Semiconductor Memory Devices Including Support Patterns
    2.
    发明申请
    Semiconductor Memory Devices Including Support Patterns 有权
    包括支持模式的半导体存储器件

    公开(公告)号:US20120217560A1

    公开(公告)日:2012-08-30

    申请号:US13371127

    申请日:2012-02-10

    IPC分类号: H01L27/108

    摘要: A capacitor dielectric can be between the storage node and the electrode layer. A supporting pattern can be connected to the storage node, where the supporting pattern can include at least one first pattern and at least one second pattern layered on one another, where the first pattern can include a material having an etch selectivity with respect to the second pattern.

    摘要翻译: 电容器电介质可以在存储节点和电极层之间。 支撑图案可以连接到存储节点,其中支撑图案可以包括至少一个第一图案和彼此分层的至少一个第二图案,其中第一图案可以包括具有相对于第二图案的蚀刻选择性的材料 模式。

    Semiconductor devices and methods of fabricating the same
    3.
    发明授权
    Semiconductor devices and methods of fabricating the same 有权
    半导体器件及其制造方法

    公开(公告)号:US08927389B2

    公开(公告)日:2015-01-06

    申请号:US13369476

    申请日:2012-02-09

    摘要: A method of fabricating a semiconductor device includes providing a substrate including a first region and a second region, forming a first trench having a first width in the first region and a second trench having a second width in the second region, and the second width is greater than the first width. The method also includes forming a first insulation layer in the first and second trenches, removing the first insulation layer in the second trench to form a first insulation pattern that includes the first insulation layer remaining in the first trench, forming on the substrate a second insulation layer that fills the second trench, and the second insulation layer includes a different material from the first insulation layer.

    摘要翻译: 一种制造半导体器件的方法包括提供包括第一区域和第二区域的衬底,在第一区域中形成具有第一宽度的第一沟槽和在第二区域中具有第二宽度的第二沟槽,第二宽度为 大于第一宽度。 该方法还包括在第一沟槽和第二沟槽中形成第一绝缘层,去除第二沟槽中的第一绝缘层以形成第一绝缘图案,其包括残留在第一沟槽中的第一绝缘层,在衬底上形成第二绝缘层 层,其填充第二沟槽,并且第二绝缘层包括与第一绝缘层不同的材料。

    METHOD OF FORMING SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD OF FORMING SEMICONDUCTOR DEVICE 审中-公开
    形成半导体器件的方法

    公开(公告)号:US20100203700A1

    公开(公告)日:2010-08-12

    申请号:US12686638

    申请日:2010-01-13

    IPC分类号: H01L21/762

    摘要: A method of forming a semiconductor device includes preparing a substrate having a recessed area. A silicon oxide layer is formed at the recessed area. A catalytic nitridation treatment is performed for an upper portion of the silicon oxide layer to form a nitridation reactant on the upper portion of the silicon oxide layer. A dielectric layer is formed on the silicon oxide layer where the nitridation reactant is formed. The dielectric layer is annealed. According to the foregoing method, recession of the dielectric layer is prevented to fabricate a high-quality semiconductor device.

    摘要翻译: 形成半导体器件的方法包括制备具有凹陷区域的衬底。 在凹陷区域形成氧化硅层。 对氧化硅层的上部进行催化氮化处理,以在氧化硅层的上部形成氮化反应物。 在形成氮化反应物的氧化硅层上形成介电层。 电介质层退火。 根据上述方法,防止了电介质层的凹陷以制造高质量的半导体器件。

    SEMICONDUCTOR DEVICES WITH AN AIR GAP IN TRENCH ISOLATION DIELECTRIC
    5.
    发明申请
    SEMICONDUCTOR DEVICES WITH AN AIR GAP IN TRENCH ISOLATION DIELECTRIC 审中-公开
    具有气隙隔离绝缘电介质的半导体器件

    公开(公告)号:US20100230741A1

    公开(公告)日:2010-09-16

    申请号:US12711033

    申请日:2010-02-23

    IPC分类号: H01L29/792 H01L29/06

    摘要: A tunnel insulating layer and a charge storage layer are sequentially stacked on a substrate. A recess region penetrates the charge storage layer, the tunnel insulating layer and a portion of the substrate. The recess region is defined by a bottom surface and a side surface extending from the bottom surface. A first dielectric pattern includes a bottom portion covering the bottom surface and inner walls extending from the bottom portion and covering a portion of the side surface of the recess region. A second dielectric pattern is in the recess region between the inner walls of the first dielectric pattern, and the second dielectric pattern enclosing an air gap. The air gap that is enclosed by the second dielectric pattern may extend through a major portion of the second dielectric pattern in a direction away from the bottom surface of the recess region.

    摘要翻译: 隧道绝缘层和电荷存储层依次层叠在基板上。 凹陷区域穿透电荷存储层,隧道绝缘层和基底的一部分。 凹陷区域由底表面和从底表面延伸的侧表面限定。 第一电介质图案包括覆盖底面的底部和从底部延伸并覆盖凹部区域的侧表面的一部分的内壁。 第二电介质图案位于第一电介质图案的内壁之间的凹陷区域中,并且第二电介质图案包围气隙。 由第二电介质图案包围的空气间隙可以沿着远离凹部区域的底表面的方向延伸穿过第二电介质图案的主要部分。