公开(公告)号：US20110284854A1

公开(公告)日：2011-11-24

申请号：US13109594

申请日：2011-05-17

申请人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

发明人： Yuta ENDO ,  Toshinari SASAKI ,  Kosei NODA ,  Mizuho SATO ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.

摘要翻译： 在具有栅极结构的晶体管中，栅电极层与形成沟道区的氧化物半导体层重叠，栅极绝缘层介于其间，当绝缘层中含有大量的氢时，氢扩散 由于绝缘层与氧化物半导体层接触，所以进入氧化物半导体层; 因此，晶体管的电特性降低。 本发明的目的是提供一种具有良好电特性的半导体器件。 与形成沟道区域的氧化物半导体层接触的绝缘层使用其氢浓度小于6×1020原子/ cm3的绝缘层。 使用绝缘层，可以防止氢的扩散，并且可以提供具有良好电特性的半导体器件。

公开(公告)号：US20110284959A1

公开(公告)日：2011-11-24

申请号：US13099613

申请日：2011-05-03

申请人： Kunio KIMURA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

发明人： Kunio KIMURA ,  Mitsuhiro ICHIJO ,  Toshiya ENDO

IPC分类号： H01L27/12 ,  H01L21/336

CPC分类号： H01L29/78606 ,  G02F1/133345 ,  G02F1/13394 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2203/64 ,  H01L21/3003 ,  H01L21/31629 ,  H01L27/1225 ,  H01L27/14616 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

摘要： One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.

摘要翻译： 一个目的是提供一种具有稳定的电特性和高可靠性的氧化物半导体的半导体装置。 另一个目的是以高产量制造高度可靠的半导体器件。 在包括氧化物半导体膜的顶栅交错晶体管中，作为与氧化物半导体膜接触的第一栅极绝缘膜，通过使用含有氟化硅和氧的沉积气体的等离子体CVD法形成氧化硅膜; 并且作为层叠在第一栅极绝缘膜上的第二栅极绝缘膜，通过使用含有氢化硅和氧的沉积气体的等离子体CVD法形成氧化硅膜。

公开(公告)号：US20110097877A1

公开(公告)日：2011-04-28

申请号：US12908228

申请日：2010-10-20

申请人： Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO

发明人： Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO

IPC分类号： H01L21/205 ,  C23C16/513

CPC分类号： H01L21/02532 ,  C23C16/45565 ,  C23C16/505 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper electrode includes a shower plate having a plurality of holes formed on a surface of the upper electrode which faces the lower electrode. A substrate is provided over the lower electrode. A gas containing a deposition gas and hydrogen is supplied to the reaction chamber from the shower plate through the hollow portion of the upper electrode, and a rare gas is supplied to the reaction chamber from a portion different from the upper electrode. Accordingly, high-frequency power is supplied to the upper electrode to generate plasma, so that a microcrystalline semiconductor layer is formed over the substrate.

摘要翻译： 提供了一种以高质量生产率制造微晶半导体层的技术。 在等离子体CVD装置的反应室中，上部电极和下部电极彼此平行地设置。 在上部电极中形成中空部，上部电极具有形成在上部电极的与下部电极相对的面上形成的多个孔的喷淋板。 衬底设置在下电极上。 含有沉积气体和氢气的气体从淋浴板通过上部电极的中空部分供应到反应室，并且稀有气体从不同于上部电极的部分供应到反应室。 因此，向上部电极提供高频电力以产生等离子体，从而在基板上形成微晶半导体层。

公开(公告)号：US20120100677A1

公开(公告)日：2012-04-26

申请号：US13343734

申请日：2012-01-05

申请人： Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO

发明人： Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO

IPC分类号： H01L21/336 ,  H01L21/205

CPC分类号： H01L21/02532 ,  C23C16/45565 ,  C23C16/505 ,  H01L21/02595 ,  H01L21/0262 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

摘要： A technique for manufacturing a microcrystalline semiconductor layer with high mass productivity is provided. In a reaction chamber of a plasma CVD apparatus, an upper electrode and a lower electrode are provided in almost parallel to each other. A hollow portion is formed in the upper electrode, and the upper electrode includes a shower plate having a plurality of holes formed on a surface of the upper electrode which faces the lower electrode. A substrate is provided over the lower electrode. A gas containing a deposition gas and hydrogen is supplied to the reaction chamber from the shower plate through the hollow portion of the upper electrode, and a rare gas is supplied to the reaction chamber from a portion different from the upper electrode. Accordingly, high-frequency power is supplied to the upper electrode to generate plasma, so that a microcrystalline semiconductor layer is formed over the substrate.

