公开(公告)号：US20090009754A1

公开(公告)日：2009-01-08

申请号：US12097172

申请日：2006-12-14

申请人： Kurt L. Haller ,  David Shortt ,  Christian Wolters

发明人： Kurt L. Haller ,  David Shortt ,  Christian Wolters

IPC分类号： G01N21/88

CPC分类号： G01N21/9501

摘要： One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

摘要翻译： 一个系统包括检查子系统，该检查子系统被配置为将光引导到晶片上的一个点上，并产生响应于从晶片上的点散射的光的输出信号。 该系统还包括气流子系统，该气流子系统被配置成用与气体相比散射的光更少的介质来替代位于晶片上的点附近的气体，从而增加了系统的灵敏度。 另外，该系统包括配置成使用输出信号来检测晶片上的缺陷的处理器。

公开(公告)号：US07697129B2

公开(公告)日：2010-04-13

申请号：US12097172

申请日：2006-12-14

申请人： Kurt L. Haller ,  David Shortt ,  Christian Wolters

发明人： Kurt L. Haller ,  David Shortt ,  Christian Wolters

IPC分类号： G01N21/00

CPC分类号： G01N21/9501

摘要： Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

摘要翻译： 提供了用于检查具有增加的灵敏度的晶片的系统和方法。 一个系统包括检查子系统，该检查子系统被配置为将光引导到晶片上的一个点上，并产生响应于从晶片上的点散射的光的输出信号。 该系统还包括气流子系统，该气流子系统被配置成用与气体相比散射的光更少的介质来替代位于晶片上的点附近的气体，从而增加了系统的灵敏度。 另外，该系统包括配置成使用输出信号来检测晶片上的缺陷的处理器。

公开(公告)号：US07372559B2

公开(公告)日：2008-05-13

申请号：US11302936

申请日：2005-12-14

申请人： Kurt L. Haller ,  David Shortt ,  Christian Wolters

发明人： Kurt L. Haller ,  David Shortt ,  Christian Wolters

IPC分类号： G01N21/00

CPC分类号： G01N21/9501

摘要： Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

摘要翻译： 提供了用于检查具有增加的灵敏度的晶片的系统和方法。 一个系统包括检查子系统，该检查子系统被配置为将光引导到晶片上的一个点上，并产生响应于从晶片上的点散射的光的输出信号。 该系统还包括气流子系统，该气流子系统被配置成用与气体相比散射的光更少的介质来替代位于晶片上的点附近的气体，从而增加了系统的灵敏度。 另外，该系统包括配置成使用输出信号来检测晶片上的缺陷的处理器。

公开(公告)号：US08582094B1

公开(公告)日：2013-11-12

申请号：US11110383

申请日：2005-04-20

申请人： David Shortt ,  Stephen Biellak ,  Christian Wolters

发明人： David Shortt ,  Stephen Biellak ,  Christian Wolters

IPC分类号： G01N21/00 ,  G01J4/00

CPC分类号： G01N21/9501

摘要： Systems and methods for inspecting a specimen are provided. One system includes an illumination subsystem configured to direct light to the specimen at an oblique angle of incidence. The light is polarized in a plane that is substantially parallel to the plane of incidence. The system also includes a detection subsystem configured to detect light scattered from the specimen. The detected light is polarized in a plane that is substantially parallel to the plane of scattering. In addition, the system includes a processor configured to detect defects on the specimen using signals generated by the detection subsystem. In one embodiment, such a system may be configured to detect defects having a size that is less than half of a wavelength of the light directed to the specimen.

