公开(公告)号：US20120037881A1

公开(公告)日：2012-02-16

申请号：US12983499

申请日：2011-01-03

申请人： Kwang Joong KIM ,  Chang Suk HAN ,  Kyung Hee YE ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

发明人： Kwang Joong KIM ,  Chang Suk HAN ,  Kyung Hee YE ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

摘要翻译： 本发明的示例性实施例公开了一种发光二极管，其包括掺杂有硅的n型接触层，p型接触层，设置在n型接触层和p型接触层之间的有源区，超晶格 所述超晶格层包括多个层，设置在所述超晶格层和所述n型接触层之间的未掺杂的中间层以及设置在所述未掺杂的中间层之间的电子增强层 层和超晶格层。 最靠近有源区的超晶格层的最终层被掺杂硅，并且最终层的硅掺杂浓度高于n型接触层的掺杂浓度。

公开(公告)号：US20120142134A1

公开(公告)日：2012-06-07

申请号：US13150759

申请日：2011-06-01

申请人： Kwang Joong KIM ,  Chang Suk HAN ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

发明人： Kwang Joong KIM ,  Chang Suk HAN ,  Seung Kyu CHOI ,  Ki Bum NAM ,  Nam Yoon KIM ,  Kyung Hae KIM ,  Ju Hyung YOON

IPC分类号： H01L33/02

CPC分类号： H01L33/007

摘要： Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.

摘要翻译： 本发明的示例性实施例涉及一种制造发光二极管（LED）的方法。 根据本发明的示例性实施例，该方法包括通过向室提供氮化物源气体和第一金属源气体，在第一温度下在衬底上生长第一GaN基半导体层，停止第一 金属源气体，并且在停止第一金属源气体的供给之后保持第一温度第一温度，在第一时间段之后将衬底的温度降低到第二温度，生长第一GaN的有源层 在第二温度下通过向腔室供应第二金属源气体。

公开(公告)号：US20200009448A1

公开(公告)日：2020-01-09

申请号：US16028613

申请日：2018-07-06

申请人： Byoung Koo CHO ,  Chang Suk HAN ,  Chang Hee CHUN ,  Bo Sub KIM ,  Yeon Uk JEONG

发明人： Byoung Koo CHO ,  Chang Suk HAN ,  Chang Hee CHUN ,  Bo Sub KIM ,  Yeon Uk JEONG

IPC分类号： A63C19/02

摘要： The present invention relates to an inclined structure of a court floor having a new structure for easily collecting automatically supplying balls used in practice. According to an inclined structure of a court floor according to the present disclosure, the ball used for practice can be rolled down outwardly along the slope of the court, and then be collected in the collecting ditch and gathered in one place, so there is no need to collect scattered balls separately.

公开(公告)号：US20170348582A1

公开(公告)日：2017-12-07

申请号：US15537944

申请日：2016-01-15

申请人： Byoung Koo CHO ,  Chang Suk HAN ,  Chang Hee CHUN

发明人： Byoung Koo CHO ,  Chang Suk HAN ,  Chang Hee CHUN

IPC分类号： A63B69/40 ,  A63B47/02 ,  A63B63/08 ,  A63B69/00 ,  A63B71/06 ,  A63B61/00

CPC分类号： A63B69/40 ,  A63B24/00 ,  A63B47/002 ,  A63B47/02 ,  A63B47/021 ,  A63B47/025 ,  A63B61/003 ,  A63B63/004 ,  A63B63/083 ,  A63B69/002 ,  A63B69/0071 ,  A63B69/0095 ,  A63B69/409 ,  A63B71/02 ,  A63B71/023 ,  A63B71/0669 ,  A63B2024/0025 ,  A63B2024/004 ,  A63B2071/025 ,  A63B2207/02 ,  A63B2220/10 ,  A63B2220/30 ,  A63B2220/805 ,  A63B2220/807 ,  A63B2220/833 ,  A63B2225/09

摘要： A ball supply apparatus includes: a housing coupled to the upper portion of the column structure, wherein a top portion of housing is partially opened, wherein the housing is divided by a partition into a ball storage portion and a ball discharge portion, wherein a bottom face of the ball storage portion is inclined downward toward the ball discharge portion, wherein a first opening is formed in a bottom of the ball discharge portion, and a second opening is formed in the partition at a lower portion thereof; a rotatable opening/closing plate rotatably coupled to the partition, wherein the rotatable opening/closing plate is configured to rotate to open/close the second opening; and a ball discharge tube rotatably coupled to the ball discharge portion at the first opening, wherein the ball discharge tube ball-communicates with the ball discharge portion via the first opening.

公开(公告)号：US20090242870A1

公开(公告)日：2009-10-01

申请号：US12193588

申请日：2008-08-18

申请人： Gyu Beom KIM ,  Sang Joon LEE ,  Chang Suk HAN ,  Kwang Choong KIM

发明人： Gyu Beom KIM ,  Sang Joon LEE ,  Chang Suk HAN ,  Kwang Choong KIM

IPC分类号： H01L33/00

CPC分类号： H01L33/04 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3063 ,  H01S5/3216 ,  H01S5/34333 ,  H01S2304/04

摘要： Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided.