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    Display device, device for driving the display device and method of driving the display device
    5.
    发明授权
    Display device, device for driving the display device and method of driving the display device 有权
    显示装置，用于驱动显示装置的装置和驱动显示装置的方法

    公开(公告)号：US07633088B2

    公开(公告)日：2009-12-15

    申请号：US11553798

    申请日：2006-10-27

    申请人： Parikh Kunjal ,  Byung-Sik Koh ,  Beohm-Rock Choi ,  Joon-Hoo Choi ,  Joon-Chul Goh

    发明人： Parikh Kunjal ,  Byung-Sik Koh ,  Beohm-Rock Choi ,  Joon-Hoo Choi ,  Joon-Chul Goh

    IPC分类号： H01L27/14

    CPC分类号： G09G3/3233 ,  G09G2300/0842 ,  G09G2310/06 ,  G09G2320/0214 ,  G09G2320/0219

    摘要： A display device including a plurality of pixels is disclosed. Each of the pixels includes a switching transistor, a plurality of scanning lines connected to the switching transistors and a plurality of data lines connected to the switching transistors. The scanning lines transmit a gate turn-on voltage that turns on the switching transistors and a gate turn-off voltage that turns off the switching transistors and the data lines transmit a data voltage. The gate turn-on voltage is determined based on a maximum value of the data voltage. The gate turn-on voltage based on the maximum value of the data voltage results in high luminance and less crosstalk phenomenon.

    摘要翻译： 公开了一种包括多个像素的显示装置。 每个像素包括开关晶体管，连接到开关晶体管的多条扫描线和连接到开关晶体管的多条数据线。 扫描线传输导通开关晶体管的栅极导通电压和关断开关晶体管的栅极截止电压，并且数据线传输数据电压。 基于数据电压的最大值来确定栅极导通电压。 基于数据电压的最大值的栅极导通电压导致高亮度和较少的串扰现象。

    Thin film transistor, thin film transistor panel, and method of manufacturing the same
    6.
    发明授权
    Thin film transistor, thin film transistor panel, and method of manufacturing the same 有权
    薄膜晶体管，薄膜晶体管面板及其制造方法

    公开(公告)号：US07935578B2

    公开(公告)日：2011-05-03

    申请号：US11375714

    申请日：2006-03-13

    申请人： Joon-Hoo Choi ,  Joon-Chul Goh ,  Beohm-Rock Choi

    发明人： Joon-Hoo Choi ,  Joon-Chul Goh ,  Beohm-Rock Choi

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L27/1296 ,  H01L29/04

    摘要： The present invention relates to a TFT, a TFT array panel, and a method of manufacturing the TFT array panel. A method of manufacturing the TFT array panel includes the steps of forming a first electrode and a second electrode that are separated from each other on a substrate, forming a silicon layer including amorphous silicon and polycrystalline silicon on the substrate, forming a semiconductor by patterning the silicon layer, forming a gate insulating layer on the semiconductor, forming a third electrode that is opposite to the semiconductor on the gate insulating layer, forming a passivation layer on the third electrode, and forming a pixel electrode on the passivation layer. The TFT array panel has high mobility because the TFT include polycrystalline silicon at the channel region of the TFT.

    摘要翻译： 本发明涉及TFT，TFT阵列面板以及制造TFT阵列面板的方法。 制造TFT阵列面板的方法包括以下步骤：在衬底上形成彼此分离的第一电极和第二电极，在衬底上形成包括非晶硅和多晶硅的硅层，通过图案化形成半导体 在所述半导体上形成栅极绝缘层，形成与所述栅极绝缘层上的所述半导体相对的第三电极，在所述第三电极上形成钝化层，以及在所述钝化层上形成像素电极。 TFT阵列面板具有高迁移率，因为TFT在TFT的沟道区域包括多晶硅。

    Display device and method of manufacturing the same
    7.
    发明授权
    Display device and method of manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US07772764B2

    公开(公告)日：2010-08-10

    申请号：US11553869

    申请日：2006-10-27

    申请人： Joon-Chul Goh ,  Beohm-Rock Choi ,  Jung-Soo Rhee ,  Joon-Hoo Choi ,  Kwang-Chul Jung

    发明人： Joon-Chul Goh ,  Beohm-Rock Choi ,  Jung-Soo Rhee ,  Joon-Hoo Choi ,  Kwang-Chul Jung

    IPC分类号： H01J1/62

    CPC分类号： H01L27/3276 ,  H01L51/5203

    摘要： A display device and a method of manufacturing the display device are provided. The display device includes a substrate; a driving voltage line disposed on the substrate; a driving voltage line pad to transmit a driving voltage to the driving voltage line; a driving transistor connected to the driving voltage line; a pixel electrode connected to the driving transistor; a common electrode opposing the pixel electrode; a light emitting member disposed between the pixel electrode and the common electrode; and a common electrode pad disposed on the substrate so as to transmit a common voltage to the common electrode. The common electrode pad and the driving voltage line pad are exposed at a side surface of the substrate.

