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    Method for polishing copper on a workpiece surface
    1.
    发明申请
    Method for polishing copper on a workpiece surface 审中-公开
    在工件表面上抛光铜的方法

    公开(公告)号：US20060255016A1

    公开(公告)日：2006-11-16

    申请号：US11489874

    申请日：2006-07-19

    申请人： Julia Svirchevski ,  Saket Chadda ,  Ismail Emesh ,  Thomas Laursen ,  Bentley Palmer ,  Sanjay Basak ,  Krishna Murella

    发明人： Julia Svirchevski ,  Saket Chadda ,  Ismail Emesh ,  Thomas Laursen ,  Bentley Palmer ,  Sanjay Basak ,  Krishna Murella

    IPC分类号： C03C15/00 ,  H01L21/461

    CPC分类号： B24B27/0023 ,  B24B37/042 ,  B24B37/345 ,  H01L21/3212

    摘要： A method for polishing a metal layer on a workpiece is provided wherein relative motion is produced between the metal layer and a polishing surface and wherein the metal layer has a polish resistant film thereon. The metal layer is first pre-treated to substantially remove the polish resistant film. Next, the metal layer is polished at low pressure between the metal layer and the polishing surface in the presence of a polishing solution. The pretreating may be accomplished by, for example, sputtering, polishing the polish-resistant film in the presence of abrasive polishing solution, polishing the polish-resistant film at higher pressures between the film and the polishing surface, maintaining the temperature of the pretreating step to be substantially between 10 degrees Centigrade and 30 degrees Centigrade, and chemically removing the film.

    摘要翻译： 提供了一种在工件上抛光金属层的方法，其中在金属层和抛光表面之间产生相对运动，并且其中金属层在其上具有防抛光膜。 首先对金属层进行预处理以基本上除去耐抛光膜。 接着，在抛光液的存在下，金属层在金属层与研磨面之间以低压被抛光。 预处理可以通过例如溅射来实现，在研磨抛光溶液的存在下抛光耐抛光膜，在膜和抛光表面之间以更高的压力抛光耐抛光膜，保持预处理步骤的温度 基本上在10摄氏度和30摄氏度之间，并化学去除膜。

    Chemical dilution system for semiconductor device processing system
    3.
    发明授权
    Chemical dilution system for semiconductor device processing system 失效
    半导体器件处理系统化学稀释系统

    公开(公告)号：US07364349B2

    公开(公告)日：2008-04-29

    申请号：US11439303

    申请日：2006-05-22

    申请人： Younes Achkire ,  Julia Svirchevski ,  Jonathan S. Frankel ,  Kien-Bang Lam

    发明人： Younes Achkire ,  Julia Svirchevski ,  Jonathan S. Frankel ,  Kien-Bang Lam

    IPC分类号： B01F15/04

    CPC分类号： H01L21/67253 ,  G05D11/133

    摘要： A dilution stage is adapted to supply a dilute chemistry to a semiconductor device processing apparatus. The dilution stage includes a first vessel adapted to store the chemistry after dilution and a second vessel adapted to store the chemistry prior to dilution. The dilution stage may also include a control mechanism which is adapted to selectively control flowing of the chemistry and a dilutant to the first vessel. The control mechanism may be operative to fill the second vessel with the chemistry, and to flow the dilutant to the first vessel via the second vessel.

    摘要翻译： 稀释阶段适于向半导体器件处理设备提供稀释化学物质。 稀释阶段包括适于在稀释后储存化学物质的第一容器和适于在稀释之前储存化学物质的第二容器。 稀释阶段还可以包括适于选择性地控制化学物质和稀释剂流向第一容器的控制机构。 控制机构可操作以用化学物质填充第二容器，并且通过第二容器将稀释剂流经第一容器。

    Pad-assisted electropolishing
    4.
    发明申请
    Pad-assisted electropolishing 审中-公开
    垫辅助电解抛光

    公开(公告)号：US20090266707A1

    公开(公告)日：2009-10-29

    申请号：US11890551

    申请日：2007-08-06

    申请人： Steven T. Mayer ,  Julia Svirchevski ,  John Stephen Drewery

    发明人： Steven T. Mayer ,  Julia Svirchevski ,  John Stephen Drewery

    IPC分类号： C25B9/00

    CPC分类号： C25F3/30 ,  H01L21/32115 ,  H01L21/32125

    摘要： Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.

    摘要翻译： 通过在衬底的第一部分处执行金属的阳极溶解并且用抛光垫同时机械抛光衬底的第二部分来进行衬底辅助电抛光。 阳极溶解包括在阳极底物和阴极电解抛光头之间形成电解抛光液体的薄液体层。 基板和电源之间的电触点的位置允许基板的外围边缘区域被该机械抛光。 优选地，使用各向同性材料去除技术进一步平坦化基底。 一种设备包括电抛光头，该电抛光头可移动到接近基底的第一部分的位置以形成薄间隙;以及抛光垫，其利用最小的压力机械地抛光所述基底的第二部分。

    Pad-assisted electropolishing
    5.
    发明授权
    Pad-assisted electropolishing 失效
    垫辅助电解抛光

    公开(公告)号：US07686935B2

    公开(公告)日：2010-03-30

    申请号：US11213190

    申请日：2005-08-26

    申请人： Steven T. Mayer ,  Julia Svirchevski ,  John Stephen Drewery

    发明人： Steven T. Mayer ,  Julia Svirchevski ,  John Stephen Drewery

    IPC分类号： B23H5/06

    CPC分类号： C25F3/30 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/6715

    摘要： Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.

