公开(公告)号：US20070243484A1

公开(公告)日：2007-10-18

申请号：US11405879

申请日：2006-04-18

申请人： Kuang-Jung Chen ,  Mahmoud Khojasteh ,  Ranee Kwong ,  Margaret Lawson ,  Wenjie Li ,  Kaushal Patel ,  Pushkara Varanasi

发明人： Kuang-Jung Chen ,  Mahmoud Khojasteh ,  Ranee Kwong ,  Margaret Lawson ,  Wenjie Li ,  Kaushal Patel ,  Pushkara Varanasi

IPC分类号： G03C1/00

CPC分类号： G03F7/091 ,  C08F220/28 ,  C08F222/40 ,  C08F232/08 ,  Y10S430/151

摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a positive photoresist composition. The antireflective coating composition is developable in an aqueous alkaline developer. The antireflective coating composition comprises a polymer, which comprises at least one monomer unit containing one or more moieties selected from the group consisting of a lactone, maleimide, and an N-alkyl maleimide; and at least one monomer unit containing one or more absorbing moieties. The polymer does not comprise an acid labile group. The present invention also discloses a method of forming and transferring a relief image by using the inventive antireflective coating composition in photolithography.

摘要翻译： 本发明公开了一种用于在基材表面和正性光致抗蚀剂组合物之间施加的抗反射涂料组合物。 抗反射涂料组合物可在含水碱性显影剂中显影。 抗反射涂料组合物包括聚合物，其包含至少一种含有一个或多个选自内酯，马来酰亚胺和N-烷基马来酰亚胺的部分的单体单元; 和含有一个或多个吸收部分的至少一个单体单元。 聚合物不包含酸不稳定基团。 本发明还公开了一种通过在光刻中使用本发明的抗反射涂料组合物来形成和转印浮雕图像的方法。

公开(公告)号：US20070231736A1

公开(公告)日：2007-10-04

申请号：US11391187

申请日：2006-03-28

申请人： Kuang-Jung Chen ,  Mahmoud Khojasteh ,  Ranee Kwong ,  Wenjie Li ,  Kaushal Patel ,  Pushkara Varanasi

发明人： Kuang-Jung Chen ,  Mahmoud Khojasteh ,  Ranee Kwong ,  Wenjie Li ,  Kaushal Patel ,  Pushkara Varanasi

IPC分类号： G03C1/00

CPC分类号： G03F7/091

摘要： The present invention discloses an antireflective coating composition for applying between a substrate surface and a photoresist composition. The antireflective coating composition of the present invention comprises a polymer, which includes at least one monomer unit containing a lactone moiety and at least one monomer unit containing an absorbing moiety. The inventive antireflective coating composition is preferably organic solvent-strippable, insoluble in an aqueous alkaline developer for the photoresist composition after exposure to an imaging radiation, and inert to contact reactions with the photoresist composition. The present invention also discloses a method of forming patterned material features on a substrate using the compositions of the invention.

摘要翻译： 本发明公开了一种用于在基材表面和光致抗蚀剂组合物之间施加的抗反射涂料组合物。 本发明的抗反射涂料组合物包括聚合物，其包含至少一个含有内酯部分的单体单元和至少一个含有吸收部分的单体单元。 本发明的抗反射涂料组合物优选是有机溶剂可剥离的，在暴露于成像辐射之后不溶于用于光致抗蚀剂组合物的水性碱性显影剂，并且与光致抗蚀剂组合物的接触反应惰性。 本发明还公开了使用本发明的组合物在衬底上形成图案化材料特征的方法。

公开(公告)号：US20060105269A1

公开(公告)日：2006-05-18

申请号：US10988137

申请日：2004-11-12

申请人： Mahmoud Khojasteh ,  Pushkara Varanasi ,  Wenjie Li ,  Kuang-Jung Chen ,  Kaushal Patel

发明人： Mahmoud Khojasteh ,  Pushkara Varanasi ,  Wenjie Li ,  Kuang-Jung Chen ,  Kaushal Patel

IPC分类号： G03C1/76

CPC分类号： G03F7/0397 ,  C08F220/18 ,  C08F220/24 ,  C08F220/28 ,  G03F7/0046 ,  G03F7/0382 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/122 ,  Y10S430/126

摘要： A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.

