公开(公告)号：US07202142B2

公开(公告)日：2007-04-10

申请号：US10838721

申请日：2004-05-03

申请人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Shih-Chang Chen ,  Mong-Song Liang

发明人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Shih-Chang Chen ,  Mong-Song Liang

IPC分类号： H01L21/20

CPC分类号： H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/665 ,  H01L29/78

摘要： A silicon strained channel MOSFET device and method for forming the same the method providing improved wafer throughput and low defect density including the steps of providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane.

摘要翻译： 一种硅应变通道MOSFET器件及其形成方法，该方法提供提供晶片生产能力和低缺陷密度的方法，包括提供硅衬底的步骤; 使用选自乙硅烷，丙硅烷，二氯硅烷和硅烷的至少一种沉积前体外延生长第一硅层; 使用选自乙硅烷和丙硅烷的至少一种沉积前体外延生长阶梯级SiGe缓冲层并使第一硅层接触; 使用至少一种选自乙硅烷和丙硅烷的沉积前体外延生长SiGe覆盖层并使其与阶级SiGe缓冲层接触; 并且使用至少一种选自乙硅烷，丙硅烷，二氯硅烷和硅烷的沉积前体外延生长第二硅层。

公开(公告)号：US06982208B2

公开(公告)日：2006-01-03

申请号：US10838625

申请日：2004-05-03

申请人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Shih-Chang Chen ,  Mong-Song Liang

发明人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Shih-Chang Chen ,  Mong-Song Liang

IPC分类号： H01L21/30

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02052 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/7842

摘要： A method for forming a strained silicon layer device with improved wafer throughput and low defect density including providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane and silane.

摘要翻译： 一种用于形成具有改善的晶片生产量和低缺陷密度的应变硅层器件的方法，包括提供硅衬底; 使用选自乙硅烷和丙硅烷的至少一种沉积前体外延生长第一硅层; 使用选自乙硅烷和丙硅烷的至少一种沉积前体外延生长阶梯级SiGe缓冲层并使第一硅层接触; 使用至少一种选自乙硅烷和丙硅烷的沉积前体外延生长SiGe覆盖层并使其与阶级SiGe缓冲层接触; 以及使用至少一种选自乙硅烷和硅烷的沉积前体外延生长第二硅层。

公开(公告)号：US20050186750A1

公开(公告)日：2005-08-25

申请号：US10785524

申请日：2004-02-24

申请人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Tien-Chih Chang ,  Chia-Lin Chen ,  Shih-Chang Chen ,  Mong-Song Liang

发明人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Tien-Chih Chang ,  Chia-Lin Chen ,  Shih-Chang Chen ,  Mong-Song Liang

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/331 ,  H01L21/8222

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532

摘要： A method for making an improved silicon-germanium layer on a substrate for the base of a heterojunction bipolar transistor is achieved using a two-temperature process. The method involves growing a seed layer at a higher temperature to reduce the grain size with shorter reaction times, and then growing an epitaxial Si—Ge layer with a Si pap layer at a lower temperature to form the intrinsic base with low boron out-diffusion. This results in an HBT having the desired narrow base profile while minimizing the discontinuities (voids) in the Si—Ge layer over the insulator to provide good electrical contacts and uniformity to the intrinsic base.

摘要翻译： 在异质结双极晶体管的基极的基板上制造改进的硅 - 锗层的方法是使用双温工艺实现的。 该方法包括在较高温度下生长种子层以在较短的反应时间下降低晶粒尺寸，然后在较低温度下生长具有Si pap层的外延Si-Ge层以形成具有低硼外扩散的本征碱 。 这导致HBT具有期望的窄基底轮廓，同时最小化绝缘体上的Si-Ge层中的不连续性（空隙），以提供良好的电接触和对本征基底的均匀性。

公开(公告)号：US06911369B2

公开(公告)日：2005-06-28

申请号：US10365257

申请日：2003-02-12

申请人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Fu Chin Yang ,  Shih-Chang Chen ,  Mong-Song Liang

发明人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Fu Chin Yang ,  Shih-Chang Chen ,  Mong-Song Liang

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/331 ,  H01L21/762

CPC分类号： H01L21/32055 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/76232 ,  H01L29/66242

摘要： The present disclosure provides a process for producing a SiGe layer in a bipolar device having a reduced amount of gaps or discontinuities on a shallow trench isolation (STI) region use for a base electrode connection. The process is used for forming an SiGe layer for use in a semiconductor device. The process includes doping a single crystal substrate with a first dopant type, baking the doped single crystal substrate at a temperature less than 900° C., and at a pressure less than 100 torr; and depositing the SiGe layer on the baked single crystal substrate (epi SiGe) to serve as the base electrode and on the STI region (poly SiGe) to serve as a connection for the base electrode. The semiconductor device is thereby created from the combination of the doped single crystal substrate and the deposited SiGe layer.

