公开(公告)号：US06174802B1

公开(公告)日：2001-01-16

申请号：US09342042

申请日：1999-06-28

申请人： Kuo-Ching Huang ,  Tse-Liang Ying ,  Wen-Chuan Chiang ,  Min-Hsiung Chiang

发明人： Kuo-Ching Huang ,  Tse-Liang Ying ,  Wen-Chuan Chiang ,  Min-Hsiung Chiang

IPC分类号： H01L214763

CPC分类号： H01L21/76897

摘要： A method for forming a self aligned contact without key holes using a two step contact deposition. The process begins by providing a semiconductor structure having conductive structures (such as bit lines) thereover with sidewalls and having a contact area adjacent to the conductive structures. The conductive structures comprise at least one conductive layer with a hard mask thereover. A spacer layer is formed over the hard mask and the substrate structure and anisotropically etched to form sidewall spacers on the sidewalls of the conductive structure. A second dielectric (IPO) layer is formed over the sidewall spacers, the hard mask, and the substrate structure, whereby the second dielectric layer has a keyhole. A contact opening is formed in the second dielectric layer over the contact area. A first contact layer having poor step coverage is formed in the contact openings and over the second dielectric layer, thereby plugging the keyhole without filling it. A second contact layer is formed over the first contact layer.

摘要翻译： 使用两步接触沉积形成无键孔的自对准接触的方法。 该过程开始于提供具有导电结构（例如位线）的半导体结构，其具有侧壁并且具有与导电结构相邻的接触区域。 导电结构包括至少一个具有硬掩模的导电层。 在硬掩模和衬底结构之上形成间隔层，并且各向异性蚀刻以在导电结构的侧壁上形成侧壁间隔物。 在侧壁间隔物，硬掩模和基板结构上方形成第二电介质层（IPO），由此第二介电层具有锁孔。 在接触区域上的第二电介质层中形成接触开口。 在接触开口和第二电介质层上形成具有差的台阶覆盖率的第一接触层，从而在不填充锁孔的情况下封闭钥匙孔。 在第一接触层上形成第二接触层。

公开(公告)号：US06194234B1

公开(公告)日：2001-02-27

申请号：US09324925

申请日：1999-06-04

申请人： Kuo-Ching Huang ,  Tse-Liang Ying ,  Wen-Chuan Chiang ,  Yu-Hua Lee

发明人： Kuo-Ching Huang ,  Tse-Liang Ying ,  Wen-Chuan Chiang ,  Yu-Hua Lee

IPC分类号： G01R3126

CPC分类号： H01L22/12

摘要： A new method based on measuring the weight of a wafer (on which the layer of HSG has been deposited) before (W1) and after (W2) the surface of the HSG layer is coated with a layer of either photoresist or SOG. The difference delta W=W2−W1 provides an indicator of the roughness or smoothness of the surface of the deposited layer of HSG. This new method can also be based on measuring the weight W of rejected or dropped PR or SOG after the surface of the HSG layer has been coated with a layer of either photoresist or SOG. The weight of the rejected or dropped PR or SOG also provides an indicator of the roughness or smoothness of the surface of the deposited layer of HSG.

摘要翻译： 基于测量在HSG层的表面之前（W1）和之后（W2）的晶片（其上沉积了HSG的层）的重量的新方法涂覆有光致抗蚀剂或SOG层。 差值ΔW= W2-W1提供HSG沉积层的表面的粗糙度或平滑度的指标。 这种新方法也可以基于测量在HSG层的表面已经涂覆有光致抗蚀剂或SOG层之后的被拒绝或掉落的PR或SOG的重量W。 拒收或掉落的PR或SOG的重量也提供HSG沉积层的表面的粗糙度或平滑度的指标。

