公开(公告)号：US5486708A

公开(公告)日：1996-01-23

申请号：US264635

申请日：1994-06-23

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US5572045A

公开(公告)日：1996-11-05

申请号：US460538

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： Herein disclosed are a semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film formed integrally with transistor elements is laminated on an insulating thin film and is formed with through holes and in which the insulating thin film is formed on its back with electrodes and a shielding film, and a light valve device using the semiconductor device. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate, which is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film, and a transparent opposite substrate, so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 这里公开了具有双面布线结构的半导体器件，其中与绝缘薄膜层叠与晶体管元件一体形成的单晶半导体薄膜并形成有通孔，并且其中形成绝缘薄膜 其背面具有电极和屏蔽膜，以及使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在形成有电极的多层基板和通过绝缘膜形成有分组元件的一侧的绝缘膜的相对侧的屏蔽膜之间设置电光物质， 透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US5728591A

公开(公告)日：1998-03-17

申请号：US460536

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A process for manufacturing a light valve device comprises forming a transparent insulating thin film layer on a surface of a semiconductor substrate, and forming a single crystal semiconductor thin film on a surface of the transparent insulating thin film layer. A portion of the single crystal semiconductor thin film is then removed and at least one pixel electrode is formed on the transparent insulating thin film layer at a region where the single crystal semiconductor thin film has been removed. A driving unit is then formed in the single crystal semiconductor thin film. Thereafter, a carrier substrate is laminated using an adhesive on the surface of the semiconductor substrate at a region corresponding to the pixel electrode and the driving unit. The semiconductor substrate is then removed to expose a surface of the transparent insulating thin film layer and through-holes and a metal film are formed on the exposed surface thereof. Thereafter, the metal film is removed to form a light shielding layer for covering at least a portion of a region of the transparent insulating thin film layer occupied by the driving unit and to form an electrode pad for connection to the driving unit through the through-holes. A substrate is then arranged opposite to the transparent insulating thin film to define a gap therebetween, and an electrooptical material is disposed in the gap.

摘要翻译： 一种制造光阀装置的方法包括在半导体衬底的表面上形成透明绝缘薄膜层，并在透明绝缘薄膜层的表面上形成单晶半导体薄膜。 然后去除单晶半导体薄膜的一部分，并且在去除了单晶半导体薄膜的区域上，在透明绝缘薄膜层上形成至少一个像素电极。 然后在单晶半导体薄膜中形成驱动单元。 此后，在对应于像素电极和驱动单元的区域，在半导体衬底的表面上使用粘合剂层叠载体衬底。 然后去除半导体衬底以暴露透明绝缘薄膜层的表面，并且在其暴露表面上形成通孔和金属膜。 此后，去除金属膜以形成遮光层，用于覆盖由驱动单元占据的透明绝缘薄膜层的至少一部分区域，并形成用于通过贯通孔连接到驱动单元的电极焊盘， 孔。 然后将衬底布置成与透明绝缘薄膜相对以在其间形成间隙，并且在该间隙中设置电光材料。

公开(公告)号：US5618739A

公开(公告)日：1997-04-08

申请号：US459834

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： C25F3/04 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84

CPC分类号： G02F1/13454 ,  C25F3/04 ,  H01L21/76264 ,  H01L27/1214 ,  H01L29/66772 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363

摘要： A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.

摘要翻译： 一种制造半导体器件的方法包括：通过在临时硅衬底的表面上沉积二氧化硅绝缘膜来形成SOI衬底，将绝缘膜的表面上的单晶硅的半导体衬底热粘合，并且研磨半导体 衬底以形成单晶半导体薄膜。 然后在单晶半导体薄膜中形成半导体集成电路。 此后，支撑基板以与临时基板相对的半导体集成电路的表面面对面的方式固定地粘接。 然后移除临时衬底以暴露绝缘膜的表面。 然后对绝缘膜的暴露表面进行至少包括形成电极的处理。

