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23 条记录 (耗时 0.025 秒)

    Method for polishing copper on a workpiece surface
    1.
    发明申请
    Method for polishing copper on a workpiece surface 审中-公开
    在工件表面上抛光铜的方法

    公开(公告)号：US20060255016A1

    公开(公告)日：2006-11-16

    申请号：US11489874

    申请日：2006-07-19

    申请人： Julia Svirchevski ,  Saket Chadda ,  Ismail Emesh ,  Thomas Laursen ,  Bentley Palmer ,  Sanjay Basak ,  Krishna Murella

    发明人： Julia Svirchevski ,  Saket Chadda ,  Ismail Emesh ,  Thomas Laursen ,  Bentley Palmer ,  Sanjay Basak ,  Krishna Murella

    IPC分类号： C03C15/00 ,  H01L21/461

    CPC分类号： B24B27/0023 ,  B24B37/042 ,  B24B37/345 ,  H01L21/3212

    摘要： A method for polishing a metal layer on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface, maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade, and chemically removing the film.

    摘要翻译： 提供了一种在工件上抛光金属层的方法，其中在金属层和抛光表面之间产生相对运动，并且其中金属层在其上具有防抛光膜。 首先对金属层进行预处理以基本上除去耐抛光膜。 接着，在抛光液的存在下，金属层在金属层与研磨面之间以低压被抛光。 预处理可以通过例如溅射来实现，在研磨抛光溶液的存在下抛光耐抛光膜，在膜和抛光表面之间以更高的压力抛光耐抛光膜，保持预处理步骤的温度 基本上在10摄氏度和30摄氏度之间，并化学去除膜。

    Method and apparatus for electrochemical planarization of a workpiece
    3.
    发明授权
    Method and apparatus for electrochemical planarization of a workpiece 有权
    工件电化学平面化的方法和装置

    公开(公告)号：US06736952B2

    公开(公告)日：2004-05-18

    申请号：US09781593

    申请日：2001-02-12

    申请人： Ismail Emesh ,  Saket Chadda ,  Nikolay N. Korovin ,  Brian L. Mueller

    发明人： Ismail Emesh ,  Saket Chadda ,  Nikolay N. Korovin ,  Brian L. Mueller

    IPC分类号： B23H508

    CPC分类号： B24B37/20 ,  B23H5/08 ,  B24B37/12 ,  C25F3/02 ,  C25F7/00 ,  H01L21/32125 ,  H01L21/7684

    摘要： An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

    摘要翻译： 用于平坦化工件上的金属化表面的电化学平面化装置包括抛光垫和压板。 压板由导电材料形成，靠近抛光垫设置并且被配置为在平坦化处理的至少一部分期间具有负电荷。 至少一个电导体位于压板内。 电导体具有连接到电源的第一端。 工件载体构造成承载工件并将工件压靠在抛光垫上。 电源通过电导体向工件施加正电荷，使得产生工件的金属化表面和压板之间的电位差以从工件移除金属化表面的至少一部分。

    Method and apparatus for electrochemical planarization of a workpiece
    4.
    发明授权
    Method and apparatus for electrochemical planarization of a workpiece 有权
    工件电化学平面化的方法和装置

    公开(公告)号：US06974525B2

    公开(公告)日：2005-12-13

    申请号：US10709598

    申请日：2004-05-17

    申请人： Ismail Emesh ,  Saket Chadda ,  Nikolay N. Korovin ,  Brian L. Mueller

    发明人： Ismail Emesh ,  Saket Chadda ,  Nikolay N. Korovin ,  Brian L. Mueller

    IPC分类号： B23H5/08 ,  B24B37/12 ,  B24B37/20 ,  H01L21/321 ,  C25F3/02

    CPC分类号： B24B37/20 ,  B23H5/08 ,  B24B37/12 ,  C25F3/02 ,  C25F7/00 ,  H01L21/32125 ,  H01L21/7684

    摘要： An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

    摘要翻译： 用于平坦化工件上的金属化表面的电化学平面化装置包括抛光垫和压板。 压板由导电材料形成，靠近抛光垫设置并且被配置为在平坦化处理的至少一部分期间具有负电荷。 至少一个电导体位于压板内。 电导体具有连接到电源的第一端。 工件载体构造成承载工件并将工件压靠在抛光垫上。 电源通过电导体向工件施加正电荷，使得产生工件的金属化表面和压板之间的电位差以从工件移除金属化表面的至少一部分。

    Apparatus and process for polishing a workpiece
    5.
    发明授权
    Apparatus and process for polishing a workpiece 失效
    用于抛光工件的设备和工艺

    公开(公告)号：US06849547B2

    公开(公告)日：2005-02-01

    申请号：US09826674

    申请日：2001-04-05

    申请人： Saket Chadda ,  Ismail Emesh ,  Brian L. Mueller

    发明人： Saket Chadda ,  Ismail Emesh ,  Brian L. Mueller

    IPC分类号： B24B57/02 ,  H01L21/321 ,  H01L21/302 ,  H01L21/461

    CPC分类号： B24B57/02 ,  H01L21/3212

    摘要： A process for removing a metallized surface from a workpiece is provided. A kinetic removal mechanism for removal of the metallized surface is characterized by a formation step for formation of a removable surface film and an abrasive step for removal of the film. The process includes causing the workpiece to contact a polishing surface while effecting relative motion between the workpiece and the polishing surface. The process also includes causing a polishing solution having less than 1 wt % of a polishing abrasive to be distributed at a contact area between the workpiece and the polishing surface so that the abrasive step is a rate-determining step of the removal mechanism.

