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公开(公告)号：US08525963B2
公开(公告)日：2013-09-03
申请号：US12495828
申请日：2009-07-01
申请人： Kyoung-Tai Han , Seong-Young Lee , Hyang-Shik Kong , Se-Hwan Yu , Byung-Duk Yang , Su-Hyoung Kang , Kyung-Sook Jeon
发明人： Kyoung-Tai Han , Seong-Young Lee , Hyang-Shik Kong , Se-Hwan Yu , Byung-Duk Yang , Su-Hyoung Kang , Kyung-Sook Jeon
IPC分类号： G02F1/1343 , G02F1/1339
CPC分类号： G02F1/1345 , G02F1/1343 , G02F2001/133388
摘要： A liquid crystal display capable of reducing the stray capacitance of a non-display region and a method of manufacturing the same. The liquid crystal display includes a first substrate, gate lines and data lines intersecting each other on the first substrate to define pixels, a second substrate arranged opposite to the first substrate, a common electrode formed in a display area of the second substrate in which an image is displayed, and a floating electrode formed in a non-display region of the second substrate in which no image is displayed.
摘要翻译： 一种能够降低非显示区域的杂散电容的液晶显示器及其制造方法。 液晶显示器包括：第一基板，在第一基板上彼此相交的栅极线和数据线，以限定像素;与第一基板相对布置的第二基板;形成在第二基板的显示区域中的公共电极， 显示图像，以及形成在第二基板的不显示图像的非显示区域中的浮动电极。
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公开(公告)号：US08841668B2
公开(公告)日：2014-09-23
申请号：US12415002
申请日：2009-03-31
申请人： Byung-Duk Yang , Eun-Guk Lee , Se-Hwan Yu , Kyoung-Tai Han , Su-Hyoung Kang , Kyung-Sook Jeon
发明人： Byung-Duk Yang , Eun-Guk Lee , Se-Hwan Yu , Kyoung-Tai Han , Su-Hyoung Kang , Kyung-Sook Jeon
IPC分类号： H01L29/04 , H01L21/00 , H01L27/12 , H01L29/786
CPC分类号： G02F1/133516 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/78633
摘要： An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.
摘要翻译： 阵列基板包括： 设置在基板上的基板，栅极线和数据线，与栅极线和数据线电连接的薄膜晶体管（“TFT”），设置在基板上的遮光部件和第一滤色器 第二滤色器设置在基板上。 遮光构件覆盖第一滤色器的一部分，并且第二滤色器覆盖遮光构件的一部分。
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公开(公告)号：US20100123137A1
公开(公告)日：2010-05-20
申请号：US12415002
申请日：2009-03-31
申请人： Byung-Duk Yang , Eun-Guk Lee , Se-Hwan Yu , Kyoung-Tai Han , Su-Hyoung Kang , Kyung-Sook Jeon
发明人： Byung-Duk Yang , Eun-Guk Lee , Se-Hwan Yu , Kyoung-Tai Han , Su-Hyoung Kang , Kyung-Sook Jeon
CPC分类号： G02F1/133516 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/78633
摘要： An array substrate includes; a substrate, a gate line and a data line disposed on the substrate, a thin film transistor (“TFT”) electrically connected to the gate line and the data line, a light blocking member disposed on the substrate and a first color filter and a second color filter disposed on the substrate. The light blocking member covers a portion of the first color filter and the second color filter covers a portion of the light blocking member.