摘要翻译： 提供了检查样本的系统和方法。 一个系统包括被配置为以倾斜入射角将光引导到样本的照明子系统。 光在基本上平行于入射平面的平面中极化。 该系统还包括检测子系统，其被配置为检测从样本散射的光。 检测到的光在基本上平行于散射平面的平面中极化。 另外，该系统包括配置成使用由检测子系统产生的信号来检测样本上的缺陷的处理器。 在一个实施例中，这样的系统可以被配置为检测具有小于指向样本的光的波长的一半的尺寸的缺陷。

公开(公告)号：US07304310B1

公开(公告)日：2007-12-04

申请号：US10719347

申请日：2003-11-21

申请人： David Shortt ,  Christian Wolters

发明人： David Shortt ,  Christian Wolters

IPC分类号： G01J3/00

CPC分类号： G01N21/956 ,  G01N21/8806 ,  G01N21/94 ,  G01N2021/8854 ,  G01N2021/95676 ,  G03F7/7085 ,  G03F7/70916

摘要： Methods and systems for inspecting a specimen are provided. One method includes directing ultraviolet light to a specimen. The method also includes detecting light scattered from the specimen having a selected wavelength range. In addition, the method includes detecting features, defects, or light scattering properties of the specimen using signals representative of the detected light. One inspection system includes an illumination subsystem configured to direct ultraviolet light to a specimen. The system also includes a channel configured to detect light scattered from the specimen having a selected wavelength range. In addition, the system includes a processor configured to detect features, defects, or light scattering properties of the specimen using signals that are representative of the detected light.

摘要翻译： 提供了检查样本的方法和系统。 一种方法包括将紫外光引导到样品。 该方法还包括检测从具有选定波长范围的样本散射的光。 此外，该方法包括使用表示检测到的光的信号检测样本的特征，缺陷或光散射性质。 一个检查系统包括被配置为将紫外光引导到样本的照明子系统。 该系统还包括被配置为检测从具有选定波长范围的样本散射的光的通道。 另外，该系统包括处理器，其被配置为使用代表所检测到的光的信号来检测样本的特征，缺陷或光散射特性。

公开(公告)号：US20070132987A1

公开(公告)日：2007-06-14

申请号：US11302936

申请日：2005-12-14

申请人： Kurt Haller ,  David Shortt ,  Christian Wolters

发明人： Kurt Haller ,  David Shortt ,  Christian Wolters

IPC分类号： G01N21/88

CPC分类号： G01N21/9501

摘要： Systems and methods for inspecting a wafer with increased sensitivity are provided. One system includes an inspection subsystem configured to direct light to a spot on the wafer and to generate output signals responsive to light scattered from the spot on the wafer. The system also includes a gas flow subsystem configured to replace a gas located proximate to the spot on the wafer with a medium that scatters less of the light than the gas thereby increasing the sensitivity of the system. In addition, the system includes a processor configured to detect defects on the wafer using the output signals.

摘要翻译： 提供了用于检查具有增加的灵敏度的晶片的系统和方法。 一个系统包括检查子系统，该检查子系统被配置为将光引导到晶片上的一个点上，并产生响应于从晶片上的点散射的光的输出信号。 该系统还包括气流子系统，该气流子系统被配置成用与气体相比散射的光更少的介质来替代位于晶片上的点附近的气体，从而增加了系统的灵敏度。 另外，该系统包括配置成使用输出信号来检测晶片上的缺陷的处理器。

公开(公告)号：US08885158B2

公开(公告)日：2014-11-11

申请号：US13413521

申请日：2012-03-06

申请人： Christian Wolters ,  Juergen Reich

发明人： Christian Wolters ,  Juergen Reich

IPC分类号： G01N21/956 ,  G01N21/95

CPC分类号： G01N21/9501 ,  G01N21/956 ,  G01N2201/06113 ,  G01N2201/103

摘要： A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.