    摘要翻译： 通过在衬底的第一部分处执行金属的阳极溶解并且用抛光垫同时机械抛光衬底的第二部分来进行衬底辅助电抛光。 阳极溶解包括在阳极底物和阴极电解抛光头之间形成电解抛光液体的薄液体层。 基板和电源之间的电触点的位置允许基板的外围边缘区域被该机械抛光。 优选地，使用各向同性材料去除技术进一步平坦化基底。 一种设备包括电抛光头，该电抛光头可移动到接近基底的第一部分的位置以形成薄间隙;以及抛光垫，其利用最小的压力机械地抛光所述基底的第二部分。

    Pad-assisted electropolishing
    6.
    发明申请
    Pad-assisted electropolishing 失效

    公开(公告)号：US20090277802A1

    公开(公告)日：2009-11-12

    申请号：US11213190

    申请日：2005-08-26

    申请人： Steven T. Mayer ,  Julia Svirchevski ,  John Stephen Drewery

    发明人： Steven T. Mayer ,  Julia Svirchevski ,  John Stephen Drewery

    IPC分类号： B23H5/08

    CPC分类号： C25F3/30 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/6715

    摘要： Pad-assisted electropolishing of the substrate is conducted by performing anodic dissolution of metal at a first portion of the substrate and simultaneously mechanically buffing a second portion of the substrate with a buffing pad. Anodic dissolution includes forming a thin liquid layer of electropolishing liquid between the anodic substrate and a cathodic electropolishing head. The location of electrical contacts between the substrate and power supply allow peripheral edge regions of the substrate to be mechanically buffed with the pad. Preferably, a substrate is further planararized using an isotropic material-removal technique. An apparatus includes an electropolishing head that is movable to a position proximate to a first portion of a substrate to form a thin gap, and a buffing pad that mechanically buffs a second portion of the substrate using minimal pressure.

    SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE
    7.
    发明申请
    SINGLE WAFER METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING AN INERT GAS AIR-KNIFE 审中-公开
    使用惰性气体空气干燥半导体基板的单波长方法和装置

    公开(公告)号：US20090078292A1

    公开(公告)日：2009-03-26

    申请号：US12249960

    申请日：2008-10-12

    申请人： Nathan D. Stein ,  Younes Achkire ,  Timothy J. Franklin ,  Julia Svirchevski ,  Dan A. Marohl

    发明人： Nathan D. Stein ,  Younes Achkire ,  Timothy J. Franklin ,  Julia Svirchevski ,  Dan A. Marohl

    IPC分类号： B08B13/00

    CPC分类号： H01L21/67034

    摘要： In one aspect, an apparatus is provided. The apparatus comprises a chamber; a plurality of rollers adapted to support a wafer in a vertical orientation within a chamber; a pair of brushes adapted to scrub a first and a second side of the wafer respectively; a first spray bar adapted to spray a liquid on the wafer to form a meniscus on the wafer as the wafer is lifted out of the chamber; and a second spray bar adapted to direct a vapor to the meniscus, the vapor being adapted to lower a surface tension of the liquid at the meniscus to perform Marangoni drying of the wafer as the wafer is lifted out of the chamber. Numerous other aspects are provided.

    摘要翻译： 一方面，提供了一种装置。 该装置包括一个室; 适于在腔室内以垂直取向支撑晶片的多个辊; 一对刷子，分别用于擦拭所述晶片的第一和第二侧; 第一喷杆，当晶片被提升出室时，适于在晶片上喷射液体以在晶片上形成弯月面; 以及适于将蒸汽引导到弯液面的第二喷杆，所述蒸汽适于降低所述弯液面处的液体的表面张力，以在所述晶片被提升到所述腔室之后执行所述晶片的马兰戈尼干燥。 提供了许多其他方面。

    Chemical dilution system for semiconductor device processing system
    10.
    发明申请
    Chemical dilution system for semiconductor device processing system 失效
    半导体器件处理系统化学稀释系统

    公开(公告)号：US20060211344A1

    公开(公告)日：2006-09-21

    申请号：US11439303

    申请日：2006-05-22

    申请人： Younes Achkire ,  Julia Svirchevski ,  Jonathan Frankel ,  Kien-Bang Lam

    发明人： Younes Achkire ,  Julia Svirchevski ,  Jonathan Frankel ,  Kien-Bang Lam

    IPC分类号： B24B1/00

    CPC分类号： H01L21/67253 ,  G05D11/133

    摘要： A dilution stage is adapted to supply a dilute chemistry to a semiconductor device processing apparatus. The dilution stage includes a first vessel adapted to store the chemistry after dilution and a second vessel adapted to store the chemistry prior to dilution. The dilution stage may also include a control mechanism which is adapted to selectively control flowing of the chemistry and a dilutant to the first vessel. The control mechanism may be operative to fill the second vessel with the chemistry, and to flow the dilutant to the first vessel via the second vessel.

    摘要翻译： 稀释阶段适于向半导体器件处理设备提供稀释化学物质。 稀释阶段包括适于在稀释后储存化学物质的第一容器和适于在稀释之前储存化学物质的第二容器。 稀释阶段还可以包括适于选择性地控制化学物质和稀释剂流向第一容器的控制机构。 控制机构可操作以用化学物质填充第二容器，并且通过第二容器将稀释剂流经第一容器。