公开(公告)号：US20100330395A1

公开(公告)日：2010-12-30

申请号：US12456935

申请日：2009-06-24

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Min Zheng

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Min Zheng

IPC分类号： G11B5/33 ,  B32B15/01 ,  B05D3/02

CPC分类号： G11B5/332 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/315 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49067 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12819

摘要： A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.

摘要翻译： 公开了用于产生纵向偏压以稳定相邻自旋阀中的自由层的硬偏压（HB）结构，其包括至少由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层 以提高上覆（Co / Ni）X层叠层的垂直磁各向异性（PMA）。 （Co / Ni）X HB层沉积涉及低功率和高Ar压力，以避免损坏Co / Ni界面，从而保留PMA。 在HB层上形成覆盖层以防止后续工艺步骤中的蚀刻剂。 在初始化之后，HB层中的磁化方向垂直于自旋阀的侧壁，并产生大于CoPt当量厚度的Mrt值。 可以在封盖层和自旋阀上形成非磁性金属分离层，以提供顶部和底部屏蔽之间的电连接。

公开(公告)号：US08563147B2

公开(公告)日：2013-10-22

申请号：US12456935

申请日：2009-06-24

申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Min Zheng

发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Min Zheng

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/332 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/315 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49067 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12819

摘要： A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.

摘要翻译： 公开了用于产生纵向偏压以稳定相邻自旋阀中的自由层的硬偏压（HB）结构，其包括至少由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层 以提高上覆（Co / Ni）X层叠层的垂直磁各向异性（PMA）。 （Co / Ni）X HB层沉积涉及低功率和高Ar压力，以避免损坏Co / Ni界面，从而保留PMA。 在HB层上形成覆盖层以防止后续工艺步骤中的蚀刻剂。 在初始化之后，HB层中的磁化方向垂直于自旋阀的侧壁，并产生大于CoPt当量厚度的Mrt值。 可以在封盖层和自旋阀上形成非磁性金属分离层，以提供顶部和底部屏蔽之间的电连接。

公开(公告)号：US20090009907A1

公开(公告)日：2009-01-08

申请号：US11825034

申请日：2007-07-03

申请人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

发明人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

IPC分类号： G11B5/127 ,  G11B5/147

CPC分类号： G11B5/3116 ,  G11B5/1278

摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).

摘要翻译： 公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。 由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。 层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。 在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。 使用最上层的Ru层作为CMP停止层。 可以采用后退火工艺来进一步降低各向异性场（Hk）。

公开(公告)号：US08493694B2

公开(公告)日：2013-07-23

申请号：US12927697

申请日：2010-11-22

申请人： Min Zheng ,  Kunliang Zhang ,  Min Li

发明人： Min Zheng ,  Kunliang Zhang ,  Min Li

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  H01F10/123 ,  H01F10/30 ,  H01F41/302 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1121

摘要： The free layer of a CPP-TMR sensor is biased by laterally disposed hard bias (HB) layers that include a seedlayer structure, a magnetic layer structure of high coercivity material and a capping layer structure. The magnetic layer structure is a layer of FePt-containing material, such as FePtCu, while the seedlayers and capping layers include layers of Cr, CrTi, Fe, FeCo or FeCoMo. These combinations enable the promotion of the L10 phase of the FePt-containing material which provides a high coercivity magnetic layer structure at much lower annealing temperatures than in the prior art.

摘要翻译： CPP-TMR传感器的自由层由横向设置的硬偏置（HB）层偏置，其包括种层结构，高矫顽力材料的磁性层结构和覆盖层结构。 磁性层结构是含FePt的材料层，例如FePtCu，而层和覆盖层包括Cr，CrTi，Fe，FeCo或FeCoMo层。 这些组合使得能够促进含FePt的材料的L10相，其提供比现有技术低得多的退火温度下的高矫顽磁性层结构。

公开(公告)号：US08591751B2

公开(公告)日：2013-11-26

申请号：US13200790

申请日：2011-09-30

申请人： Kunliang Zhang ,  Min Zheng ,  Min Li

发明人： Kunliang Zhang ,  Min Zheng ,  Min Li

IPC分类号： B44C1/22

CPC分类号： G11B5/3163 ,  B32B15/01 ,  H01F10/123 ,  H01F41/22 ,  H01F41/34 ,  Y10T428/265

摘要： High Hc (>4,000 Oe) and high Hk (>1 Tesla) has been achieved in FePt films as thin as 70 Angstroms. This was accomplished by starting with a relatively thick film having the required high coercivity, coating it with a suitable material such as Ta, and then using ion beam etching to remove surface material until the desired thickness was reached.