摘要翻译： 公开了包含聚合物的光致抗蚀剂组合物，其中聚合物包括至少一种具有下式的单体：其中R 1表示氢（H），1至20个碳的直链，支链或环烷基 ，碳原子数为1〜20的半全氟化或全氟化的支链或环状烷基，CN; R 2表示5个以上碳原子的脂环基; X表示亚甲基，醚，酯，酰胺或碳酸酯键; R 3表示具有1个或更多个碳原子的直链或支链亚烷基或半或全氟化的直链或支链亚烷基; R 4表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2） （CH 2 CH 2），或半或全氟化脂族基团; R 5表示三氟甲基（CF 3），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2），氟甲基 或半或全氟取代或未取代的脂族基团; n表示1以上的整数， 和OR 12代表OH或选自叔碳酸烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮中的至少一种酸不稳定基团。 还公开了一种图案化衬底的方法，其中该方法包括：将上述光致抗蚀剂组合物施加到衬底上以形成膜; 将膜图案化地曝光到成像辐射源; 和显影区域以形成图案化衬底。

公开(公告)号：US20080038676A1

公开(公告)日：2008-02-14

申请号：US11875223

申请日：2007-10-19

申请人： Wenjie Li ,  Margaret Lawson ,  Pushkara Varanasi

发明人： Wenjie Li ,  Margaret Lawson ,  Pushkara Varanasi

IPC分类号： G03F7/00

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10T428/3154

摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

摘要翻译： 公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。 面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R 1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R 2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 和R 3 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。 面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 顶涂层材料优选可溶于含水碱性显影剂。 面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

公开(公告)号：US20050266354A1

公开(公告)日：2005-12-01

申请号：US10855045

申请日：2004-05-27

申请人： Wenjie Li ,  Margaret Lawson ,  Pushkara Varanasi

发明人： Wenjie Li ,  Margaret Lawson ,  Pushkara Varanasi

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/11 ,  G03F7/20

CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10T428/3154

摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

摘要翻译： 公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。 面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R 1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R 2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 和R 3 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。 面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 顶涂层材料优选可溶于含水碱性显影剂。 面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

公开(公告)号：US20050175928A1

公开(公告)日：2005-08-11

申请号：US10773930

申请日：2004-02-06

申请人： Wenjie Li ,  Pushkara Varanasi ,  Alyssandrea Hamad

发明人： Wenjie Li ,  Pushkara Varanasi ,  Alyssandrea Hamad

IPC分类号： G03F7/004 ,  G03C1/76 ,  G03F7/033 ,  G03F7/038 ,  H01L21/027

CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115

摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; an additive; and a resist polymer derived from at least one first monomer including a hydroxy group. The first monomer may be acidic or approximately pH neutral. The resist polymer may be further derived from a second monomer having an aqueous base soluble moiety. The additive may include one or more alicyclic structures. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a non-crosslinking reaction product that is insoluble in an aqueous alkaline developer solution.

摘要翻译： 负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。 组合物包括：辐射敏感酸发生剂; 添加剂 和衍生自至少一种包含羟基的第一单体的抗蚀剂聚合物。 第一单体可以是酸性的或大致pH中性的。 抗蚀剂聚合物可以进一步衍生自具有碱性水溶性部分的第二单体。 添加剂可以包括一种或多种脂环族结构。 酸产生器适于在暴露于辐射时产生酸。 抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于碱性显影剂水溶液的非交联反应产物。

公开(公告)号：US20050153232A1

公开(公告)日：2005-07-14

申请号：US10753989

申请日：2004-01-08

申请人： Wenjie Li ,  Pushkara Varanasi

发明人： Wenjie Li ,  Pushkara Varanasi

IPC分类号： C08F220/18 ,  C08F220/28 ,  C08F220/38 ,  C08F232/04 ,  G03C1/76 ,  G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

摘要： A positive photoresist composition comprises a radiations sensitive acid generator, and a polymer that may include a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, and a second repeating unit, which may include a pendant acid-labile moiety. The positive photoresist composition may also comprise at least one of a solvent, a quencher, and a surfactant. A patterned photoresist layer, made of the positive photoresist composition, may be formed on a substrate, the positive photoresist layer may be exposed to a pattern of imaging radiation, a portion of the positive photoresist layer that is exposed to the pattern of imaging radiation may be removed to reveal a correspondingly patterned substrate for subsequent processing in the manufacture of a semiconductor device.

