC分类号： B32B15/04 ,  C25D11/08

CPC分类号： C25D11/06 ,  C25D11/024

摘要： Provided is an anodic oxide processing method in which the generation of cracks is suppressed in an anodic oxide film formed on an aluminum alloy substrate surface, such as an inner wall of a vacuum chamber of a plasma processing device, and an anodic oxide film having low heat reflectivity and a high withstand voltage is formed with high efficiency. The method for forming an anodic oxide film involves forming the anodic oxide film on the surface of a JIS 6061 aluminum alloy substrate in a sulfuric acid solution or a mixed acid solution of sulfuric acid and oxalic acid. The total voltage in the direction of the film thickness is at least 1650 V·μm for the entire film thickness of the anodic oxide film formed. In the method for forming an anodic oxide film in which the anodic oxide film from the boundary surface of the aluminum alloy substrate with the anodic oxide film to the surface of the anodic oxide film and the 25 μm position in the film thickness direction is formed at no more than the electrolysis voltage of 27 V, and the total voltage from the boundary surface to the 25 μm position in the film thickness direction is at least 820 V·μm and no more than 1000 V·μm, an anodic oxide film having a high withstand voltage can be formed to satisfy the heat reflectivity, crack density, processing time, and the desired standards.

摘要翻译： 提供了一种阳极氧化处理方法，其中在诸如等离子体处理装置的真空室的内壁的铝合金基板表面上形成的阳极氧化膜和具有低等离子体处理装置的阳极氧化膜中抑制了裂纹的产生 以高效率形成热反射率和高耐受电压。 形成阳极氧化膜的方法包括在硫酸溶液或硫酸和草酸的混合酸溶液中在JIS 6061铝合金基材的表面上形成阳极氧化膜。 对于形成的阳极氧化膜的整个膜厚，膜厚方向的总电压至少为1650V·μm。 在形成阳极氧化膜的方法中，其中阳极氧化膜从具有阳极氧化膜的铝合金基板的边界面到阳极氧化膜的表面和膜厚度方向上的25μm位置形成在 不超过27V的电解电压，并且在膜厚方向上从边界面到25μm位置的总电压为至少820V·μm且不大于1000V·μm，阳极氧化膜具有 可以形成高耐压以满足热反射率，裂纹密度，加工时间和期望的标准。

公开(公告)号：US20100018617A1

公开(公告)日：2010-01-28

申请号：US12374798

申请日：2007-07-10

申请人： Koji Wada ,  Jun Hisamoto ,  Toshiyuki Tanaka ,  Kozo Hoshino ,  Kazunori Kobayashi

发明人： Koji Wada ,  Jun Hisamoto ,  Toshiyuki Tanaka ,  Kozo Hoshino ,  Kazunori Kobayashi

IPC分类号： C22F1/04 ,  C22C21/02 ,  C22C21/08 ,  C22F1/043 ,  C22F1/047 ,  C23C16/40

CPC分类号： C25D11/04 ,  C22C21/00 ,  C22C21/02 ,  C22C21/08 ,  C22F1/043 ,  C22F1/047

摘要： The aluminum alloy for anodic oxidation treatment directed to the present invention comprises as alloy elements 0.1 to 2.0% Mg, 0.1 to 2.0% Si, and 0.1 to 2.0% Mn, wherein each content of Fe, Cr, and Cu is limited to 0.03 mass % or less, and wherein the remainder is composed of Al and inevitable impurities. An aluminum alloy more excellent in the durability can be obtained by subjecting the aluminum alloy ingot having the above element composition to a homogenization treatment at a temperature of more than 550° C. to 600° C. or less. An aluminum alloy member can be obtained by forming an anodic oxidation coating on the surface of the aluminum alloy.

摘要翻译： 用于本发明的用于阳极氧化处理的铝合金包括作为合金元素的合金元素为0.1-2.0％的Mg，0.1-2.0％的Si和0.1到2.0％的Mn，其中Fe，Cr和Cu的每个含量被限制在0.03质量 ％以下，其余为Al和不可避免的杂质。 通过将具有上述元素组成的铝合金锭在550℃〜600℃以下的温度下进行均质化处理，可以获得耐久性更优异的铝合金。 通过在铝合金表面上形成阳极氧化涂层可以获得铝合金构件。

公开(公告)号：US20090233113A1

公开(公告)日：2009-09-17

申请号：US12090552

申请日：2006-11-13

申请人： Jun Hisamoto ,  Koji Wada ,  Takayuki Tsubota

发明人： Jun Hisamoto ,  Koji Wada ,  Takayuki Tsubota

IPC分类号： B32B15/04

CPC分类号： C25D11/08

摘要： To provide an aluminum alloy or aluminum member having an anodic oxide coating formed thereon, the coating having excellent resistance to gaseous corrosion and resistance to plasma and excellent adhesion, and a member for a vacuum apparatus formed of such an aluminum alloy or aluminum member having excellent corrosion resistance. Moreover, a member having a sufficient voltage resistance is provided to stably keep a plasma state in a process using plasma.The object is substantialized by providing the following: (1) An aluminum alloy or aluminum member, wherein the anodic oxide coating has impedance of at least 107Ω at a frequency of 10−2 Hz, and hardness of at least 400 in Vickers hardness (Hv); or (2) An aluminum alloy or aluminum member, wherein the anodic oxide coating has impedance of at least 108Ω at a frequency of 10−2 Hz, and hardness of at least 350 in Vickers hardness (Hv).

