公开(公告)号：US20120193628A1

公开(公告)日：2012-08-02

申请号：US13353608

申请日：2012-01-19

申请人： Toshinari SASAKI ,  Kosei NODA ,  Yuta ENDO

发明人： Toshinari SASAKI ,  Kosei NODA ,  Yuta ENDO

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used. A p-type oxide semiconductor material is contained in an n-type oxide semiconductor film, whereby carriers which are generated in the oxide semiconductor film without intention can be reduced. This is because electrons generated in the n-type oxide semiconductor film without intention are recombined with holes generated in the p-type oxide semiconductor material to disappear. Accordingly, it is possible to reduce carriers which are generated in the oxide semiconductor film without intention.

摘要翻译： 通过对使用氧化物半导体膜的晶体管赋予稳定的电特性来制造高可靠性的半导体器件。 p型氧化物半导体材料包含在n型氧化物半导体膜中，由此可以减少在氧化物半导体膜中产生的载流子。 这是因为在n型氧化物半导体膜中产生的电子没有意图与在p型氧化物半导体材料中产生的空穴重新组合而消失。 因此，可以无意地减少在氧化物半导体膜中产生的载流子。

公开(公告)号：US20110284847A1

公开(公告)日：2011-11-24

申请号：US13110245

申请日：2011-05-18

申请人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

发明人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78606

摘要： Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide semiconductor layer has capacitance of lower than or equal to 1.5×10−10 F/m2. For example, in the case of a top-gate transistor, a base insulating layer has capacitance of lower than or equal to 1.5×10−10 F/m2, whereby the adverse effect of an interface state between the substrate and the base insulating layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.

摘要翻译： 公开了具有使用氧化物半导体的晶体管的半导体器件。 氧化物半导体层的背面通道侧的绝缘层的电容为小于或等于1.5×10 -10 F / m 2。 例如，在顶栅晶体管的情况下，基极绝缘层具有小于或等于1.5×10 -10 F / m 2的电容，由此衬底和基底绝缘层之间的界面态的不利影响 可以减少 因此，可以制造电特性波动小，可靠性高的半导体装置。

公开(公告)号：US20120112183A1

公开(公告)日：2012-05-10

申请号：US13282529

申请日：2011-10-27

申请人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

发明人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02664 ,  H01L21/441 ,  H01L21/465 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

摘要： An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.

摘要翻译： 本发明的目的是提供一种包括控制载流子密度的氧氮化物半导体的半导体器件。 通过将控制氮引入到氧化物半导体层中，可以制造其中具有期望的载流子密度和特性的氧氮化物半导体用于沟道的晶体管。 此外，通过使用氧氮化物半导体，即使在氮氧化物半导体层和源电极之间以及氧氮化物半导体层和漏电极之间没有设置低电阻层等的情况下，也可以表现出良好的接触特性。

公开(公告)号：US20110284854A1

公开(公告)日：2011-11-24

申请号：US13109594

申请日：2011-05-17

申请人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

发明人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

摘要翻译： 在具有栅极结构的晶体管中，栅电极层与形成沟道区的氧化物半导体层重叠，栅极绝缘层介于其间，当绝缘层中含有大量的氢时，氢扩散 由于绝缘层与氧化物半导体层接触，所以进入氧化物半导体层; 因此，晶体管的电特性降低。 本发明的目的是提供一种具有良好电特性的半导体器件。 与形成沟道区域的氧化物半导体层接触的绝缘层使用其氢浓度小于6×1020原子/ cm3的绝缘层。 使用绝缘层，可以防止氢的扩散，并且可以提供具有良好电特性的半导体器件。

公开(公告)号：US20110284846A1

公开(公告)日：2011-11-24

申请号：US13110241

申请日：2011-05-18

申请人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

发明人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L29/12

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606

摘要： Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

摘要翻译： 氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造可靠性高，电特性变化小的半导体装置。

公开(公告)号：US20120049189A1

公开(公告)日：2012-03-01

申请号：US13188992

申请日：2011-07-22

申请人： Toshinari SASAKI ,  Hitomi SATO ,  Kosei NODA ,  Yuta ENDO ,  Mizuho IKARASHI ,  Keitaro IMAI ,  Atsuo ISOBE ,  Yutaka OKAZAKI

发明人： Toshinari SASAKI ,  Hitomi SATO ,  Kosei NODA ,  Yuta ENDO ,  Mizuho IKARASHI ,  Keitaro IMAI ,  Atsuo ISOBE ,  Yutaka OKAZAKI

IPC分类号： H01L29/12 ,  H01L21/36

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.

