公开(公告)号：US08357924B2

公开(公告)日：2013-01-22

申请号：US12983499

申请日：2011-01-03

申请人： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

发明人： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC分类号： H01L31/00

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

摘要： Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

公开(公告)号：US08470626B2

公开(公告)日：2013-06-25

申请号：US13150759

申请日：2011-06-01

申请人： Kwang Joong Kim ,  Chang Suk Han ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

发明人： Kwang Joong Kim ,  Chang Suk Han ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

IPC分类号： H01L21/00

CPC分类号： H01L33/007

摘要： Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.

摘要翻译： 本发明的示例性实施例涉及一种制造发光二极管（LED）的方法。 根据本发明的示例性实施例，该方法包括通过向室提供氮化物源气体和第一金属源气体，在第一温度下在衬底上生长第一GaN基半导体层，停止第一 金属源气体，并且在停止第一金属源气体的供给之后保持第一温度第一温度，在第一时间段之后将衬底的温度降低到第二温度，生长第一GaN的有源层 在第二温度下通过向腔室供应第二金属源气体。

公开(公告)号：US08093583B2

公开(公告)日：2012-01-10

申请号：US12517314

申请日：2007-11-21

申请人： Sang Joon Lee ,  Duck Hwan Oh ,  Kyung Hae Kim ,  Chang Seok Han

发明人： Sang Joon Lee ,  Duck Hwan Oh ,  Kyung Hae Kim ,  Chang Seok Han

IPC分类号： H01L29/06 ,  H01L31/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.

摘要翻译： 公开了一种具有超晶格结构的阻挡层的发光二极管（LED）。 在具有GaN基N型化合物半导体层和GaN系P型化合物半导体层之间的有源区域的LED中，有源区域包括阱层和具有超晶格结构的势垒层。 由于采用具有超晶格结构的阻挡层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。

公开(公告)号：US20100059735A1

公开(公告)日：2010-03-11

申请号：US12517314

申请日：2007-11-21

申请人： Sang Joon Lee ,  Duck Hwan Oh ,  Kyung Hae Kim ,  Chang Seok Han

发明人： Sang Joon Lee ,  Duck Hwan Oh ,  Kyung Hae Kim ,  Chang Seok Han

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06

摘要： A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.

摘要翻译： 公开了一种具有超晶格结构的阻挡层的发光二极管（LED）。 在具有GaN基N型化合物半导体层和GaN系P型化合物半导体层之间的有源区域的LED中，有源区域包括阱层和具有超晶格结构的势垒层。 由于采用具有超晶格结构的阻挡层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。

公开(公告)号：US20080265272A1

公开(公告)日：2008-10-30

申请号：US12090053

申请日：2007-03-20

申请人： Duck Hwan Oh ,  Sang Joon Lee ,  Kyung Hae Kim

发明人： Duck Hwan Oh ,  Sang Joon Lee ,  Kyung Hae Kim

IPC分类号： H01L33/00

CPC分类号： H01L27/15 ,  H01L23/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  Y10S438/983 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.

摘要翻译： 公开了一种其中具有齐纳二极管的发光器件和制造发光器件的方法。 发光器件包括具有齐纳二极管区域和发光二极管区域的P型硅衬底。 第一N型化合物半导体层与P型硅衬底的齐纳二极管区域接触，以与P型硅衬底一起显示齐纳二极管的特性。 此外，第二N型化合物半导体层位于P型硅衬底的发光二极管区域上。 第二N型化合物半导体层与第一N型化合物半导体层间隔开。 同时，P型化合物半导体层位于第二N型化合物半导体层上，有源层插入在第二N型化合物半导体层和P型化合物半导体层之间。

公开(公告)号：US07772600B2

公开(公告)日：2010-08-10

申请号：US12090053

申请日：2007-03-20

申请人： Duck Hwan Oh ,  Sang Joon Lee ,  Kyung Hae Kim

发明人： Duck Hwan Oh ,  Sang Joon Lee ,  Kyung Hae Kim

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  H01L23/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49107 ,  H01L2224/73265 ,  Y10S438/983 ,  H01L2924/00014 ,  H01L2924/00

摘要： Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.

摘要翻译： 公开了一种其中具有齐纳二极管的发光器件和制造发光器件的方法。 发光器件包括具有齐纳二极管区域和发光二极管区域的P型硅衬底。 第一N型化合物半导体层与P型硅衬底的齐纳二极管区域接触，以与P型硅衬底一起显示齐纳二极管的特性。 此外，第二N型化合物半导体层位于P型硅衬底的发光二极管区域上。 第二N型化合物半导体层与第一N型化合物半导体层间隔开。 同时，P型化合物半导体层位于第二N型化合物半导体层上，有源层插入在第二N型化合物半导体层和P型化合物半导体层之间。