摘要翻译： 提供了一种以高质量生产率制造微晶半导体层的技术。 在等离子体CVD装置的反应室中，上部电极和下部电极彼此平行地设置。 在上部电极中形成中空部，上部电极具有形成在上部电极的与下部电极相对的面上形成的多个孔的喷淋板。 衬底设置在下电极上。 含有沉积气体和氢气的气体从淋浴板通过上部电极的中空部分供应到反应室，并且稀有气体从不同于上部电极的部分供应到反应室。 因此，向上部电极提供高频电力以产生等离子体，从而在基板上形成微晶半导体层。

公开(公告)号：US20120001168A1

公开(公告)日：2012-01-05

申请号：US13164806

申请日：2011-06-21

申请人： Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Kunihiko SUZUKI ,  Yasuhiko TAKEMURA

发明人： Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Kunihiko SUZUKI ,  Yasuhiko TAKEMURA

IPC分类号： H01L29/786

CPC分类号： H01L29/7869

摘要： In a transistor including an oxide semiconductor, hydrogen in the oxide semiconductor leads to degradation of electric characteristics of the transistor. Thus, an object is to provide a semiconductor device having good electrical characteristics. An insulating layer in contact with an oxide semiconductor layer where a channel region is formed is formed by a plasma CVD method using a silicon halide. The insulating layer thus formed has a hydrogen concentration less than 6×1020 atoms/cm3 and a halogen concentration greater than or equal to 1×1020 atoms/cm3; accordingly, hydrogen diffusion into the oxide semiconductor layer can be prevented and hydrogen in the oxide semiconductor layer is inactivated or released from the oxide semiconductor layer by the halogen, whereby a semiconductor device having good electrical characteristics can be provided.

摘要翻译： 在包括氧化物半导体的晶体管中，氧化物半导体中的氢导致晶体管的电特性的劣化。 因此，目的在于提供具有良好的电气特性的半导体器件。 通过使用卤化硅的等离子体CVD法形成与形成沟道区的氧化物半导体层接触的绝缘层。 如此形成的绝缘层的氢浓度小于6×1020原子/ cm3，卤素浓度大于或等于1×1020原子/ cm3; 因此，可以防止氢扩散到氧化物半导体层中，并且氧化物半导体层中的氢被卤素氧化半导体层失活或释放，从而可以提供具有良好电特性的半导体器件。

公开(公告)号：US20110309355A1

公开(公告)日：2011-12-22

申请号：US13157637

申请日：2011-06-10

申请人： Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Kunihiko SUZUKI

发明人： Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Kunihiko SUZUKI

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L21/441 ,  H01L21/477 ,  H01L29/247 ,  H01L29/42384 ,  H01L29/47 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78696

摘要： An object is to provide a semiconductor device having good electrical characteristics. A gate insulating layer having a hydrogen concentration less than 6×1020 atoms/cm3 and a fluorine concentration greater than or equal to 1×1020 atoms/cm3 is used as a gate insulating layer in contact with an oxide semiconductor layer forming a channel region, so that the amount of hydrogen released from the gate insulating layer can be reduced and diffusion of hydrogen into the oxide semiconductor layer can be prevented. Further, hydrogen present in the oxide semiconductor layer can be eliminated with the use of fluorine; thus, the hydrogen content in the oxide semiconductor layer can be reduced. Consequently, the semiconductor device having good electrical characteristics can be provided.

摘要翻译： 目的在于提供具有良好电气特性的半导体器件。 使用具有小于6×1020原子/ cm3的氢浓度和大于或等于1×1020原子/ cm3的氟浓度的栅极绝缘层作为与形成沟道区的氧化物半导体层接触的栅极绝缘层， 从而可以减少从栅极绝缘层释放的氢的量，并且可以防止氢向氧化物半导体层的扩散。 此外，可以通过使用氟来消除存在于氧化物半导体层中的氢; 因此，可以降低氧化物半导体层中的氢含量。 因此，可以提供具有良好电特性的半导体器件。

公开(公告)号：US20110053358A1

公开(公告)日：2011-03-03

申请号：US12860175

申请日：2010-08-20

申请人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

发明人： Satoshi TORIUMI ,  Ryota TAJIMA ,  Takashi OHTSUKI ,  Tetsuhiro TANAKA ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Kazutaka KURIKI ,  Tomokazu YOKOI ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/20

CPC分类号： H01J37/32541 ,  C23C16/24 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0262 ,  H01L29/66765 ,  H01L29/78696

摘要： An object of one embodiment of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film (e.g., a microcrystalline semiconductor film) without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

摘要翻译： 本发明的一个实施例的目的是提供一种在晶粒之间没有空腔的致密结晶半导体膜（例如，微晶半导体膜）的制造技术。 在等离子体CVD装置的反应室中的反应气体的压力设定为：将第一电极和第二电极的反应气体的压力设定为第一电极的状态下，向第一电极供给60MHz以下的高频电力，在第一电极与第二电极之间形成等离子体区域 450Pa〜13332Pa，等离子体CVD装置的第一电极和第二电极之间的距离设定为1mm〜20mm; 在包括等离子体区域的气相中形成结晶沉积前体; 通过沉积沉积前体形成5nm至15nm的晶核; 并且通过从晶核生长晶体形成微晶半导体膜。

