公开(公告)号：US08357924B2

公开(公告)日：2013-01-22

申请号：US12983499

申请日：2011-01-03

申请人： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

发明人： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC分类号： H01L31/00

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

公开(公告)号：US08470626B2

公开(公告)日：2013-06-25

申请号：US13150759

申请日：2011-06-01

申请人： Kwang Joong Kim ,  Chang Suk Han ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

发明人： Kwang Joong Kim ,  Chang Suk Han ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC分类号： H01L21/00

CPC分类号： H01L33/007

摘要： Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.

摘要翻译： 本发明的示例性实施例涉及一种制造发光二极管（LED）的方法。 根据本发明的示例性实施例，该方法包括通过向室提供氮化物源气体和第一金属源气体，在第一温度下在衬底上生长第一GaN基半导体层，停止第一 金属源气体，并且在停止第一金属源气体的供给之后保持第一温度第一温度，在第一时间段之后将衬底的温度降低到第二温度，生长第一GaN的有源层 在第二温度下通过向腔室供应第二金属源气体。