公开(公告)号：US5585304A

公开(公告)日：1996-12-17

申请号：US293415

申请日：1994-08-02

申请人： Yutaka Hayashi ,  Kunihiro Takahashi ,  Hiroaki Takasu ,  Yoshikazu Kojima ,  Hitoshi Niwa ,  Nobuyoshi Matsuyama ,  Yomoyuki Yoshino ,  Masaaki Kamiya

发明人： Yutaka Hayashi ,  Kunihiro Takahashi ,  Hiroaki Takasu ,  Yoshikazu Kojima ,  Hitoshi Niwa ,  Nobuyoshi Matsuyama ,  Yomoyuki Yoshino ,  Masaaki Kamiya

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/30 ,  H01L21/762 ,  H01L21/302

CPC分类号： H01L21/76251 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/148 ,  Y10S438/977

摘要： A semiconductor wafer is comprised of a transparent layer interposed between a thin silicon layer and a thick silicon layer. Silicon islands are formed from the thin silicon layer on the transparent layer. Device elements are formed in the silicon islands. Thereafter, the thick silicon layer which is a support layer is etched away to form a transparent region on the wafer. The wafer is constructed to avoid elimination or destruction of the transparent layer during the course of formation of the silicon islands and during the course of etching of the rear thick silicon plate. The transparent layer is comprised of a silicon nitride film or a silicon carbide film. Alternatively, the transparent layer is comprised of a silicon oxide film covered by a silicon nitride film or a silicon carbide film on one or both of the upper and lower faces of the silicon oxide film.

摘要翻译： 半导体晶片由介于薄硅层和厚硅层之间的透明层构成。 硅岛由透明层上的薄硅层形成。 器件元件形成在硅岛中。 此后，作为支撑层的厚硅层被蚀刻掉以在晶片上形成透明区域。 构造晶片以避免在形成硅岛的过程中和在后厚硅板的蚀刻过程中消除或破坏透明层。 透明层由氮化硅膜或碳化硅膜构成。 或者，透明层由在氧化硅膜的上表面和下表面的一个或两个上由氮化硅膜或碳化硅膜覆盖的氧化硅膜构成。

公开(公告)号：US5486708A

公开(公告)日：1996-01-23

申请号：US264635

申请日：1994-06-23

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US5572045A

公开(公告)日：1996-11-05

申请号：US460538

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： Herein disclosed are a semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film formed integrally with transistor elements is laminated on an insulating thin film and is formed with through holes and in which the insulating thin film is formed on its back with electrodes and a shielding film, and a light valve device using the semiconductor device. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate, which is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film, and a transparent opposite substrate, so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 这里公开了具有双面布线结构的半导体器件，其中与绝缘薄膜层叠与晶体管元件一体形成的单晶半导体薄膜并形成有通孔，并且其中形成绝缘薄膜 其背面具有电极和屏蔽膜，以及使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在形成有电极的多层基板和通过绝缘膜形成有分组元件的一侧的绝缘膜的相对侧的屏蔽膜之间设置电光物质， 透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US5728591A

公开(公告)日：1998-03-17

申请号：US460536

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof. Thereafter, the metal film is removed to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes. A substrate is then arranged opposite to the transparent insulating thin film to define a gap therebetween, and an electrooptical material is disposed in the gap.

摘要翻译： 一种制造光阀装置的方法包括在半导体衬底的表面上形成透明绝缘薄膜层，并在透明绝缘薄膜层的表面上形成单晶半导体薄膜。 然后去除单晶半导体薄膜的一部分，并且在去除了单晶半导体薄膜的区域上，在透明绝缘薄膜层上形成至少一个像素电极。 然后在单晶半导体薄膜中形成驱动单元。 此后，在对应于像素电极和驱动单元的区域，在半导体衬底的表面上使用粘合剂层叠载体衬底。 然后去除半导体衬底以暴露透明绝缘薄膜层的表面，并且在其暴露表面上形成通孔和金属膜。 此后，去除金属膜以形成遮光层，用于覆盖由驱动单元占据的透明绝缘薄膜层的至少一部分区域，并形成用于通过贯通孔连接到驱动单元的电极焊盘， 孔。 然后将衬底布置成与透明绝缘薄膜相对以在其间形成间隙，并且在该间隙中设置电光材料。

公开(公告)号：US5618739A

公开(公告)日：1997-04-08

申请号：US459834

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： C25F3/04 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84

CPC分类号： G02F1/13454 ,  C25F3/04 ,  H01L21/76264 ,  H01L27/1214 ,  H01L29/66772 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363

摘要： A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.