公开(公告)号：US20110089425A1

公开(公告)日：2011-04-21

申请号：US12969789

申请日：2010-12-16

申请人： Mitsuhiro ICHIJO ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

发明人： Mitsuhiro ICHIJO ,  Kenichi OKAZAKI ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L29/92

CPC分类号： H01L27/1266 ,  C23C16/02 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/31155 ,  H01L21/3143 ,  H01L21/31608 ,  H01L21/67207 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/13

摘要： A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface, which can be enlarged, at low substrate temperature, is provided. A monosilane gas (SiH4), nitrous oxide (N2O), and a rare gas are introduced into a chamber to generate high-density plasma at a pressure higher than or equal to 10 Pa and lower than or equal to 30 Pa so that an insulating film is formed over a substrate having an insulating surface. After that, the supply of a monosilane gas is stopped, and nitrous oxide (N2O) and a rare gas are introduced without exposure to the air to perform plasma treatment on a surface of the insulating film.

摘要翻译： 提供了用作半导体集成电路的绝缘膜的绝缘膜的制造方法，其即使厚度小也能够确保其可靠性。 特别地，提供了一种在低基板温度下在具有绝缘表面的基板上制造高品质绝缘膜的方法，该绝缘表面可以被扩大。 将甲硅烷气体（SiH 4），一氧化二氮（N 2 O）和稀有气体引入室中以在高于或等于10Pa且低于或等于30Pa的压力下产生高密度等离子体，使得绝缘 膜形成在具有绝缘表面的基板上。 之后，停止供给单硅烷气体，一边不暴露于空气中一氧化二氮（N2O）和稀有气体被引入到绝缘膜的表面进行等离子体处理。

公开(公告)号：US20100124804A1

公开(公告)日：2010-05-20

申请号：US12617406

申请日：2009-11-12

申请人： Erika TAKAHASHI ,  Takayuki KATO ,  Hidekazu MIYAIRI ,  Yasuhiro JINBO ,  Mitsuhiro ICHIJO ,  Tomokazu YOKOI

发明人： Erika TAKAHASHI ,  Takayuki KATO ,  Hidekazu MIYAIRI ,  Yasuhiro JINBO ,  Mitsuhiro ICHIJO ,  Tomokazu YOKOI

IPC分类号： H01L21/336

CPC分类号： H01L27/1288 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/50 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

摘要： An object is to provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity. A gate electrode is formed over a substrate and a gate insulating layer is formed over the gate electrode. A first semiconductor layer is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas. Next, a second semiconductor layer including an amorphous semiconductor and a microcrystal semiconductor is formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity imparting one conductivity is added is formed and a conductive film is formed. Thus, a thin film transistor is manufactured.

摘要翻译： 本发明的目的在于提供一种制造具有良好的电特性，高生产率的薄膜晶体管的方法。 在基板上形成栅电极，在栅电极上形成栅极绝缘层。 通过使用包含硅或锗，氢气和稀有气体的沉积气体产生等离子体，在栅绝缘层上形成第一半导体层。 接下来，以这样的方式形成包括非晶半导体和微晶半导体的第二半导体层，使得通过使用包含硅或锗的沉积气体，氢气和含有气体的气体产生等离子体，将第一半导体层部分地生长为晶种 氮。 然后，形成添加有赋予一种导电性的杂质的半导体层，形成导电膜。 因此，制造薄膜晶体管。

公开(公告)号：US20090011611A1

公开(公告)日：2009-01-08

申请号：US12130307

申请日：2008-05-30

申请人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI ,  Naoya SAKAMOTO

发明人： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Takashi OHTSUKI ,  Seiji YASUMOTO ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI ,  Naoya SAKAMOTO

IPC分类号： H01L21/469

CPC分类号： H01L21/31608 ,  C23C16/4404 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/1214 ,  H01L27/1259 ,  H01L29/4908

摘要： It is an object to provide a method for manufacturing a semiconductor device that has a semiconductor element including a film in which mixing impurities is suppressed. It is another object to provide a method for manufacturing a semiconductor device with high yield. In a method for manufacturing a semiconductor device in which an insulating film is formed in contact with a semiconductor layer provided over a substrate having an insulating surface with use of a plasma CVD apparatus, after an inner wall of a reaction chamber of the plasma CVD apparatus is coated with a film that does not include an impurity to the insulating film, a substrate is introduced in the reaction chamber, and the insulating film is deposited over the substrate. As a result, an insulating film in which the amount of impurities is reduced can be formed.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件具有包含其中抑制混合杂质的膜的半导体元件。 另一个目的是提供一种以高产率制造半导体器件的方法。 在制造半导体器件的方法中，其中绝缘膜与使用等离子体CVD装置的具有绝缘表面的衬底上提供的半导体层形成接触，在等离子体CVD装置的反应室的内壁 涂覆有不含杂质的薄膜，在反应室中引入基板，并将绝缘膜沉积在基板上。 结果，可以形成其中杂质减少量的绝缘膜。