摘要翻译： 阵列基板包括： 设置在基板上的基板，栅极线和数据线，与栅极线和数据线电连接的薄膜晶体管（“TFT”），设置在基板上的遮光部件和第一滤色器 第二滤色器设置在基板上。 遮光构件覆盖第一滤色器的一部分，并且第二滤色器覆盖遮光构件的一部分。
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4.发明授权公开(公告)号：US08253891B2
公开(公告)日：2012-08-28
申请号：US12425842
申请日：2009-04-17
申请人： Se-Hwan Yu , Hyang-Shik Kong , Jang-Soo Kim , Byung-Duk Yang , Kyoung-Tai Han
发明人： Se-Hwan Yu , Hyang-Shik Kong , Jang-Soo Kim , Byung-Duk Yang , Kyoung-Tai Han
IPC分类号： G02F1/1335
CPC分类号： G02F1/136209 , G02F1/13394 , G02F2001/133388 , G02F2001/13396 , G02F2001/136222
摘要： A thin film transistor array panel includes: a substrate, a plurality of gate and data lines, a thin film transistor, a light blocking member, a color filter, and a pixel electrode. The substrate includes a display area having a plurality of pixels and a non-display area. The gate lines and data lines are formed on the substrate. The thin film transistor is connected to a respective gate line and data line of the plurality of gate and data lines. The light blocking member is formed on the non-display area, the gate line, the data line, and the thin film transistor. The color filter is formed on the light blocking member. The pixel electrode is formed on the color filter. The color filter covers the entire light blocking member of the non-display area.
摘要翻译： 薄膜晶体管阵列面板包括：基板，多个栅极和数据线，薄膜晶体管，遮光部件，滤色器和像素电极。 基板包括具有多个像素和非显示区域的显示区域。 栅极线和数据线形成在衬底上。 薄膜晶体管连接到多个栅极和数据线的相应的栅极线和数据线。 遮光构件形成在非显示区域，栅极线，数据线和薄膜晶体管上。 滤光器形成在遮光部件上。 像素电极形成在滤色器上。 滤色器覆盖非显示区域的整个遮光构件。
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公开(公告)号：US08610864B2
公开(公告)日：2013-12-17
申请号：US12560976
申请日：2009-09-16
申请人： Eun-Guk Lee , Byung-Duk Yang , Hyang-Shik Kong , Se-Hwan Yu , Sang-ki Kwak , Kyoung-Tai Han , Dong-Yoon Kim
发明人： Eun-Guk Lee , Byung-Duk Yang , Hyang-Shik Kong , Se-Hwan Yu , Sang-ki Kwak , Kyoung-Tai Han , Dong-Yoon Kim
IPC分类号： G02F1/1343 , G02F1/1337
CPC分类号： G02F1/134309 , G02F1/133753 , G02F1/13624 , G02F1/1393 , G02F2001/134345
摘要： A liquid crystal display according to an exemplary embodiment of the present invention includes: a pixel electrode including a first subpixel electrode and a second subpixel electrode with a gap therebetween; a common electrode facing the pixel electrode; and a liquid crystal layer formed between the pixel electrode and the common electrode, and including a plurality of liquid crystal molecules, wherein the first and second subpixel electrodes include a plurality of minute branches, the first and second subpixel electrodes include a plurality of subregions having different length directions of the minute branches, and the width of the minute branches is wider than an interval between the neighboring minute branches.
摘要翻译： 根据本发明的示例性实施例的液晶显示器包括：像素电极，包括第一子像素电极和第二子像素电极，其间具有间隙; 面对像素电极的公共电极; 以及形成在像素电极和公共电极之间的液晶层，并且包括多个液晶分子，其中第一和第二子像素电极包括多个分支，第一和第二子像素电极包括多个子区域，其具有 分支分支的不同长度方向，分支分支的宽度比相邻分支之间的间隔宽。
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公开(公告)号：US20100195034A1
公开(公告)日：2010-08-05
申请号：US12560976
申请日：2009-09-16
申请人： Eun-Guk Lee , Byung-Duk Yang , Hyang-Shik Kong , Se-Hwan Yu , Sang-ki Kwak , Kyoung-Tai Han , Dong-Yoon Kim
发明人： Eun-Guk Lee , Byung-Duk Yang , Hyang-Shik Kong , Se-Hwan Yu , Sang-ki Kwak , Kyoung-Tai Han , Dong-Yoon Kim
IPC分类号： G02F1/1337 , G02F1/1343
CPC分类号： G02F1/134309 , G02F1/133753 , G02F1/13624 , G02F1/1393 , G02F2001/134345
摘要： A liquid crystal display according to an exemplary embodiment of the present invention includes: a pixel electrode including a first subpixel electrode and a second subpixel electrode with a gap therebetween; a common electrode facing the pixel electrode; and a liquid crystal layer formed between the pixel electrode and the common electrode, and including a plurality of liquid crystal molecules, wherein the first and second subpixel electrodes include a plurality of minute branches, the first and second subpixel electrodes include a plurality of subregions having different length directions of the minute branches, and the width of the minute branches is wider than an interval between the neighboring minute branches.