摘要翻译： 本公开提供了一种用于在双极性器件中制造SiGe层的方法，该双极器件在用于基极连接的浅沟槽隔离（STI）区域上具有减少的间隙或不连续性。 该方法用于形成用于半导体器件的SiGe层。 该方法包括掺杂具有第一掺杂剂类型的单晶衬底，在小于900℃的温度和低于100托的压力下烘焙掺杂的单晶衬底; 以及将SiGe层沉积在焙烧的单晶衬底（epi SiGe）上以用作基极和在STI区（poly SiGe）上作为基极的连接。 由此，由掺杂的单晶衬底和沉积的SiGe层的组合形成半导体器件。

公开(公告)号：US20050245058A1

公开(公告)日：2005-11-03

申请号：US10838625

申请日：2004-05-03

申请人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Shih-Chang Chen ,  Mong-Song Liang

发明人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Shih-Chang Chen ,  Mong-Song Liang

IPC分类号： C30B1/00 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/306 ,  H01L21/36 ,  H01L21/44

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B29/52 ,  H01L21/02052 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/7842

摘要： A method for forming a strained silicon layer device with improved wafer throughput and low defect density including providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane and silane.

摘要翻译： 一种用于形成具有改善的晶片生产量和低缺陷密度的应变硅层器件的方法，包括提供硅衬底; 使用选自乙硅烷和丙硅烷的至少一种沉积前体外延生长第一硅层; 使用选自乙硅烷和丙硅烷的至少一种沉积前体外延生长阶梯级SiGe缓冲层并使第一硅层接触; 使用至少一种选自乙硅烷和丙硅烷的沉积前体外延生长SiGe覆盖层并使其与阶级SiGe缓冲层接触; 以及使用至少一种选自乙硅烷和硅烷的沉积前体外延生长第二硅层。

公开(公告)号：US06936530B1

公开(公告)日：2005-08-30

申请号：US10772939

申请日：2004-02-05

申请人： Liang-Gi Yao ,  Kuen-Chyr Lee ,  Shih-Chang Chen ,  Mong-Song Liang

发明人： Liang-Gi Yao ,  Kuen-Chyr Lee ,  Shih-Chang Chen ,  Mong-Song Liang

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/331

CPC分类号： H01L29/66242 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/918

摘要： A method of forming an Si—Ge epitaxial layer comprising the following steps. A structure is provided and a doped Si—Ge seed layer is formed thereover. The doped Si—Ge seed layer having increased nucleation sites. A Si—Ge epitaxial layer upon the doped Si—Ge seed layer whereby the Si—Ge epitaxial layer lacks discontinuity.

摘要翻译： 一种形成Si-Ge外延层的方法，包括以下步骤。 提供一种结构，并在其上形成掺杂的Si-Ge种子层。 掺杂的Si-Ge种子层具有增加的成核位点。 在掺杂Si-Ge晶种层上的Si-Ge外延层，由此Si-Ge外延层缺少不连续性。

公开(公告)号：US07012009B2

公开(公告)日：2006-03-14

申请号：US10785524

申请日：2004-02-24

申请人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Tien-Chih Chang ,  Chia-Lin Chen ,  Shih-Chang Chen ,  Mong-Song Liang

发明人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Tien-Chih Chang ,  Chia-Lin Chen ,  Shih-Chang Chen ,  Mong-Song Liang

IPC分类号： H01L21/331

CPC分类号： H01L29/66242 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532

摘要： A method for making an improved silicon-germanium layer on a substrate for the base of a heterojunction bipolar transistor is achieved using a two-temperature process. The method involves growing a seed layer at a higher temperature to reduce the grain size with shorter reaction times, and then growing an epitaxial Si—Ge layer with a Si cap layer at a lower temperature to form the intrinsic base with low boron out-diffusion. This results in an HBT having the desired narrow base profile while minimizing the discontinuities (voids) in the Si—Ge layer over the insulator to provide good electrical contacts and uniformity to the intrinsic base.

