Abstract:
In one embodiment, a surface analyzer system comprises a first radiation source to generate radiation at a first wavelength, a surface inspection assembly, and an edge detection assembly. In operation, the system enables contemporaneous surface inspection and edge detection.
Abstract:
An inspection system and method is provided herein for increasing the detection range of the inspection system. According to one embodiment, the inspection system may include a photodetector having a plurality of stages, which are adapted to convert light scattered from a specimen into an output signal, and a voltage divider network coupled for extending the detection range of the photodetector (and thus, the detection range of the inspection system) by saturating at least one of the stages. This forces the photodetector to operate in a non-linear manner. However, measurement inaccuracies are avoided by calibrating the photodetector output to remove any non-linear effects that may be created by intentionally saturating the at least one of the stages. In one example, a table of values may be generated during a calibration phase to convert the photodetector output into an actual amount of scattered light.
Abstract:
An inspection system and method is provided herein for increasing the detection range of the inspection system. According to one embodiment, the inspection system may include a photodetector having a plurality of stages, which are adapted to convert light scattered from a specimen into an output signal, and a voltage divider network coupled for extending the detection range of the photodetector (and thus, the detection range of the inspection system) by saturating at least one of the stages. This forces the photodetector to operate in a non-linear manner. However, measurement inaccuracies are avoided by calibrating the photodetector output to remove any non-linear effects that may be created by intentionally saturating the at least one of the stages. In one example, a table of values may be generated during a calibration phase to convert the photodetector output into an actual amount of scattered light.
Abstract:
Inspection systems, circuits and methods are provided to enhance defect detection by addressing saturation levels of the amplifier and analog-digital circuitry as a limiting factor of the measurement detection range of an inspection system. In accordance with one embodiment of the invention, a method for inspecting a specimen includes directing light to the specimen and detecting light scattered from the specimen. However, the step of detecting may use only one photodetector for detecting the light scattered from the specimen and for converting the light into an electrical signal. The step of detecting also includes generating a first signal and a second signal in response to the electrical signal, where the second signal differs from the first. For example, the first signal may be generated to have a higher resolution than the second signal for detecting substantially lower levels of the scattered light. In most cases, the method may use the first signal for detecting features, defects or light scattering properties of the specimen until the first signal reaches a predetermined threshold value. Once the predetermined threshold value is reached, however, the method may use the second signal for said detecting.
Abstract:
Various embodiments for extended defect sizing range for wafer inspection are provided. One inspection system includes an illumination subsystem configured to direct light to the wafer. The system also includes an image sensor configured to detect light scattered from wafer defects and to generate output responsive to the scattered light. The image sensor is also configured to not have an anti-blooming feature such that when a pixel in the image sensor reaches full well capacity, excess charge flows from the pixel to one or more neighboring pixels in the image sensor. The system further includes a computer subsystem configured to detect the defects on the wafer using the output and to determine a size of the defects on the wafer using the output generated by a pixel and any neighboring pixels of the pixel to which the excess charge flows.
Abstract:
Inspection systems, circuits, and methods are provided to enhance defect detection by reducing thermal damage to large particles by dynamically altering the incident laser beam power level supplied to the specimen during a surface inspection scan. In one embodiment, an inspection system includes an illumination subsystem for directing light to a specimen at a first power level, a detection subsystem for detecting light scattered from the specimen, and a power attenuator subsystem for dynamically altering the power level directed to the specimen based on the scattered light detected from the specimen. For example, the power attenuator subsystem may reduce the directed light to a second power level, which is lower than the first, if the detected scattered light exceeds a predetermined threshold level. In addition reducing thermal damage, the systems and methods described herein may be used to extend the measurement detection range of an inspection system by providing a variable-power inspection system.
Abstract:
A method and apparatus for producing high frequency dynamically focused oblique laser illumination for a spinning wafer inspection system. The focus is changed by changing the beam direction incidence angle so as to bring focal spot onto the wafer surface.Disclosed herein is a system and method for automatic beam shaping (i.e., spot size) and steering (i.e., position) for a spinning wafer inspection system, combined into a single module. Also disclosed is a method and system for measuring the beam position/size/shape and angle with sufficient resolution to make corrections using feedback from the monitor.
Abstract:
Disclosed herein is a method and apparatus for automatic correction of beam waist position drift in real time, using wafer inspection data taken during normal tool operation.Also disclosed herein is an improved laser astigmatism corrector for use either internal or external to the laser.