公开(公告)号：US06214715B1

公开(公告)日：2001-04-10

申请号：US09349841

申请日：1999-07-08

申请人： Kuo-Ching Huang ,  Tse-Liang Ying ,  Wen-Chuan Chiang

发明人： Kuo-Ching Huang ,  Tse-Liang Ying ,  Wen-Chuan Chiang

IPC分类号： H01L2144

CPC分类号： H01L27/10855 ,  H01L21/76897 ,  H01L27/10885 ,  H01L28/91 ,  H01L28/92

摘要： This invention provides a method for forming a self aligned contact without key holes using a two step sidewall spacer deposition. The process begins by providing a semiconductor structure having a device layer, a first inter poly oxide layer (IPO-1), and a conductive structure (such as a bit line) thereover, and having a contact area on the device layer adjacent to the conductive structure. The semiconductor structure can further include an optional etch stop layer overlying the first inter poly oxide layer. The conductive structure comprises at least one conductive layer with a hard mask thereover. A first spacer layer is formed over the hard mask and the IPO-1 layer and anisotropically etched to form first sidewall spacers on the sidewalls of the conductive structure up to a level above the bottom of the hard mask and below the level of the top of the hard mask such that the profile of the first sidewall spacers are not concave at any point. A second spacer layer is formed over the first sidewall spacers and anisotropically etched to form second sidewall spacers, having a profile that is not concave at any point. A second inter poly oxide layer is formed over the second sidewall spacers, the hard mask, and the IPO-1 layer, whereby the second inter poly oxide layer is free from key holes. A contact opening is formed in the second inter poly oxide layer and the first inter poly oxide layer over the contact area. A contact plug is formed in the contact openings.

摘要翻译： 本发明提供一种用于使用两步侧壁间隔物沉积形成无键孔的自对准接触的方法。 该过程开始于提供具有器件层，第一多晶硅氧化物层（IPO-1）和导电结构（例如位线）的半导体结构，并且在与其相邻的器件层上具有接触区域 导电结构。 半导体结构还可以包括覆盖在第一多晶硅氧化物层上的任选的蚀刻停止层。 导电结构包括至少一个具有硬掩模的导电层。 在硬掩模和IPO-1层上形成第一间隔层，并且各向异性蚀刻以在导电结构的侧壁上形成直到硬掩模的底部以上的水平并且低于 硬掩模，使得第一侧壁隔片的轮廓在任何点都不是凹的。 第二间隔层形成在第一侧壁间隔物上并且各向异性蚀刻以形成第二侧壁间隔物，其具有在任何点处不凹的轮廓。 在第二侧壁间隔物，硬掩模和IPO-1层上形成第二多晶硅氧化物层，由此第二多晶氧化物层没有键孔。 在接触区域上的第二多晶氧化物层和第一多晶氧化物层中形成接触开口。 在接触开口中形成接触塞。

公开(公告)号：US06373369B2

公开(公告)日：2002-04-16

申请号：US09839927

申请日：2001-04-23

申请人： Kuo-Ching Huang ,  Jin-Yuan Lee ,  Tse-Liang Ying

发明人： Kuo-Ching Huang ,  Jin-Yuan Lee ,  Tse-Liang Ying

IPC分类号： H01F500

CPC分类号： H01F5/003

摘要： An improved thin film inductor design is described. A spiral geometry is used to which has been added a core of high permeability material located at the center of the spiral. If the high permeability material is a conductor, care must be taken to avoid any contact between the core and the spiral. If a dielectric ferromagnetic material is used, this constraint is removed from the design. Several other embodiments are shown in which, in addition to the high permeability core, provide low reluctance paths for the structure. In one case this takes the form of a frame of ferromagnetic material surrounding the spiral while in a second case it has the form of a hollow square located directly above the spiral.