摘要翻译： 提出了具有独立可调的扫描间距和相关操作方法的表面扫描晶片检查系统。 可以独立于晶片表面上的照明区域来调整扫描间距。 在一些实施例中，在照明区域保持恒定的同时调整扫描间距。 例如，通过调整晶片的平移速度相对于晶片的旋转速率来调整缺陷灵敏度，而无需额外的光学调整。 在一些示例中，调整扫描间距以在整个晶片上实现期望的缺陷灵敏度。 在其他示例中，在晶片检查期间调整扫描间距以优化缺陷灵敏度和产量。 在其他示例中，调整扫描间距以使在检查的晶片的损伤极限内的缺陷灵敏度最大化。

公开(公告)号：US20080304069A1

公开(公告)日：2008-12-11

申请号：US11759092

申请日：2007-06-06

申请人： Christian Wolters ,  Jon Meyer

发明人： Christian Wolters ,  Jon Meyer

IPC分类号： G01N21/47 ,  G21G5/00

CPC分类号： G01N21/4738 ,  G01N2201/067 ,  G01N2201/0683

摘要： Systems and methods for inspecting a specimen with light at varying power levels are provided. One system configured to inspect a specimen includes a light source configured to generate light. The system also includes a power attenuator subsystem configured to alter a power level of the light directed to the specimen during inspection between at least two power levels including a full power level and a minimum power level equal to or greater than about 10% of the full power level. In addition, the system includes a detection subsystem configured to generate output responsive to the light scattered from the specimen. The output can be used to detect defects on the specimen.

摘要翻译： 提供了用于以不同功率水平检查具有光的样品的系统和方法。 被配置为检查样本的一个系统包括被配置为产生光的光源。 该系统还包括功率衰减器子系统，其被配置为在至少两个功率电平之间的检查期间改变被引导到样品的光的功率电平，所述功率电平包括等于或大于全功率电平的约10％的全功率电平和最小功率电平 能量等级。 另外，该系统包括检测子系统，该检测子系统被配置为响应于从样本散射的光产生输出。 输出可用于检测样品上的缺陷。

公开(公告)号：US20150330907A1

公开(公告)日：2015-11-19

申请号：US14556231

申请日：2014-11-30

申请人： Christian Wolters ,  Bret Whiteside ,  Anatoly Romanovsky

发明人： Christian Wolters ,  Bret Whiteside ,  Anatoly Romanovsky

IPC分类号： G01N21/88 ,  G01N21/95

CPC分类号： G01N21/9501 ,  G01N21/8806 ,  G01N2201/06113 ,  G01N2201/0633 ,  G02B27/0972

摘要： A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface.Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.

摘要翻译： 一种用于生产用于旋转晶片检测系统的高频动态聚焦倾斜激光照明的方法和装置。 通过改变光束方向入射角来改变焦点，以便将焦斑引入晶片表面。 本文公开了一种用于旋转晶片检查系统的自动光束成形（即光点尺寸）和转向（即，位置）的系统和方法，其组合成单个模块。 还公开了一种用于以足够的分辨率测量光束位置/尺寸/形状和角度以使用来自监视器的反馈进行校正的方法和系统。

公开(公告)号：US08755044B2

公开(公告)日：2014-06-17

申请号：US13565702

申请日：2012-08-02

申请人： Juergen Reich ,  Charles Amsden ,  Jiayao Zhang ,  Christian Wolters

发明人： Juergen Reich ,  Charles Amsden ,  Jiayao Zhang ,  Christian Wolters

IPC分类号： G01N21/956

CPC分类号： G01N21/9501 ,  G01N21/94 ,  G01N2021/555 ,  G01N2021/8835 ,  G01N2021/8845 ,  G01N2201/103 ,  H01L22/12

摘要： The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle.

摘要翻译： 响应于检测主照明点阵列的检查路径中的大颗粒，调整多点检查系统的照明功率密度。 至少一个低功率次级照明点位于相对较高功率的初级照明点的阵列的检查路径中。 从二次照明点散射的光被收集并成像到一个或多个检测器上，而不会使颗粒过热并损坏晶片。 呈现各种实施例和方法来区分从二次照明点散射的光。 响应于确定主照明点的检查路径中的大颗粒的存在，将命令发送到照明功率密度衰减器，以将主照明点的照明功率密度降低到初级照明点之前的安全水平 到达大颗粒。