摘要翻译： 在异质结双极晶体管的基极的基板上制造改进的硅 - 锗层的方法是使用双温工艺实现的。 该方法包括在更高的温度下生长种子层以在较短的反应时间下降低晶粒尺寸，然后在较低温度下生长具有Si覆盖层的外延Si-Ge层以形成具有低硼外扩散的本征碱 。 这导致HBT具有期望的窄基底轮廓，同时最小化绝缘体上的Si-Ge层中的不连续性（空隙），以提供良好的电接触和对本征基底的均匀性。

公开(公告)号：US20050245035A1

公开(公告)日：2005-11-03

申请号：US10838721

申请日：2004-05-03

申请人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Shih-Chang Chen ,  Mong-Song Liang

发明人： Kuen-Chyr Lee ,  Liang-Gi Yao ,  Shih-Chang Chen ,  Mong-Song Liang

IPC分类号： H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L29/1054 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/665 ,  H01L29/78

摘要： A silicon strained channel MOSFET device and method for forming the same the method providing improved wafer throughput and low defect density including the steps of providing a silicon substrate; epitaxially growing a first silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane; epitaxially growing a step-grade SiGe buffer layer over and contacting the first silicon layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; epitaxially growing a SiGe capping layer over and contacting the step-grade SiGe buffer layer using at least one deposition precursor selected from the group consisting of disilane and trisilane; and, epitaxially growing a second silicon layer using at least one deposition precursor selected from the group consisting of disilane, trisilane, dichlorosilane, and silane.

摘要翻译： 一种硅应变通道MOSFET器件及其形成方法，该方法提供提供晶片生产能力和低缺陷密度的方法，包括提供硅衬底的步骤; 使用选自乙硅烷，丙硅烷，二氯硅烷和硅烷的至少一种沉积前体外延生长第一硅层; 使用选自乙硅烷和丙硅烷的至少一种沉积前体外延生长阶梯级SiGe缓冲层并使第一硅层接触; 使用至少一种选自乙硅烷和丙硅烷的沉积前体外延生长SiGe覆盖层并使其与阶级SiGe缓冲层接触; 并且使用至少一种选自乙硅烷，丙硅烷，二氯硅烷和硅烷的沉积前体外延生长第二硅层。

公开(公告)号：US20050176229A1

公开(公告)日：2005-08-11

申请号：US10772939

申请日：2004-02-05

申请人： Liang-Gi Yao ,  Kuen-Chyr Lee ,  Shih-Chang Chen ,  Mong-Song Liang

发明人： Liang-Gi Yao ,  Kuen-Chyr Lee ,  Shih-Chang Chen ,  Mong-Song Liang

IPC分类号： H01L21/28 ,  H01L21/3205 ,  H01L21/331

CPC分类号： H01L29/66242 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S438/918

摘要： A method of forming an Si—Ge epitaxial layer comprising the following steps. A structure is provided and a doped Si—Ge seed layer is formed thereover. The doped Si—Ge seed layer having increased nucleation sites. A Si—Ge epitaxial layer upon the doped Si—Ge seed layer whereby the Si—Ge epitaxial layer lacks discontinuity.

摘要翻译： 一种形成Si-Ge外延层的方法，包括以下步骤。 提供一种结构，并在其上形成掺杂的Si-Ge种子层。 掺杂的Si-Ge种子层具有增加的成核位点。 在掺杂Si-Ge晶种层上的Si-Ge外延层，由此Si-Ge外延层缺少不连续性。

公开(公告)号：US20070240826A1

公开(公告)日：2007-10-18

申请号：US11405618

申请日：2006-04-18

申请人： Liang-Gi Yao ,  Chia-Lin Chen ,  Ming-Feng Wang ,  Ming-Feng Yoo ,  Kuen-Chyr Lee ,  Shih-Chang Chen

发明人： Liang-Gi Yao ,  Chia-Lin Chen ,  Ming-Feng Wang ,  Ming-Feng Yoo ,  Kuen-Chyr Lee ,  Shih-Chang Chen

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： H01L21/67069

摘要： A gas supply device, including: a first source of an inert carrier gas, communicated with a first pipeline; a second source of anhydrous reactive gas, communicated with a second pipeline; a third source of enabling chemical gas of an enabling chemical compound, communicated with a third pipeline; a main pipeline, communicated with the first, second, and third pipelines; and a temperature controller, located on the second pipeline.

摘要翻译： 一种气体供应装置，包括：与第一管道连通的惰性载气的第一源; 与第二管道连通的第二无水反应气源; 与第三管道连通的使能化学化合物化学气体的第三个来源; 一条主要管道，与第一条，第二条和第三条管道通信; 和位于第二管道上的温度控制器。