摘要翻译： 描述了改进的薄膜电感器设计。 使用螺旋几何形状，其中已经添加了位于螺旋中心的高磁导率材料的核心。 如果高导磁率材料是导体，则必须注意避免芯和螺旋之间的任何接触。 如果使用介电铁磁材料，则从设计中去除该约束。 示出了其中除了高磁导率芯之外还提供用于结构的低磁阻路径的其它实施例。 在一种情况下，这采取围绕螺旋的铁磁材料框架的形式，而在第二种情况下，其具有直接位于螺旋上方的中空正方形的形式。

公开(公告)号：US06433665B1

公开(公告)日：2002-08-13

申请号：US09839702

申请日：2001-04-23

申请人： Kuo-Ching Huang ,  Jin Yuan Lee ,  Tse-Liang Ying

发明人： Kuo-Ching Huang ,  Jin Yuan Lee ,  Tse-Liang Ying

IPC分类号： H01F500

摘要： An improved thin film inductor design is described. A spiral geometry is used to which has been added a core of high permeability material located at the center of the spiral. If the high permeability material is a conductor, care must be taken to avoid any contact between the core and the spiral. If a dielectric ferromagnetic material is used, this constraint is removed from the design. Several other embodiments are shown in which, in addition to the high permeability core, provide low reluctance paths for the structure. In one case this takes the form of a frame of ferromagnetic material surrounding the spiral while in a second case it has the form of a hollow square located directly above the spiral.

公开(公告)号：US06278352B1

公开(公告)日：2001-08-21

申请号：US09359892

申请日：1999-07-26

申请人： Kuo-Ching Huang ,  Jin-Yuan Lee ,  Tse-Liang Ying

发明人： Kuo-Ching Huang ,  Jin-Yuan Lee ,  Tse-Liang Ying

IPC分类号： H01F500

CPC分类号： H01F5/003

摘要： An improved thin film inductor design is described. A spiral geometry is used to which has been added a core of high permeability material located at the center of the spiral. If the high permeability material is a conductor, care must be taken to avoid any contact between the core and the spiral. If a dielectric ferromagnetic material is used, this constraint is removed from the design. Several other embodiments are shown in which, in addition to the high permeability core, provide low reluctance paths for the structure. In one case this takes the form of a frame of ferromagnetic material surrounding the spiral while in a second case it has the form of a hollow square located directly above the spiral.

摘要翻译： 描述了改进的薄膜电感器设计。 使用螺旋几何形状，其中已经添加了位于螺旋中心的高磁导率材料的核心。 如果高导磁率材料是导体，则必须注意避免芯和螺旋之间的任何接触。 如果使用介电铁磁材料，则从设计中去除该约束。 示出了其中除了高磁导率芯之外还提供用于结构的低磁阻路径的其它实施例。 在一种情况下，这采取围绕螺旋的铁磁材料框架的形式，而在第二种情况下，其具有直接位于螺旋上方的中空正方形的形式。

公开(公告)号：US06661043B1

公开(公告)日：2003-12-09

申请号：US10400401

申请日：2003-03-27

申请人： Kuo-Ching Huang ,  Wen-Cheng Chen ,  Wen-Chuan Chiang ,  Kuo-Chuang Tseng

发明人： Kuo-Ching Huang ,  Wen-Cheng Chen ,  Wen-Chuan Chiang ,  Kuo-Chuang Tseng

IPC分类号： H01L218242

CPC分类号： H01L27/1085 ,  H01L27/1087

摘要： A new method is provided for the creation of a 1T RAM cell. Standard processing is applied to create STI trenches in the surface of a substrate, N2 implantations are performed into the sidewalls of the STI trenches. A layer of lining oxide is created, the implanted N2 interacts with the lining oxide to form SiON over exposed surfaces of the STI trenches. STI oxide is deposited and polished, filling the STI trenches there-with. Crown patterning is performed to define capacitor areas, the crown patterning stops on a layer of etch stop material and the created SION and partially removes STI oxide from the STI trenches. Layers of etch stop material, exposed SiON and pad oxide are removed, exposing the surface of the silicon substrate, the etched layers of STI oxide are not affected by this removal. A layer of SAC oxide is grown, n-well and p-well implantations are performed into the surface of the substrate. The layer of SAC oxide is removed, gate oxide is grown, polysilicon is deposited and patterned and etched, forming polysilicon gate material and polysilicon top plate of the capacitor. Standard processing is further applied to complete the 1T-RAM cell by providing gate spacers and impurity implantations for the gate electrode, by saliciding contact surfaces and by providing contacts to the points of contact of the cell.