摘要翻译： 一种制造半导体器件的方法包括：通过在临时硅衬底的表面上沉积二氧化硅绝缘膜来形成SOI衬底，将绝缘膜的表面上的单晶硅的半导体衬底热粘合，并且研磨半导体 衬底以形成单晶半导体薄膜。 然后在单晶半导体薄膜中形成半导体集成电路。 此后，支撑基板以与临时基板相对的半导体集成电路的表面面对面的方式固定地粘接。 然后移除临时衬底以暴露绝缘膜的表面。 然后对绝缘膜的暴露表面进行至少包括形成电极的处理。

公开(公告)号：US5347154A

公开(公告)日：1994-09-13

申请号：US791912

申请日：1991-11-13

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L27/01 ,  H01L27/13

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US4540909A

公开(公告)日：1985-09-10

申请号：US594536

申请日：1984-03-29

申请人： Kunihiro Takahashi ,  Nobuyoshi Matsuyama

发明人： Kunihiro Takahashi ,  Nobuyoshi Matsuyama

IPC分类号： H03H9/215 ,  H01L41/08

CPC分类号： H03H9/215

摘要： A tuning fork type quartz crystal resonator using a coupling between the fundamental flexural and fundamental torsional modes of vibration. The resonator has a base and two tuning fork arms extending from the base. The length of the base is larger than that of the tuning fork arms. The base has a narrow width portion effective to lower the vibrating displacements of the base end according to the torsional mode.

摘要翻译： 音叉式石英晶体谐振器，使用基本的弯曲和基本扭转振动模式之间的耦合。 谐振器具有从底座延伸的底座和两个音叉臂。 基座的长度大于音叉臂的长度。 基座具有窄的宽度部分，其有效地根据扭转模式降低基端的振动位移。

公开(公告)号：US20110070464A1

公开(公告)日：2011-03-24

申请号：US12952957

申请日：2010-11-23

申请人： Tsukasa MATSUDA ,  Eizo Kurihara ,  Shoji Yamaguchi ,  Kunihiro Takahashi ,  Mario Fuse ,  Tomofumi Tokiyoshi

发明人： Tsukasa MATSUDA ,  Eizo Kurihara ,  Shoji Yamaguchi ,  Kunihiro Takahashi ,  Mario Fuse ,  Tomofumi Tokiyoshi

IPC分类号： G11B5/62

CPC分类号： G11B5/70 ,  Y10T428/31703 ,  Y10T428/31993

摘要： A recording medium includes a magnetic material and a pulp-fiber, a minimum value of shortest distances between the magnetic material and an edge of the recording medium substantially parallel to the pulp-fiber orientation direction being about 1 mm or more.

摘要翻译： 记录介质包括磁性材料和纸浆纤维，磁性材料与基本上平行于纸浆纤维取向方向的记录介质的边缘之间的最短距离的最小值为约1mm以上。

公开(公告)号：US07896251B2

公开(公告)日：2011-03-01

申请号：US11272967

申请日：2005-11-15

申请人： Shoji Yamaguchi ,  Mario Fuse ,  Kunihiro Takahashi

发明人： Shoji Yamaguchi ,  Mario Fuse ,  Kunihiro Takahashi

IPC分类号： G06K19/06

CPC分类号： G06K19/06187 ,  G06K7/083

摘要： An information reading apparatus has an excitation unit that applies a magnetic field to a medium provided with at least one magnetic element that generates a signal when the magnetic field is applied thereto and a pseudo element that generates no signal when the magnetic field is applied thereto; a detection unit that detects a signal when the signal is generated; and an identification unit that identifies the medium based on a result of the detection.

摘要翻译： 一种信息读取装置，具有向施加有磁场的至少一个产生信号的磁性元件的介质和在施加磁场时不产生信号的伪元件施加磁场的激励单元; 检测单元，其在生成所述信号时检测信号; 以及基于所述检测结果来识别所述介质的识别单元。

公开(公告)号：US07834739B2

公开(公告)日：2010-11-16

申请号：US12076337

申请日：2008-03-17

申请人： Shoji Yamaguchi ,  Mario Fuse ,  Yasunori Koda ,  Kunihiro Takahashi ,  Hiroyoshi Inoue ,  Tsukasa Matsuda

发明人： Shoji Yamaguchi ,  Mario Fuse ,  Yasunori Koda ,  Kunihiro Takahashi ,  Hiroyoshi Inoue ,  Tsukasa Matsuda

IPC分类号： B60R25/00 ,  G06F7/04 ,  G06F7/00

CPC分类号： G01R33/02

摘要： A baggage management gate includes a first reading device and a second reading device, a detecting device, a determining unit, a first opening and closing device and a second opening and closing device. The baggage management gate manages baggage that is restricted to be carried in or out from a predetermined region. And in order away from the region in which the baggage is managed, the first reading device, the second opening and closing device, the detecting device for both the first person and the second person, the first opening and closing device, and the second reading device are arranged in an entrance direction from the passage to the management region in which the baggage is managed.

摘要翻译： 行李管理门包括第一读取装置和第二读取装置，检测装置，确定装置，第一打开和关闭装置以及第二打开和关闭装置。 行李管理门管理被限制在预定区域内进出的行李。 并且为了远离管理行李的区域，第一读取装置，第二打开和关闭装置，用于第一人和第二人的检测装置，第一打开和关闭装置以及第二读取 设备沿着通道行进管理区域的入口方向排列。