公开(公告)号：US20130105877A1

公开(公告)日：2013-05-02

申请号：US13614028

申请日：2012-09-13

申请人： Kyoung-Hoon KIM ,  Hong-Soo KIM ,  Hoo-Sung CHO

发明人： Kyoung-Hoon KIM ,  Hong-Soo KIM ,  Hoo-Sung CHO

IPC分类号： H01L27/105 ,  H01L21/8239

CPC分类号： H01L29/66825 ,  H01L21/76232 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/66833

摘要： A non-volatile memory device includes a substrate including an active region and a field region, selection transistors and cell transistors on the active region, bit line contacts on the bridge portions, and shared bit lines electrically connected to the bit line contacts. The active region includes string portions and bridge portions. The string portions extends in a first direction and is arranged in a second direction substantially perpendicular to the first direction, and the bridge portions connects at least two adjacent string portions. Each bridge portion has a length in the first direction equal to or longer than about twice a width of each bit line contact in the first direction.

摘要翻译： 非易失性存储器件包括：衬底，其包括有源区域和场区域，有源区域上的选择晶体管和单元晶体管，桥接部分上的位线接触，以及电连接到位线触点的共享位线。 有源区域包括串部分和桥接部分。 弦线部分沿第一方向延伸并且布置在基本上垂直于第一方向的第二方向上，并且桥接部分连接至少两个相邻的线部分。 每个桥接部分具有在第一方向上的长度等于或大于每个位线接触件在第一方向上的宽度的大约两倍。

公开(公告)号：US20180012903A1

公开(公告)日：2018-01-11

申请号：US15601501

申请日：2017-05-22

申请人： Kyoung-Hoon KIM ,  Hong-Soo KIM ,  Ju-Yeon LEE

发明人： Kyoung-Hoon KIM ,  Hong-Soo KIM ,  Ju-Yeon LEE

IPC分类号： H01L23/528

摘要： A vertical memory device includes a substrate including a cell region and a peripheral circuit region, gate electrodes sequentially stacked on the cell region of the substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a channel on the cell region and extending through the gate electrodes in the vertical direction, a first lower contact plug on the peripheral circuit region and extending in the vertical direction, a second lower contact plug on the peripheral circuit region adjacent to the first lower contact plug and extending in the vertical direction, and a first upper wiring electrically connected to the first lower contact plug. The first upper wiring is configured to and apply an electrical signal to the first lower contact plug. The second lower contact plug is not electrically connected to an upper wiring configured to apply an electrical signal.

公开(公告)号：US20110159221A1

公开(公告)日：2011-06-30

申请号：US12878900

申请日：2010-09-09

申请人： Churl-Hee CHO ,  Do-Kyung KIM ,  Jeong-Gu YEO ,  Young-Soo Ahn ,  Dong-Kook KIM ,  Hong-Soo KIM

发明人： Churl-Hee CHO ,  Do-Kyung KIM ,  Jeong-Gu YEO ,  Young-Soo Ahn ,  Dong-Kook KIM ,  Hong-Soo KIM

IPC分类号： D02G3/02 ,  C08L81/06 ,  C08L33/20 ,  C08L27/16 ,  C08L33/24 ,  C08L1/12 ,  D02G1/00

CPC分类号： B29C47/0026 ,  B01D69/08 ,  B01D69/087 ,  B01D71/024 ,  B22F3/23 ,  B82Y30/00 ,  C04B35/62236 ,  C04B35/62272 ,  C04B35/62281 ,  C04B35/62295 ,  C04B35/634 ,  C04B2235/404 ,  C04B2235/421 ,  C04B2235/5284 ,  C09D5/00 ,  C22C1/058 ,  C22C29/00 ,  C22C29/02 ,  C22C29/12 ,  C22C29/16 ,  C22C47/14 ,  D01D10/02 ,  D01F9/08 ,  Y10T428/1369

摘要： Disclosed herein is a method of manufacturing inorganic hollow yarns, such as cermets, oxide-non oxide composites, poorly sinterable non-oxides, and the like, at low costs. The method includes preparing a composition comprising a self-propagating high temperature reactant, a polymer and a dispersant, wet-spinning the composition through a spinneret to form wet-spun yarns, washing and drying the wet-spun yarns to form polymer-self propagating high temperature reactant hollow yarns, and heat-treating the polymer-self propagating high temperature reactant hollow yarns to remove a polymeric component from the polymer-self propagating high temperature reactant hollow yarns while inducing self-propagating high temperature reaction of the self-propagating high temperature reactant to form inorganic hollow yarns. The composition comprises 45˜60 wt % of the self-propagating high temperature reactant, 6˜17 wt % of the polymer, 0.1˜4 wt % of the dispersant, and the balance of an organic solvent.

摘要翻译： 本文公开了以低成本制造无机中空丝的方法，例如金属陶瓷，氧化物非氧化物复合材料，不易烧结的非氧化物等。 该方法包括制备包含自蔓延高温反应物，聚合物和分散剂的组合物，通过喷丝头将组合物湿纺以形成湿纺丝，洗涤和干燥湿纺丝以形成聚合物自传播 高温反应物中空纱线，并热处理聚合物自蔓延高温反应物中空纱线，以从聚合物自传播的高温反应物中空纱线中除去聚合物组分，同时诱导自传播高自由度的高温反应 温度反应物形成无机中空纱线。 组合物包含45〜60重量％的自蔓延高温反应物，6〜17重量％的聚合物，0.1〜4重量％的分散剂和余量的有机溶剂。

公开(公告)号：US20090262580A1

公开(公告)日：2009-10-22

申请号：US12495971

申请日：2009-07-01

申请人： Pan-Suk KWAK ,  Hong-Soo KIM

发明人： Pan-Suk KWAK ,  Hong-Soo KIM

IPC分类号： G11C16/04

CPC分类号： G11C16/3418

摘要： In a NAND flash memory device, a dummy NAND string is arranged between a plurality of normal NAND strings. A dummy bit line connected to the dummy NAND string is formed and/or controlled such that when program voltages are applied to the normal NAND strings, memory cells within the dummy NAND string are not programmed.

摘要翻译： 在NAND闪存器件中，虚拟NAND串被布置在多个正常NAND串之间。 形成和/或控制连接到虚拟NAND串的虚拟位线，使得当将程序电压施加到常规NAND串时，虚拟NAND串内的存储器单元不被编程。