公开(公告)号：US5686364A

公开(公告)日：1997-11-11

申请号：US530601

申请日：1995-09-19

申请人： Konomu Ohki ,  Akio Kanai ,  Shinji Tanaka

发明人： Konomu Ohki ,  Akio Kanai ,  Shinji Tanaka

IPC分类号： H01L21/762 ,  H01L21/02 ,  H01L21/76 ,  H01L21/84 ,  H01L27/12 ,  H01L21/00

CPC分类号： H01L21/84 ,  Y10S438/938

摘要： A method for producing for a SOI type bonded substrate for semiconductor integrated circuits which has a void areal ratio which approaches or is equal to zero %, when heat treated at temperatures on the order of 1250.degree. C. The method involves: superimposing a Si single crystal wafer having a main surface of which is covered by a Si polycrystal layer, beneath which Si single crystal islands are formed on the main surface and are isolated from each other by V grooves with interposition of a dielectric film, which V grooves are filled up by the Si polycrystal layer, and a support made from Si material between the Si polycrystal layer and a surface of the support with a dielectrically insulating layer sandwiched therebetween; and conducting heat treatment of the superimposed Si single crystal wafer and the support to effect bonding therebetween. According to the method any P-V value of recesses between the Si single crystal islands and the V grooves which are formed on the bonding surface of the Si polycrystal layer are set at 13 nm/250.times.250 .mu.m.sup.2 or less; and the heat treatment is conducted at a temperature in the range of 1100.degree. C. to 1250.degree. C.

摘要翻译： 一种用于半导体集成电路的SOI型键合衬底的制造方法，该半导体集成电路在1250℃的温度下进行热处理时，其空隙面积比接近或等于零％。该方法包括：将Si单 其主表面由Si多晶层覆盖的晶体晶片，在主表面上形成Si单晶岛，并通过插入电介质膜的V沟槽彼此隔离，将V沟槽填满 通过Si多晶层和由Si材料制成的支撑体在Si多晶层和支撑体的表面之间夹着介电绝缘层; 并且对叠加的Si单晶晶片和支撑体进行热处理以实现它们之间的结合。 根据该方法，在Si多晶层的接合表面上形成的Si单晶岛和V槽之间的凹陷的任何P-V值设定为13nm / 250×250μm2m2以下; 并且在1100℃至1250℃的温度下进行热处理。

公开(公告)号：US5240883A

公开(公告)日：1993-08-31

申请号：US841166

申请日：1992-02-25

申请人： Takao Abe ,  Masatake Katayama ,  Akio Kanai ,  Konomu Ohki ,  Masatake Nakano

发明人： Takao Abe ,  Masatake Katayama ,  Akio Kanai ,  Konomu Ohki ,  Masatake Nakano

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/304 ,  H01L21/3063 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/2007 ,  H01L21/3063 ,  H01L21/76251 ,  Y10S148/127 ,  Y10S148/135 ,  Y10S438/924

摘要： A thin Silicon film On Insulator (SOI) material fabricating method which is capable of providing a very high thickness uniformity of the silicon film, a process simplification and a considerable reduction of processing cost is disclosed, in which a silicon oxide film is formed on one or both of a p-type silicon bond wafer and a silicon base wafer, then the two wafers are bonded together through the silicon oxide film, subsequently a fixed positive charge is induced in the silicon oxide film to form a n-type inversion layer in the p-type silicon bond wafer adjacent to an interface between the p-type silicon bond wafer and the silicon oxide film layer, and thereafter a chemical etching is effected while applying a positive voltage to the p-type silicon bond wafer so that an etch-stop is made at an interface between a depletion layer including the n-type inversion layer and the p-type layer.

公开(公告)号：US5183783A

公开(公告)日：1993-02-02

申请号：US811958

申请日：1991-12-23

申请人： Yutaka Ohta ,  Konomu Ohki ,  Masatake Katayama

发明人： Yutaka Ohta ,  Konomu Ohki ,  Masatake Katayama

IPC分类号： H01L21/762

CPC分类号： H01L21/76297 ,  Y10S438/928 ,  Y10S438/977

摘要： Single crystal silicon islands in a dielectric-separation substrate are separated completely and finished in a uniform thickness by preparatorily denuding a single crystal silicon substrate of a warpage suffered to occur therein.This dielectric-separation substrate is produced by a method which comprises forming a thermal oxide film on a single crystal silicon substrate having grooves incised in advance therein, then forming an irreversibly thermally shrinkable film on the rear surface of said single crystal silicon substrate prior to depositing a polycrystalline silicon thereon, then depositing a polycrystalline silicon on said single crystal silicon substrate, and thereafter grinding said single crystal silicon substrate in conjunction with said irreversibly thermally shrinkable film.

公开(公告)号：US5336634A

公开(公告)日：1994-08-09

申请号：US25256

申请日：1993-03-02

申请人： Masatake Katayama ,  Makoto Sato ,  Yutaka Ohta ,  Mitsuru Sugita ,  Konomu Ohki

发明人： Masatake Katayama ,  Makoto Sato ,  Yutaka Ohta ,  Mitsuru Sugita ,  Konomu Ohki

IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/762 ,  H01L21/763 ,  H01L21/76

CPC分类号： H01L21/30608 ,  H01L21/3083 ,  H01L21/76264 ,  H01L21/763 ,  H01L21/76275 ,  H01L21/76286 ,  Y10S148/012 ,  Y10S148/05

摘要： A dielectrically isolated substrate is comprised of a single-crystal silicon substrate or bond substrate and a single-crystal silicon substrate or base substrate bonded together into a composite structure. The bond substrate has a (110) plane as a main crystal plane and is provided with vertically walled moats and substantially squared islands positioned adjacent to the moats. The moats and islands result from anisotropic etching using a specific mask pattern. Also disclosed is a process for producing the composite structure.

摘要翻译： 介电隔离的衬底由单晶硅衬底或接合衬底和结合在一起的复合结构中的单晶硅衬底或基底衬底构成。 接合衬底具有（110）面作为主晶面并且设置有垂直壁壁的护城河和邻近护城河定位的基本上平方的岛。 使用特定掩模图案的各向异性蚀刻产生护城河和岛屿。 还公开了一种复合结构的制造方法。

公开(公告)号：US5124274A

公开(公告)日：1992-06-23

申请号：US791518

申请日：1991-11-14

申请人： Konomu Ohki ,  Yutaka Ohta ,  Masatake Katayama

发明人： Konomu Ohki ,  Yutaka Ohta ,  Masatake Katayama

IPC分类号： H01L21/3213 ,  H01L21/76 ,  H01L21/762 ,  H01L21/763

CPC分类号： H01L21/32136 ,  H01L21/76264 ,  H01L21/76297 ,  H01L21/763 ,  H01L21/76275 ,  H01L21/76286

摘要： After the separating grooves has been formed, the polycrystalline silicon deposited as bonded to the single crystal substrate as a supporting base, and the polycrystalline silicon layer ground and polished until the oxide film in the area other than the separating grooves is exposed, the present invention etches the polycrystalline silicon layer on the separating grooves with mixed acid composed of hydrofluoric acid and nitric acid until its thickness equals that of the separating oxide film and subsequently removes the oxide film in the area other than the separating grooves with hydrofluoric acid, As a result, the otherwise inevitable occurrence of projections of polycrystalline silicon can be precluded. When the dielectric-separation substrate obtained by the present invention is used in manufacturing a semiconductor device, therefore, the occurrence of particles due to the chipping of the projections of polycrystalline silicon and the breakage of distributed wires in the produced device can be prevented.