    摘要翻译： 提供了从工件去除金属化表面的工艺。 用于去除金属化表面的动力去除机构的特征在于形成可移除表面膜的形成步骤和用于除去膜的研磨步骤。 该过程包括使工件接触抛光表面，同时实现工件和抛光表面之间的相对运动。 该方法还包括使具有小于1重量％的抛光磨料的抛光溶液分布在工件和抛光表面之间的接触区域处，使得研磨步骤是除去机构的速率确定步骤。

    Method and apparatus for electrochemical planarization of a workpiece
    7.
    发明授权
    Method and apparatus for electrochemical planarization of a workpiece 有权
    工件电化学平面化的方法和装置

    公开(公告)号：US08268135B2

    公开(公告)日：2012-09-18

    申请号：US11164270

    申请日：2005-11-16

    申请人： Ismail Emesh ,  Saket Chadda ,  Nikolay N Korovin ,  Brian L Mueller

    发明人： Ismail Emesh ,  Saket Chadda ,  Nikolay N Korovin ,  Brian L Mueller

    IPC分类号： C25F3/16 ,  C25F3/30

    CPC分类号： B24B37/20 ,  B23H5/08 ,  B24B37/12 ,  C25F3/02 ,  C25F7/00 ,  H01L21/32125 ,  H01L21/7684

    摘要： An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

    摘要翻译： 用于平坦化工件上的金属化表面的电化学平面化装置包括抛光垫和压板。 压板由导电材料形成，靠近抛光垫设置并且被配置为在平坦化处理的至少一部分期间具有负电荷。 至少一个电导体位于压板内。 电导体具有连接到电源的第一端。 工件载体构造成承载工件并将工件压靠在抛光垫上。 电源通过电导体向工件施加正电荷，使得产生工件的金属化表面和压板之间的电位差以从工件移除金属化表面的至少一部分。

    METHOD AND APPARATUS FOR ELECTROCHEMICAL PLANARIZATION OF A WORKPIECE
    8.
    发明申请
    METHOD AND APPARATUS FOR ELECTROCHEMICAL PLANARIZATION OF A WORKPIECE 有权
    工业电化学平面化方法与装置

    公开(公告)号：US20060081460A1

    公开(公告)日：2006-04-20

    申请号：US11164270

    申请日：2005-11-16

    申请人： Ismail Emesh ,  Saket Chadda ,  Nikolay Korovin ,  Brian Mueller

    发明人： Ismail Emesh ,  Saket Chadda ,  Nikolay Korovin ,  Brian Mueller

    IPC分类号： C25D17/00 ,  C25B9/00

    CPC分类号： B24B37/20 ,  B23H5/08 ,  B24B37/12 ,  C25F3/02 ,  C25F7/00 ,  H01L21/32125 ,  H01L21/7684

    摘要： An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a polishing pad and a platen. The platen is formed of conductive material, is disposed proximate to the polishing pad and is configured to have a negative charge during at least a portion of a planarization process. At least one electrical conductor is positioned within the platen. The electrical conductor has a first end connected to a power source. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing pad. The power source applies a positive charge to the workpiece via the electrical conductor so that an electric potential difference between the metallized surface of the workpiece and the platen is created to remove at least a portion of the metallized surface from the workpiece.

    摘要翻译： 用于平坦化工件上的金属化表面的电化学平面化装置包括抛光垫和压板。 压板由导电材料形成，靠近抛光垫设置并且被配置为在平坦化处理的至少一部分期间具有负电荷。 至少一个电导体位于压板内。 电导体具有连接到电源的第一端。 工件载体构造成承载工件并将工件压靠在抛光垫上。 电源通过电导体向工件施加正电荷，使得产生工件的金属化表面和压板之间的电位差以从工件移除金属化表面的至少一部分。

    Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
    9.
    发明授权
    Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing 失效
    化学机械抛光过程中厚度原位监测的方法和装置

    公开(公告)号：US06621584B2

    公开(公告)日：2003-09-16

    申请号：US09558877

    申请日：2000-04-26

    申请人： Jiri Pecen ,  Saket Chadda ,  Rahul Jairath ,  Wilbur C. Krusell

    发明人： Jiri Pecen ,  Saket Chadda ,  Rahul Jairath ,  Wilbur C. Krusell

    IPC分类号： G01B1106

    CPC分类号： B24B37/205 ,  B24B49/04 ,  G01B11/0683

    摘要： An apparatus and method for in-situ monitoring of thickness during chemical-mechanical polishing (CMP) of a substrate using a polishing tool and a film thickness monitor. The tool has an opening placed in it. The opening contains a monitoring window secured in it to create a monitoring channel. A film thickness monitor (comprising an ellipsometer, a beam profile reflectometer, or a stress pulse analyzer) views the substrate through the monitoring channel to provide an indication of the thickness of a film carried by the substrate. This information can be used to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

    摘要翻译： 一种用于使用抛光工具和膜厚度监测器在基板的化学机械抛光（CMP）期间原位监测厚度的装置和方法。 工具上有一个开口。 该开头包含一个保护在其中的监控窗口，以创建监控通道。 膜厚监视器（包括椭圆偏振器，光束轮廓反射计或应力脉冲分析器）通过监测通道观察衬底，以提供由衬底承载的膜的厚度的指示。 该信息可用于确定CMP过程的终点，确定衬底任何给定周长处的去除率，确定跨衬底表面的平均去除速率，确定衬底表面上的去除速率变化，以及优化除去速率和均匀性 。