公开(公告)号：US5368632A

公开(公告)日：1994-11-29

申请号：US43517

申请日：1993-04-06

申请人： Krishnan Rajeshwar ,  Chang Wei ,  Sanjay Basak

发明人： Krishnan Rajeshwar ,  Chang Wei ,  Sanjay Basak

IPC分类号： C02F1/70 ,  C02F9/00 ,  C22B3/24

CPC分类号： C02F9/00 ,  C02F1/70 ,  C02F2101/20 ,  Y10S423/14

摘要： The treatment of solutions of metal ions with redox polymers under conditions to reduce the ions to a lower valence. The resulting solutions of the lower valence ions are separated from the polymers, and the polymers are regenerated for further use in such treatment. The method of the invention is employed to convert high valence, toxic metal ions to lower valence ions of reduced toxicity. Preferably, the electronically conductive polymer is mounted on a suitable support, and a solution of the toxic metal ion is brought into contact with the polymer. A variety of redox polymers, in particular, electronically conductive polymers, may be used in the practice of the invention, and individual such polymers may be structurally altered to suit particular metal ions. Polymers especially contemplated for use in the invention are polypyrroles, polyanilines and polythiophenes. All of these polymers are characterized as redox polymers with a positive charge on their backbones. In general, suitable polymers are redox polymers bearing a positive charge on their backbones with an E.sub.o of the (surface) redox couple sufficiently negative to react with a metal ion of interest. Thus, for example, an E.sub.o more negative than 1.16V is preferred for the recovery of Cr(VI).

摘要翻译： 在氧化还原聚合物的条件下处理金属离子溶液以将离子降低至较低的价态。 所得到的低价离子的溶液与聚合物分离，聚合物再生再进一步用于这种处理。 本发明的方法用于将高价，有毒金属离子转化为毒性降低的低价离子。 优选地，将电子导电聚合物安装在合适的载体上，使有毒金属离子的溶液与聚合物接触。 各种氧化还原聚合物，特别是电子导电聚合物，可用于本发明的实践中，并且各种这样的聚合物可在结构上改变以适合特定的金属离子。 聚苯乙烯，聚苯胺，聚噻吩等。 所有这些聚合物都表征为在其主链上具有正电荷的氧化还原聚合物。 通常，合适的聚合物是在其主链上带有正电荷的氧化还原聚合物，其中（表面）氧化还原对的Eo足够负，以与感兴趣的金属离子反应。 因此，例如，对于Cr（VI）的回收率，优选比1.16V更负的Eo。

公开(公告)号：US06387188B1

公开(公告)日：2002-05-14

申请号：US09261868

申请日：1999-03-03

申请人： Thomas Laursen ,  Malcolm K. Grief ,  Krishna P. Murella ,  Sanjay Basak

发明人： Thomas Laursen ,  Malcolm K. Grief ,  Krishna P. Murella ,  Sanjay Basak

IPC分类号： B08B304

CPC分类号： B24B53/017

摘要： A method of conditioning pads used in the polishing of semiconductor wafers containing copper circuitry. The method includes applying a treatment solution that contains a reactant for particulate copper-containing debris on the pad resulting from the copper circuitry. Preferably, the reactant is a carboxylic acid present in a concentration of from about 0.1 to about 10 weight percent in a solution. The pH of the solution may be adjusted to the range from about 1 to about 6 with a compatible base.

摘要翻译： 一种用于抛光包含铜电路的半导体晶片的调节垫的方法。 该方法包括在由铜电路产生的衬垫上施加含有颗粒状含铜碎屑的反应物的处理溶液。 优选地，反应物是在溶液中以约0.1至约10重量％的浓度存在的羧酸。 溶液的pH可以用相容的碱调节至约1至约6的范围。

公开(公告)号：US20060255016A1

公开(公告)日：2006-11-16

申请号：US11489874

申请日：2006-07-19

申请人： Julia Svirchevski ,  Saket Chadda ,  Ismail Emesh ,  Thomas Laursen ,  Bentley Palmer ,  Sanjay Basak ,  Krishna Murella

发明人： Julia Svirchevski ,  Saket Chadda ,  Ismail Emesh ,  Thomas Laursen ,  Bentley Palmer ,  Sanjay Basak ,  Krishna Murella

IPC分类号： C03C15/00 ,  H01L21/461

CPC分类号： B24B27/0023 ,  B24B37/042 ,  B24B37/345 ,  H01L21/3212

摘要： A method for polishing a metal layer on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface, maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade, and chemically removing the film.

摘要翻译： 提供了一种在工件上抛光金属层的方法，其中在金属层和抛光表面之间产生相对运动，并且其中金属层在其上具有防抛光膜。 首先对金属层进行预处理以基本上除去耐抛光膜。 接着，在抛光液的存在下，金属层在金属层与研磨面之间以低压被抛光。 预处理可以通过例如溅射来实现，在研磨抛光溶液的存在下抛光耐抛光膜，在膜和抛光表面之间以更高的压力抛光耐抛光膜，保持预处理步骤的温度 基本上在10摄氏度和30摄氏度之间，并化学去除膜。

公开(公告)号：US06555466B1

公开(公告)日：2003-04-29

申请号：US09280767

申请日：1999-03-29

申请人： Thomas Laursen ,  Malcolm K. Grief ,  Krishna P. Murella ,  Sanjay Basak

发明人： Thomas Laursen ,  Malcolm K. Grief ,  Krishna P. Murella ,  Sanjay Basak

IPC分类号： H01L214763

CPC分类号： H01L21/7684 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76819

摘要： A method of improving planarity of semiconductor wafer surfaces containing damascene and dual-damascene circuitry using chemical-mechanical polishing techniques. The method includes using a first polishing step to substantially remove excess surface metal up to a detected end point. After rinsing, a second step of chemical-mechanical polishing is applied, using a second slurry that has a higher selectivity for dielectric than metal, preferably from 1.8 to 4 or more times greater. The second step of polishing, in accordance with the invention, has been found to substantially eliminate dishing and improve planarity.

摘要翻译： 使用化学机械抛光技术改善包含镶嵌和双镶嵌电路的半导体晶片表面的平面性的方法。 该方法包括使用第一抛光步骤将基本上除去多余的表面金属直到检测到的终点。 冲洗后，使用具有比金属更高的电介质选择性的第二浆料，优选为1.8至4倍或更多倍的化学机械抛光的第二步骤。 已经发现根据本发明的抛光的第二步骤基本上消除了凹陷并改善了平面度。