摘要翻译： 提供了一种用于创建1T RAM单元的新方法。 施加标准处理以在衬底的表面中产生STI沟槽，在STI沟槽的侧壁中进行N2注入。 产生衬里氧化层，注入的N 2与衬里氧化物相互作用以在STI沟槽的暴露表面上形成SiON。 沉积和抛光STI氧化物，在那里填充STI沟槽。 进行冠图案化以限定电容器区域，冠图案停止在蚀刻停止材料层上，并且所产生的SION并且部分地从STI沟槽去除STI氧化物。 蚀刻停止材料层，暴露的SiON和衬垫氧化物层被去除，暴露硅衬底的表面，STI氧化物的蚀刻层不受该去除的影响。 生长一层SAC氧化物，n阱和p阱注入进行到衬底的表面。 去除SAC氧化物层，生长栅极氧化物，沉积多晶硅并进行图案化和蚀刻，形成电容器的多晶硅栅极材料和多晶硅顶板。 进一步应用标准处理，通过为栅电极提供栅极间隔物和杂质注入，通过对接触表面进行喷淋并且通过提供与电池的接触点的接触来完成1T-RAM单元。

公开(公告)号：US06638813B1

公开(公告)日：2003-10-28

申请号：US10059825

申请日：2002-01-29

申请人： Kuo-Chyuan Tzeng ,  Chen-Jong Wang ,  Chung-Wei Chang ,  Wen-Chuan Chiang ,  Wen-Cheng Chen ,  Kuo-Ching Huang

发明人： Kuo-Chyuan Tzeng ,  Chen-Jong Wang ,  Chung-Wei Chang ,  Wen-Chuan Chiang ,  Wen-Cheng Chen ,  Kuo-Ching Huang

IPC分类号： H01L218242

CPC分类号： H01L28/60 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/76232 ,  H01L27/11

摘要： A process for forming a composite insulator spacer on the sides of a buried stack capacitor structure, wherein the buried stack capacitor structure is located overlying a portion of an insulator filled, shallow trench isolation (STI) region, has been developed. A thin silicon nitride spacer is first formed on the sides of the completed buried stack capacitor structure, followed by deposition of a silicon oxide layer. An anisotropic dry etch procedure is next employed removing a top portion of the silicon oxide layer, and resulting in a partially defined silicon oxide spacer. A critical wet etch procedure is next used to remove the bottom portion of the silicon oxide layer, defining the final silicon oxide spacer of the composite insulator spacer, now comprised of a silicon oxide spacer on an underlying silicon nitride spacer. The wet etch procedure allows a gradual slope to be created at the composite insulator spacer—STI region interface, reducing the risk of leaving, or forming polysilicon residuals or stringers on the underlying surface, which can occur during definition of a MOSFET gate structure. The elimination of the polysilicon stringers reduces the risk of leakage between SRAM cell elements, such as buried stack capacitor structures, and MOSFET devices.

摘要翻译： 已经开发了一种用于在掩埋叠层电容器结构的侧面上形成复合绝缘体间隔物的方法，其中埋层叠层电容器结构位于绝缘体填充的浅沟槽隔离（STI）区域的一部分上方。 首先在完成的掩埋堆叠电容器结构的侧面上形成薄的氮化硅间隔物，然后沉积氧化硅层。 接下来，使用各向异性干蚀刻工艺去除氧化硅层的顶部，并产生部分限定的氧化硅间隔物。 接下来使用关键的湿法蚀刻工艺来去除氧化硅层的底部，限定复合绝缘垫片的最终氧化硅隔离物，现在由下面的氮化硅间隔物上的氧化硅间隔物构成。 湿蚀刻工艺允许在复合绝缘体间隔件-ST区域界面处产生逐渐的斜率，从而降低在MOSFET栅极结构的定义期间可能发生的在下表面上的离开风险或形成多晶硅残余物或桁条。 多晶硅桁架的消除降低了诸如掩埋堆叠电容器结构的SRAM单元元件和MOSFET器件之间的泄漏的风险。