摘要翻译： 本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。 首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序 在不暴露于空气的情况下执行层。 接下来，在形成氧化物半导体层之后，进行第二热处理。 使用通过加热而释放氧的绝缘层作为基底绝缘层。

公开(公告)号：US20120032172A1

公开(公告)日：2012-02-09

申请号：US13193755

申请日：2011-07-29

申请人： Kosei NODA ,  Yuta ENDO ,  Toshinari SASAKI

发明人： Kosei NODA ,  Yuta ENDO ,  Toshinari SASAKI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/41733

摘要： A semiconductor device including the following components and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a substrate; an oxide semiconductor layer over the substrate; a source electrode and a drain electrode whose end portion has a taper angle and whose upper end portion has a curved surface, the source electrode and the drain electrode being electrically connected to the oxide semiconductor layer; a gate insulating layer being in contact with a part of the oxide semiconductor layer and covering the oxide semiconductor layer, the source electrode, and the drain electrode; and a gate electrode overlapping with the oxide semiconductor layer and being over the gate insulating layer.

摘要翻译： 提供了包括以下部件的半导体器件和半导体器件的制造方法。 半导体器件包括衬底; 衬底上的氧化物半导体层; 源极电极和漏电极，其端部具有锥角并且其上端部具有弯曲表面，所述源电极和漏电极电连接到所述氧化物半导体层; 栅绝缘层与所述氧化物半导体层的一部分接触并覆盖所述氧化物半导体层，所述源电极和所述漏电极; 以及与氧化物半导体层重叠并在栅极绝缘层上方的栅电极。

公开(公告)号：US20110284845A1

公开(公告)日：2011-11-24

申请号：US13110240

申请日：2011-05-18

申请人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

发明人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L29/12

CPC分类号： H01L21/02554 ,  H01L21/02488 ,  H01L21/02664 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

摘要： An insulating layer containing a silicon peroxide radical is used as an insulating layer in contact with an oxide semiconductor layer for forming a channel. Oxygen is released from the insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the insulating layer and the oxide semiconductor layer can be reduced. Accordingly, a semiconductor device where reliability is high and variation in electric characteristics is small can be manufactured.

摘要翻译： 使用含有硅氧化物自由基的绝缘层作为与用于形成沟道的氧化物半导体层接触的绝缘层。 氧从绝缘层释放，由此可以减少氧化物半导体层中的氧缺乏和绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造可靠性高，电特性变化小的半导体装置。

公开(公告)号：US20110284844A1

公开(公告)日：2011-11-24

申请号：US13110236

申请日：2011-05-18

申请人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

发明人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78606 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869

摘要： An object of the present invention is to manufacture a semiconductor device where fluctuation in electrical characteristics is small and reliability is high in a transistor in which an oxide semiconductor is used. An insulating layer from which oxygen is released by heating is used as a base insulating layer of an oxide semiconductor layer which forms a channel. Oxygen is released from the base insulating layer, whereby oxygen deficiency in the oxide semiconductor layer and an interface state between the base insulating layer and the oxide semiconductor layer can be reduced. Thus, a semiconductor device where fluctuation in electrical characteristics is small and reliability is high can be manufactured.

摘要翻译： 本发明的目的是制造其中使用氧化物半导体的晶体管的电特性波动小并且可靠性高的半导体器件。 使用通过加热而释放氧的绝缘层作为形成沟道的氧化物半导体层的基极绝缘层。 氧从基底绝缘层释放出来，由此可以减少氧化物半导体层的缺氧和基底绝缘层与氧化物半导体层之间的界面状态。 因此，可以制造电特性波动小，可靠性高的半导体装置。

公开(公告)号：US20120119212A1

公开(公告)日：2012-05-17

申请号：US13289436

申请日：2011-11-04

申请人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

发明人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66969 ,  H01L21/02 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L21/425 ,  H01L21/477 ,  H01L29/42384 ,  H01L29/518 ,  H01L29/78618 ,  H01L29/7869

摘要： A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric characteristics due to a short-channel effect is less likely to be caused. The semiconductor device includes an oxide semiconductor film having a pair of oxynitride semiconductor regions including nitrogen and an oxide semiconductor region sandwiched between the pair of oxynitride semiconductor regions, a gate insulating film, and a gate electrode provided over the oxide semiconductor region with the gate insulating film positioned therebetween. Here, the pair of oxynitride semiconductor regions serves as a source region and a drain region of the transistor, and the oxide semiconductor region serves as the channel region of the transistor.

摘要翻译： 使用其中氧化物半导体包括在沟道区域中的晶体管制造半导体器件，并且不太可能引起由于短沟道效应引起的电特性的变化。 半导体器件包括具有一对氧氮化物半导体区域的氧化物半导体膜，该氧氮化物半导体区域包括氮和夹在一对氧氮化物半导体区域之间的氧化物半导体区域，栅极绝缘膜和设置在氧化物半导体区域上的栅电极，栅极绝缘 胶片位于其间。 这里，一对氧氮化物半导体区域用作晶体管的源极区域和漏极区域，氧化物半导体区域用作晶体管的沟道区域。