摘要翻译： 为了提供其上形成有阳极氧化物涂层的铝合金或铝构件，该涂层具有优异的耐气体腐蚀性和耐等离子体性以及优异的粘合性，以及由这种铝合金或铝构件形成的真空装置的构件 耐腐蚀性能。 此外，提供具有足够的耐电压性的部件以在使用等离子体的工艺中稳定地保持等离子体状态。 该目的通过提供以下方式实现：（1）一种铝合金或铝构件，其中阳极氧化物涂层的阻抗在10-2Hz的频率下至少为107Ohm，维氏硬度（Hv）的硬度至少为400 ）; 或（2）铝合金或铝构件，其中所述阳极氧化物涂层在10-2Hz的频率下具有至少108Ohm的阻抗，并且维氏硬度（Hv）的硬度至少为350。

公开(公告)号：US6027629A

公开(公告)日：2000-02-22

申请号：US836469

申请日：1997-05-16

申请人： Jun Hisamoto ,  Koji Wada ,  Koki Ikeda ,  Masahiro Yanagawa

发明人： Jun Hisamoto ,  Koji Wada ,  Koki Ikeda ,  Masahiro Yanagawa

IPC分类号： B01J3/00 ,  B01J19/02 ,  C23C16/44 ,  C25D11/04 ,  C25D11/12

CPC分类号： C23C16/4404 ,  B01J19/02 ,  B01J3/006 ,  C25D11/045 ,  C25D11/12 ,  B01J2219/024 ,  Y10T428/249953 ,  Y10T428/249954 ,  Y10T428/249956

摘要： The present invention relates to a vacuum chamber and chamber parts made of aluminum or its alloys which exhibit excellent corrosion resistance to a corrosive gas or plasma introduced into the vacuum chamber, the surface treatment, and material for the vacuum chamber. The vacuum chamber has a porous layer with a structure in which a pore diameter at the top thereof is small, while a pore diameter at the bottom thereof is large. In order to give such a structure to the porous layer, a final anodizing voltage is set to be higher than an initial anodizing voltage when the surface of the base material is anodized. After the porous-type anodizing is completed, non-porous type anodizing may be conducted so as to grow a barrier layer. Furthermore, the base material made of aluminum alloy preferably has particles such as precipitates and/or deposits with a diameter of 10 .mu.m or less in average, and the precipitates and/or deposits are arranged in parallel with a largest surface of the base material.

摘要翻译： PCT No.PCT / JP95 / 02263 Sec。 371日期：1997年5月16日 102（e）日期1997年5月16日PCT提交1995年11月6日PCT公布。 公开号WO96 / 15295 日期1996年5月23日本发明涉及一种由铝或其合金制成的真空室和室部件，其对被引入真空室的腐蚀性气体或等离子体，表面处理和真空室的材料表现出优异的耐腐蚀性。 真空室具有其顶部的孔径小的多孔层，底部的孔径大。 为了将这种结构赋予多孔层，当阳极氧化基底材料的表面时，最终的阳极氧化电压被设定为高于初始阳极氧化电压。 在多孔型阳极氧化完成之后，可以进行无孔型阳极氧化以便生长阻挡层。 此外，由铝合金制成的基材优选具有平均直径为10μm以下的析出物和/或沉积物的粒子，并且析出物和/或沉积物与基材的最大表面平行地排列 。

公开(公告)号：US07005194B2

公开(公告)日：2006-02-28

申请号：US10761205

申请日：2004-01-22

申请人： Koji Wada ,  Jun Hisamoto

发明人： Koji Wada ,  Jun Hisamoto

IPC分类号： B32B3/26

CPC分类号： C25D11/04 ,  Y10T428/12667 ,  Y10T428/12736 ,  Y10T428/249953

摘要： An aluminum or aluminum alloy member superior in liquid and gaseous corrosion resistance and plasma resistance, which has an anodized film formed thereon which is composed of a porous layer and a non-porous barrier layer whose structure is at least partly boehmite or pseudo-boehmite. Said anodized film is characterized by that the film dissolving rate measured by the test for immersion in a mixture of phosphoric acid and chromic acid (conforming to JIS H8683-2) is less than 120 mg/dm2/15 min, the ratio of area in which corrosion occurs after standing for 2 hours in an atmosphere of argon containing 5% chlorine (at 300° C.) is less than 15%, and the hardness (Hv) of the film is no lower than 420.

摘要翻译： 具有优异的液体和气体耐腐蚀性和等离子体电阻的铝或铝合金构件，其具有形成在其上的阳极化膜，其由结构至少部分勃姆石或假勃姆石的多孔层和无孔阻挡层组成。 所述阳极氧化膜的特征在于，通过浸渍在磷酸和铬酸的混合物中测试的膜溶解速率（符合JIS H8683-2）小于120mg / dm 2 / 15分钟，在含有5％氯（300℃）的氩气气氛中放置2小时后发生腐蚀的面积比例小于15％，膜的硬度（Hv）不低于 超过420。