    摘要翻译： 提供了显示装置和制造显示装置的方法。 显示装置包括：基板; 设置在所述基板上的驱动电压线; 用于向驱动电压线传输驱动电压的驱动电压线焊盘; 连接到驱动电压线的驱动晶体管; 连接到驱动晶体管的像素电极; 与像素电极相对的公共电极; 设置在像素电极和公共电极之间的发光部件; 以及设置在所述基板上以将公共电压传输到所述公共电极的公共电极焊盘。 公共电极焊盘和驱动电压线焊盘在基板的侧面露出。

    Display device and driving method thereof
    8.
    发明申请
    Display device and driving method thereof 审中-公开
    显示装置及其驱动方法

    公开(公告)号：US20060238461A1

    公开(公告)日：2006-10-26

    申请号：US11408278

    申请日：2006-04-19

    申请人： Joon-Chul Goh ,  Joon-Hoo Choi ,  Beohm-Rock Choi

    发明人： Joon-Chul Goh ,  Joon-Hoo Choi ,  Beohm-Rock Choi

    IPC分类号： G09G3/30

    CPC分类号： G09G3/3233 ,  G09G3/3291 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2310/0262 ,  G09G2320/043

    摘要： A display device includes a light emitting element connected to a common voltage, a driving transistor having a control terminal, an output terminal connected to the light emitting element, and an input terminal connected to a driving voltage, a first capacitor connected to the control terminal of the driving transistor, and a first switching transistor configured to transmit a data signal to the first capacitor. A first voltage is applied to the control terminal of the driving transistor, and a second voltage different from the first voltage and the driving voltage is applied to the output terminal of the driving transistor.

    摘要翻译： 显示装置包括连接到公共电压的发光元件，具有控制端子的驱动晶体管，连接到发光元件的输出端子和连接到驱动电压的输入端子，连接到控制端子的第一电容器 以及配置成将数据信号发送到第一电容器的第一开关晶体管。 第一电压被施加到驱动晶体管的控制端，并且不同于第一电压和驱动电压的第二电压被施加到驱动晶体管的输出端。

    Thin film transistor, thin film transistor panel, and method of manufacturing the same
    9.
    发明申请
    Thin film transistor, thin film transistor panel, and method of manufacturing the same 有权
    薄膜晶体管，薄膜晶体管面板及其制造方法

    公开(公告)号：US20060202204A1

    公开(公告)日：2006-09-14

    申请号：US11375714

    申请日：2006-03-13

    申请人： Joon-Hoo Choi ,  Joon-Chul Goh ,  Beohm-Rock Choi

    发明人： Joon-Hoo Choi ,  Joon-Chul Goh ,  Beohm-Rock Choi

    IPC分类号： H01L29/04 ,  H01L21/84

    CPC分类号： H01L27/1296 ,  H01L29/04

    摘要： The present invention relates to a TFT, a TFT array panel, and a method of manufacturing the TFT array panel. A method of manufacturing the TFT array panel includes the steps of forming a first electrode and a second electrode that are separated from each other on a substrate, forming a silicon layer including amorphous silicon and polycrystalline silicon on the substrate, forming a semiconductor by patterning the silicon layer, forming a gate insulating layer on the semiconductor, forming a third electrode that is opposite to the semiconductor on the gate insulating layer, forming a passivation layer on the third electrode, and forming a pixel electrode on the passivation layer. The TFT array panel has high mobility because the TFT include polycrystalline silicon at the channel region of the TFT.

    摘要翻译： 本发明涉及TFT，TFT阵列面板以及制造TFT阵列面板的方法。 制造TFT阵列面板的方法包括以下步骤：在衬底上形成彼此分离的第一电极和第二电极，在衬底上形成包括非晶硅和多晶硅的硅层，通过图案化形成半导体 在所述半导体上形成栅极绝缘层，形成与所述栅极绝缘层上的所述半导体相对的第三电极，在所述第三电极上形成钝化层，以及在所述钝化层上形成像素电极。 TFT阵列面板具有高迁移率，因为TFT在TFT的沟道区域包括多晶硅。