公开(公告)号：US20120129007A1

公开(公告)日：2012-05-24

申请号：US12927697

申请日：2010-11-22

申请人： Min Zheng ,  Kunliang Zhang ,  Min Li

发明人： Min Zheng ,  Kunliang Zhang ,  Min Li

IPC分类号： G11B5/39 ,  C23C14/14 ,  G11B5/33

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  H01F10/123 ,  H01F10/30 ,  H01F41/302 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1121

摘要： The free layer of a CPP-TMR sensor is biased by laterally disposed hard bias (HB) layers that include a seedlayer structure, a magnetic layer structure of high coercivity material and a capping layer structure. The magnetic layer structure is a layer of FePt-containing material, such as FePtCu, while the seedlayers and capping layers include layers of Cr, CrTi, Fe, FeCo or FeCoMo. These combinations enable the promotion of the L10 phase of the FePt-containing material which provides a high coercivity magnetic layer structure at much lower annealing temperatures than in the prior art.

摘要翻译： CPP-TMR传感器的自由层由横向设置的硬偏置（HB）层偏置，其包括种层结构，高矫顽力材料的磁性层结构和覆盖层结构。 磁性层结构是含FePt的材料层，例如FePtCu，而层和覆盖层包括Cr，CrTi，Fe，FeCo或FeCoMo层。 这些组合使得能够促进含FePt的材料的L10相，其提供比现有技术低得多的退火温度下的高矫顽磁性层结构。

公开(公告)号：US09034149B2

公开(公告)日：2015-05-19

申请号：US12387377

申请日：2009-05-01

申请人： Min Zheng ,  Kunliang Zhang ,  Min Li

发明人： Min Zheng ,  Kunliang Zhang ,  Min Li

IPC分类号： C23C14/58 ,  C23C14/14 ,  C23C14/02 ,  G01R33/09 ,  G11B5/31 ,  G11B5/39

CPC分类号： C23C14/5833 ,  C23C14/025 ,  C23C14/14 ,  C23C14/5873 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3932

摘要： A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that includes a mildly etched seed layer and a hard bias (HB) layer on the etched seed layer. The HB layer may contain one or more HB sub-layers stacked on a lower sub-layer which contacts the etched seed layer. Each HB sub-layer is mildly etched before depositing another HB sub-layer thereon. The etch may be performed in an IBD chamber and creates a higher concentration of nucleation sites on the etched surface thereby promoting a smaller HB average grain size than would be realized with no etch treatments. A smaller HB average grain size is responsible for increasing Hcr in a CoPt HB layer to as high as 2500 to 3000 Oe. Higher Hcr is achieved without changing the seed layer or HB material and without changing the thickness of the aforementioned layers.

摘要翻译： 公开了用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构，其包括在蚀刻的种子层上的温和蚀刻的种子层和硬偏置（HB）层。 HB层可以包含堆叠在与蚀刻的种子层接触的下子层上的一个或多个HB子层。 每个HB子层在其上沉积另一个HB子层之前被轻度蚀刻。 蚀刻可以在IBD室中进行，并且在蚀刻表面上产生更高浓度的成核位点，从而促进比无蚀刻处理实现的更小的HB平均晶粒尺寸。 较小的HB平均粒径负责将CoPt HB层中的Hcr增加到高达2500至3000 Oe。 在不改变种子层或HB材料而不改变上述层的厚度的情况下实现更高的Hcr。

公开(公告)号：US07773341B2

公开(公告)日：2010-08-10

申请号：US11825034

申请日：2007-07-03

申请人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

发明人： Kunliang Zhang ,  Min Zheng ,  Min Li ,  Chen-Jung Chien ,  Cherng-Chyi Han

IPC分类号： G11B5/33

CPC分类号： G11B5/3116 ,  G11B5/1278

摘要： A laminated main pole layer is disclosed in which a non-AFC scheme is used to break the magnetic coupling between adjacent high moment layers and reduce remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. An amorphous material layer with a thickness of 3 to 20 Angstroms and made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, or Si is inserted between adjacent high moment stacks. The laminated structure also includes an alignment layer below each high moment layer within each stack. In one embodiment, a Ru coupling layer is inserted between two high moment layers in each stack to introduce an AFC scheme. An uppermost Ru layer is used as a CMP stop layer. A post annealing process may be employed to further reduce the anisotropy field (Hk).