公开(公告)号：US5347154A

公开(公告)日：1994-09-13

申请号：US791912

申请日：1991-11-13

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L27/01 ,  H01L27/13

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US20090008759A1

公开(公告)日：2009-01-08

申请号：US12215168

申请日：2008-06-25

申请人： Tomoyuki Yoshino

发明人： Tomoyuki Yoshino

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H05K3/3426 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K2201/10689 ,  H05K2201/10795 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00

摘要： Provided is a semiconductor device having an element covered with a resin mold and a metal lead protruding from the resin mold in which a lead-tip portion thereof is entirely covered by solder plating and in which a lead-tip end surface, which is not covered by solder plating, has an area less than half of a cross-sectional area of the metal lead, whereby solder wettability of the metal lead is improved and a bonding strength to a circuit board is also improved.

摘要翻译： 提供一种半导体器件，其具有被树脂模具覆盖的元件和从树脂模具突出的金属引线，其中引线顶端部分被焊接电镀完全覆盖，并且其中未覆盖的引线端面表面 通过焊料镀覆，具有小于金属引线横截面面积的一半的面积，从而提高了金属引线的焊料润湿性，并且还提高了与电路板的接合强度。

公开(公告)号：US5763903A

公开(公告)日：1998-06-09

申请号：US516234

申请日：1995-08-17

申请人： Masaaki Mandai ,  Tomoyuki Yoshino ,  Tadao Akamine ,  Yutaka Saitoh ,  Junko Yamanaka ,  Osamu Koseki

发明人： Masaaki Mandai ,  Tomoyuki Yoshino ,  Tadao Akamine ,  Yutaka Saitoh ,  Junko Yamanaka ,  Osamu Koseki

IPC分类号： H01L27/144 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/107 ,  H01L31/0328

CPC分类号： H01L31/0203 ,  H01L27/1443 ,  H01L27/1464 ,  H01L31/107 ,  H01L2224/73265 ,  H01L2924/01322 ,  H01L2924/10158

摘要： An avalanche photodiode for detecting x-rays and other radiation comprises a first substrate having a portion removed therefrom, a first insulating film formed on the first substrate, a second substrate comprising a floating zone silicon semiconductor substrate disposed on the first insulating film, an impurity region selectively formed in the second substrate at a surface corresponding to the removed portion, a PN junction formed on the second substrate, a glass substrate mounted to the second substrate, a first electrode formed on the first substrate for applying a voltage to the impurity region, a second electrode formed on the second substrate for applying a voltage to the second substrate, a third electrode formed on the glass substrate and electrically connected to the second electrode, and an integrated circuit package having a lead pin connected to the third electrode. Accordingly, a shallow depletion layer may be provided on a floating zone SOI substrate. The substrates may be joined to the glass substrate using a eutectic bonding process.

摘要翻译： 用于检测X射线和其它辐射的雪崩光电二极管包括：第一衬底，其具有从其中去除的部分;第一绝缘膜，形成在第一衬底上;第二衬底，包括布置在第一绝缘膜上的浮动区硅半导体衬底， 在与第二基板对应的表面上选择性地形成在第二基板上的区域，形成在第二基板上的PN结，安装到第二基板的玻璃基板，形成在第一基板上的用于向杂质区域施加电压的第一电极 形成在第二基板上的用于向第二基板施加电压的第二电极，形成在玻璃基板上并电连接到第二电极的第三电极，以及具有连接到第三电极的引脚的集成电路封装。 因此，可以在浮动区域SOI衬底上提供浅耗尽层。 可以使用共晶接合工艺将基板连接到玻璃基板。

公开(公告)号：US5977575A

公开(公告)日：1999-11-02

申请号：US54074

申请日：1993-04-27

申请人： Masaaki Mandai ,  Hitoshi Takeuchi ,  Yutaka Saito ,  Tomoyuki Yoshino

发明人： Masaaki Mandai ,  Hitoshi Takeuchi ,  Yutaka Saito ,  Tomoyuki Yoshino

IPC分类号： H01L21/98 ,  H01L23/538 ,  H01L25/18 ,  H01L27/148

CPC分类号： H01L25/50 ,  H01L23/5381 ,  H01L23/5385 ,  H01L25/18 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/01322 ,  H01L2924/10253