摘要翻译： 根据本发明的示例性实施例的液晶显示器包括：像素电极，包括第一子像素电极和第二子像素电极，其间具有间隙; 面对像素电极的公共电极; 以及形成在像素电极和公共电极之间的液晶层，并且包括多个液晶分子，其中第一和第二子像素电极包括多个分支，第一和第二子像素电极包括多个子区域，其具有 分支分支的不同长度方向，分支分支的宽度比相邻分支之间的间隔宽。
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7.发明申请THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME 有权薄膜晶体管基板，其制造方法和具有其的显示装置公开(公告)号：US20090057671A1
公开(公告)日：2009-03-05
申请号：US12195974
申请日：2008-08-21
IPC分类号： G02F1/1335 , H01L33/00 , H01L21/00
CPC分类号： G02F1/1362 , G02F1/133514 , G02F2001/1316 , G02F2001/136222 , H01L27/124
摘要： Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.
摘要翻译： 通过用无机绝缘层密封滤色器层，从而阻挡了设置在薄膜晶体管（TFT）支撑基板上的滤色器层的材料。 在批量生产制造期间，在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上，包括顺应地包括通过滤色器层提供的开口。
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8.发明授权公开(公告)号：US07989807B2
公开(公告)日：2011-08-02
申请号：US12195974
申请日：2008-08-21
IPC分类号： H01L29/04
CPC分类号： G02F1/1362 , G02F1/133514 , G02F2001/1316 , G02F2001/136222 , H01L27/124
摘要： Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.
摘要翻译： 通过用无机绝缘层密封滤色器层，从而阻挡了设置在薄膜晶体管（TFT）支撑基板上的滤色器层的材料。 在批量生产制造期间，在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上，包括顺应地包括通过滤色器层提供的开口。
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9.发明授权公开(公告)号：US08426228B2
公开(公告)日：2013-04-23
申请号：US13181403
申请日：2011-07-12
CPC分类号： G02F1/1362 , G02F1/133514 , G02F2001/1316 , G02F2001/136222 , H01L27/124
摘要： Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.
摘要翻译： 通过用无机绝缘层密封滤色器层，从而阻挡了设置在薄膜晶体管（TFT）支撑基板上的滤色器层的材料。 在批量生产制造期间，在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上，包括顺应地包括通过滤色器层提供的开口。
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10.发明申请THIN-FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING SAME AND DISPLAY APPARATUS HAVING SAME 有权薄膜晶体管基板，其制造方法和具有其的显示装置公开(公告)号：US20110269254A1
公开(公告)日：2011-11-03
申请号：US13181403
申请日：2011-07-12
IPC分类号： H01L33/08
CPC分类号： G02F1/1362 , G02F1/133514 , G02F2001/1316 , G02F2001/136222 , H01L27/124
摘要： Contamination is blocked from material of a color filter layer provided on a thin-film transistors (TFT) supporting substrate by sealing over the color filter layer with an inorganic insulating layer. During mass production manufacture, a plasma surface cleaning step is employed after the color filter layer is deposited but before the inorganic insulating layer is deposited. A low temperature CVD process is used to deposit the inorganic insulating layer with a substantially uniform thickness conformably over the color filter layer including conformably into openings provided through the color filter layer.
摘要翻译： 通过用无机绝缘层密封滤色器层，从而阻挡了设置在薄膜晶体管（TFT）支撑基板上的滤色器层的材料。 在批量生产制造期间，在沉积滤色器层之后但在沉积无机绝缘层之前采用等离子体表面清洁步骤。 使用低温CVD工艺将无机绝缘层的厚度基本上均匀地沉积在滤色器层上，包括顺应地包括通过滤色器层提供的开口。
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