摘要翻译： 公开了一种层叠主极层，其中使用非AFC方案来破坏相邻的高力矩层之间的磁耦合，并且在保持高磁矩的同时降低硬轴方向的剩磁，并实现Hch，Hce和 Hk。 由Hf，Zr，Ta，Al，Mg，Zn或Si中的一种或多种的氧化物，氮化物或氧氮化物形成的厚度为3〜20埃的无定形材料层插入相邻的高强度叠层之间。 层叠结构还包括在每个堆叠内的每个高力矩层下面的对准层。 在一个实施例中，Ru耦合层插入每个堆叠中的两个高矩层之间以引入AFC方案。 使用最上层的Ru层作为CMP停止层。 可以采用后退火工艺来进一步降低各向异性场（Hk）。

公开(公告)号：US20130084452A1

公开(公告)日：2013-04-04

申请号：US13200790

申请日：2011-09-30

申请人： Kunliang Zhang ,  Min Zheng ,  Min Li

发明人： Kunliang Zhang ,  Min Zheng ,  Min Li

IPC分类号： B32B3/00 ,  C23F1/00 ,  H01F41/14

CPC分类号： G11B5/3163 ,  B32B15/01 ,  H01F10/123 ,  H01F41/22 ,  H01F41/34 ,  Y10T428/265

摘要： High Hc (>4,000 Oe) and high Hk (>1 Tesla) has been achieved in FePt films as thin as 70 Angstroms. This was accomplished by starting with a relatively thick film having the required high coercivity, coating it with a suitable material such as Ta, and then using ion beam etching to remove surface material until the desired thickness was reached.

摘要翻译： 在70埃的FePt薄膜中已经实现了高Hc（> 4,000 Oe）和高Hk（> 1特斯拉）。 这是通过用具有所需高矫顽力的相对厚的膜开始，用合适的材料如Ta涂覆，然后使用离子束蚀刻去除表面材料直至达到所需的厚度来实现的。

公开(公告)号：US08329320B2

公开(公告)日：2012-12-11

申请号：US12291715

申请日：2008-11-13

申请人： Kunliang Zhang ,  Min Li ,  Min Zheng ,  Fenglin Liu ,  Xiaomin Liu

发明人： Kunliang Zhang ,  Min Li ,  Min Zheng ,  Fenglin Liu ,  Xiaomin Liu

IPC分类号： G11B5/31 ,  G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  Y10T428/11 ,  Y10T428/115 ,  Y10T428/1171

摘要： A laminated high moment film with a non-AFC configuration is disclosed that can serve as a seed layer for a main pole layer or as the main pole layer itself in a PMR writer. The laminated film includes a plurality of (B/M) stacks where B is an alignment layer and M is a high moment layer. Adjacent (B/M) stacks are separated by an amorphous layer that breaks the magnetic coupling between adjacent high moment layers and reduces remanence in a hard axis direction while maintaining a high magnetic moment and achieving low values for Hch, Hce, and Hk. The amorphous material layer may be made of an oxide, nitride, or oxynitride of one or more of Hf, Zr, Ta, Al, Mg, Zn, Ti, Cr, Nb, or Si, or may be Hf, Zr, Ta, Nb, CoFeB, CoB, FeB, or CoZrNb. Alignment layers are FCC soft ferromagnetic materials or non-magnetic FCC materials.

摘要翻译： 公开了一种具有非AFC配置的叠层高力矩薄膜，其可用作主磁极层的种子层或作为PMR写入器中的主极点本身。 层叠膜包括多个（B / M）堆叠，其中B是取向层，M是高力矩层。 相邻的（B / M）堆叠被非晶层隔开，其破坏相邻高力矩层之间的磁耦合，并且在保持高磁矩并且实现Hch，Hce和Hk的低值的同时降低硬轴方向的剩磁。 非晶材料层可以由Hf，Zr，Ta，Al，Mg，Zn，Ti，Cr，Nb或Si中的一种或多种的氧化物，氮化物或氮氧化物制成，或者可以是Hf，Zr，Ta， Nb，CoFeB，CoB，FeB或CoZrNb。 对准层是FCC软铁磁材料或非磁性FCC材料。