摘要： The semiconductor image sensor device of the multiple chip mount type is constructed such that electrical and mechanical connections are carried out concurrently among chips. Coupling chips 4 are utilized to couple a plurality of semiconductor image sensor chips 1 with each other, and the couple one semiconductor image sensor chip 1 to a driver substrate 3 which mounts thereon a semiconductor driving chip 2 for driving the semiconductor image sensor chips 1.

摘要翻译： 多芯片安装型的半导体图像传感器装置被构造成使得在芯片之间同时进行电气和机械连接。 耦合芯片4用于将多个半导体图像传感器芯片1彼此耦合，并且将一个半导体图像传感器芯片1耦合到驱动器基板3，驱动器基板3上安装用于驱动半导体图像传感器芯片1的半导体驱动芯片2。

公开(公告)号：US5869893A

公开(公告)日：1999-02-09

申请号：US816195

申请日：1997-03-12

申请人： Osamu Koseki ,  Takichi Ishii ,  Masaaki Mandai ,  Tomoyuki Yoshino ,  Hitoshi Takeuchi

发明人： Osamu Koseki ,  Takichi Ishii ,  Masaaki Mandai ,  Tomoyuki Yoshino ,  Hitoshi Takeuchi

IPC分类号： H01L21/98 ,  H01L23/538 ,  H01L23/34

CPC分类号： H01L25/50 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L2224/04105 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/24227 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73267 ,  H01L2224/92 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15153 ,  Y10S438/94

摘要： A semiconductor device comprises at least two semiconductor elements connected together at a connecting region of the semiconductor elements. At least one joint chip is adhered to the connection region of the semiconductor elements for connecting the semiconductor elements together. The joint chip has a trapezoidal cross-section defining a first surface and a second surface wider than the first surface. The second surface of the joint chip is adhered to the connection region of the semiconductor elements.

摘要翻译： 半导体器件包括在半导体元件的连接区域处连接在一起的至少两个半导体元件。 至少一个接合芯片粘附到用于将半导体元件连接在一起的半导体元件的连接区域。 接头芯片具有限定第一表面和比第一表面更宽的第二表面的梯形横截面。 接头芯片的第二表面粘附到半导体元件的连接区域。

公开(公告)号：US07786556B2

公开(公告)日：2010-08-31

申请号：US12215168

申请日：2008-06-25

申请人： Tomoyuki Yoshino

发明人： Tomoyuki Yoshino

IPC分类号： H01L21/00

CPC分类号： H05K3/3426 ,  H01L23/49582 ,  H01L2924/0002 ,  H05K2201/10689 ,  H05K2201/10795 ,  H05K2201/10909 ,  Y02P70/613 ,  H01L2924/00

摘要： A semiconductor device has an element encapsulated in a resin mold. Metal leads protruding from the resin mold are solder plated except at the lead-tip end surfaces, and the exposed lead-tip end surfaces have an area less than half the cross-sectional area of the protruding metal leads. The semiconductor device is manufactured using a lead frame in which the metal leads are connected to a frame by plating bars having a thickness smaller than half the thickness of the metal leads. In another embodiment, the metal leads are connected to the frame by plating bars that extend sideways from the metal leads, and the end tips of the metal leads are entirely covered with plating to improve soldering wettability.

摘要翻译： 半导体器件具有封装在树脂模具中的元件。 从树脂模具突出的金属引线除了铅尖端面以外是焊料镀覆的，露出的引线前端端面的面积小于突出金属引线的横截面面积的一半。 使用引线框架制造半导体器件，其中金属引线通过具有小于金属引线厚度的一半厚度的电镀棒连接到框架。 在另一个实施例中，金属引线通过从金属引线横向延伸的电镀棒连接到框架，并且金属引线的端部末端被电镀覆盖以提高焊接润湿性。