摘要翻译： 正性光致抗蚀剂组合物包含辐射敏感性酸产生剂和可以包含衍生自包含氟磺酰胺官能团的磺酰胺单体的第一重复单元的聚合物和可包括侧酸不稳定部分的第二重复单元。 正性光致抗蚀剂组合物还可以包含溶剂，猝灭剂和表面活性剂中的至少一种。 由正型光致抗蚀剂组合物制成的图案化光致抗蚀剂层可以形成在衬底上，正性光致抗蚀剂层可以暴露于成像辐射的图案，暴露于成像辐射图案的正性光致抗蚀剂层的一部分可以 被去除以露出相应图案化的衬底，用于在制造半导体器件中进行后续处理。

公开(公告)号：US20050202339A1

公开(公告)日：2005-09-15

申请号：US10798157

申请日：2004-03-11

申请人： Wenjie Li ,  Pushkara Varanasi

发明人： Wenjie Li ,  Pushkara Varanasi

IPC分类号： G03C1/492

CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/123

摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The composition includes: a radiation sensitive acid generator; a multihydroxy-containing additive; and a resist polymer comprising a first repeating unit from a first monomer. The resist polymer may also comprise a second repeating unit from a second monomer, wherein the second monomer has an aqueous base soluble moiety. The multihydroxy-containing additive has the structure Q-(OH)m, where Q may include at least one alicycic group and m may be any integer between 2 and 6. The acid generator is adapted to generate an acid upon exposure to radiation. The resist polymer is adapted to chemically react with the additive in the presence of the acid to generate a product that is insoluble in a developer solution.

摘要翻译： 负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。 组合物包括：辐射敏感酸发生剂; 多羟基添加剂; 以及包含来自第一单体的第一重复单元的抗蚀剂聚合物。 抗蚀剂聚合物还可以包含来自第二单体的第二重复单元，其中第二单体具有碱性水溶性部分。 多羟基添加剂具有结构Q-（OH）m，其中Q可以包括至少一个脂环族基团，m可以是2和6之间的任何整数。酸产生剂适于产生 暴露于辐射时酸。 抗蚀剂聚合物适于在酸存在下与添加剂发生化学反应以产生不溶于显影剂溶液的产物。

公开(公告)号：US20050227167A1

公开(公告)日：2005-10-13

申请号：US10820117

申请日：2004-04-07

申请人： Wenjie Li ,  Pushkara Varanasi

发明人： Wenjie Li ,  Pushkara Varanasi

IPC分类号： G03C1/492 ,  G03F7/038

CPC分类号： G03F7/0382 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/108 ,  Y10S430/11 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/122

摘要： A negative photoresist composition and a method of patterning a substrate through use of the negative photoresist composition. The negative photoresist composition comprises a radiation sensitive acid generator, a first polymer containing an alkoxymethyl amido group and a hydroxy-containing second polymer. The first and second polymers may also have a repeating unit having an aqueous base soluble moiety. The first and second polymers undergo acid catalyzed crosslinking upon exposure of the acid to radiation, producing a product that is insoluble in an aqueous alkaline developer solution.

摘要翻译： 负性光致抗蚀剂组合物和通过使用负性光致抗蚀剂组合物构图基板的方法。 负性光致抗蚀剂组合物包含辐射敏感性酸产生剂，含有烷氧基甲基酰氨基的第一聚合物和含羟基的第二聚合物。 第一和第二聚合物也可以具有含有碱水溶性部分的重复单元。 第一和第二聚合物在将酸暴露于辐射时经历酸催化交联，产生不溶于碱性显影剂水溶液的产物。

公开(公告)号：US20060216643A1

公开(公告)日：2006-09-28

申请号：US11438842

申请日：2006-05-23

申请人： Wenjie Li ,  Pushkara Varanasi

发明人： Wenjie Li ,  Pushkara Varanasi

IPC分类号： G03C1/76

CPC分类号： G03F7/0397 ,  G03F7/0046 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111

摘要： A positive photoresist composition comprises a radiation sensitive acid generator, and a polymer that includes a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, a second repeating unit having a pendant acid-labile moiety, and a third repeating unit having a lactone functionality. The positive photoresist composition may be used to form patterned features on a substrate, such as those used in the manufacture of a semiconductor device.