公开(公告)号：US06420226B1

公开(公告)日：2002-07-16

申请号：US10020753

申请日：2001-12-12

申请人： Wen-Cheng Chen ,  Kuo-Ching Huang ,  Chen-Jong Wang ,  Wen-Chuan Chiang

发明人： Wen-Cheng Chen ,  Kuo-Ching Huang ,  Chen-Jong Wang ,  Wen-Chuan Chiang

IPC分类号： H01L218244

CPC分类号： H01L27/105 ,  H01L27/11 ,  H01L28/91 ,  H01L29/66181

摘要： A process for fabricating a buried stack capacitor structure, to be used in a one transistor, RAM cell, has been developed. The process features formation of a self-aligned, ring shaped storage node opening, formed in a top portion of an silicon oxide filled, shallow trench shape, via a selective dry etch procedure. The selective dry etch procedure in combination with subsequent selective wet etch procedures, create bare portions of semiconductor substrate at the junction of the ring shaped storage node opening and the adjacent top surface of semiconductor, allowing a heavily doped region to be created in this region. The presence of the heavily doped region reduces the node to substrate resistance encountered when a storage node structure is formed in the ring shaped storage node structure, as well as on the overlying the heavily doped region.

摘要翻译： 已经开发了用于单晶体管，RAM单元中的埋层叠层电容器结构的制造工艺。 该方法特征在于通过选择性干法蚀刻工艺形成形成在氧化硅填充的浅沟槽形状的顶部的自对准的环形存储节点开口。 选择性干蚀刻方法与随后的选择性湿法蚀刻程序结合，在环形存储节点开口和相邻的半导体顶表面的接合处产生半导体衬底的裸露部分，允许在该区域中产生重掺杂区域。 当在环形存储节点结构中形成存储节点结构时，以及在重掺杂区域上覆盖时，重掺杂区域的存在将节点与衬底电阻降低。

公开(公告)号：US20080318454A1

公开(公告)日：2008-12-25

申请号：US11766204

申请日：2007-06-21

申请人： Chen-Fa Wu ,  Chih-Nan Lin ,  Kuo-Ching Huang ,  Chin-An Huang

发明人： Chen-Fa Wu ,  Chih-Nan Lin ,  Kuo-Ching Huang ,  Chin-An Huang

IPC分类号： H01R12/16

CPC分类号： H05K1/0271 ,  H05K2201/044 ,  H05K2201/09063 ,  H05K2201/10409 ,  H05K2201/10734

摘要： An information handling system circuit board has an opening formed through it proximate a coupling point of an integrated circuit to the circuit board. The opening manages stress at the coupling point of the integrated circuit to the circuit board to reduce the risk of damage to the coupling point during deformation of the circuit board, such as when the circuit board is coupled to a chassis or when a component is pressed into the circuit board. In one embodiment, rectangular openings are formed at diagonally opposed corners of a BSA integrated circuit. In alternative embodiments, openings of varying shape, such as slots or curved slots, are formed at selected corners of the integrated circuit.

摘要翻译： 信息处理系统电路板具有通过其形成的开口，其靠近集成电路到电路板的耦合点。 开口处理集成电路到电路板的耦合点处的应力，以减少在电路板变形期间对耦合点的损坏的风险，例如当电路板耦合到底盘或当部件被按压时 进入电路板。 在一个实施例中，在BSA集成电路的对角相对的角上形成矩形开口。 在替代实施例中，在集成电路的选定角处形成变化形状的开口，例如槽或弯曲槽。