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公开(公告)号:US20230136036A1
公开(公告)日:2023-05-04
申请号:US17998489
申请日:2021-05-10
Applicant: Lam Research Corporation
Inventor: Stephen M. SIRARD , Gregory BLACHUT , Diane HYMES
IPC: H01L21/311
Abstract: Removing a stimuli responsive polymer (SRP) from a substrate includes controlled degradation. In certain embodiments of the methods described herein, removing SRPs includes exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP. The exposure occurs sequentially to provide more precise top down control. In some embodiments, the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving the remaining SRP intact. The exposure and removal cycles are repeated.
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公开(公告)号:US20190015878A1
公开(公告)日:2019-01-17
申请号:US16017445
申请日:2018-06-25
Applicant: LAM RESEARCH CORPORATION
Inventor: Mark KAWAGUCHI , Gregory BLACHUT
Abstract: A method for cleaning a substrate includes supplying a vapor to a processing chamber to grow a polymer film on a substrate in the processing chamber; adding a solution to the polymer film on the substrate to create a viscoelastic fluid on the substrate; and removing the viscoelastic fluid to remove particle contaminants from the substrate.
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公开(公告)号:US20220301859A1
公开(公告)日:2022-09-22
申请号:US17639850
申请日:2020-09-01
Applicant: Lam Research Corporation
Inventor: Gregory BLACHUT , Diane HYMES , Stephen M. SIRARD
Abstract: Formulations for forming stimulus responsive polymers (SRPs) on semiconductor substrates include organic weak acids. Methods of protecting sensitive substrates including forming an SRP layer on sensitive substrates and forming one or more cap layers on the SRP layer.
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4.
公开(公告)号:US20240312778A1
公开(公告)日:2024-09-19
申请号:US18044336
申请日:2021-09-09
Applicant: Lam Research Corporation
Inventor: Stephen J. BANIK, II , Bryan L. BUCKALEW , Stephen M. SIRARD , Gregory BLACHUT , Ratchana LIMARY , Diane HYMES , Justin OBERST , Priyanka SURESH
CPC classification number: H01L21/02334 , G03F7/70008 , H01L21/02277 , H01L21/0228
Abstract: The present disclosure relates to use of a stimulus responsive polymer (SRP) as a capping material during direct metal-metal binding. Processes and layers employing an SRP are described herein.
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5.
公开(公告)号:US20230295412A1
公开(公告)日:2023-09-21
申请号:US18006552
申请日:2021-07-23
Applicant: Lam Research Corporation
Inventor: Stephen M. SIRARD , Gregory BLACHUT , Ratchana LIMARY , Diane HYMES , Yang PAN
CPC classification number: C08L61/18 , B05D1/005 , H01L21/56 , H01L23/3171 , H01L23/3178 , H01L23/293 , C08L2203/162 , C08L2203/206
Abstract: The present disclosure relates to a stimulus responsive polymer (SRP) that includes a homopolymer. Methods, films, and formulations employing an SRP are also described herein.
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公开(公告)号:US20230207305A1
公开(公告)日:2023-06-29
申请号:US17998479
申请日:2021-05-10
Applicant: Lam Research Corporation
Inventor: Stephen M. SIRARD , Gregory BLACHUT , Diane HYMES
CPC classification number: H01L21/02057 , H01J37/32357 , H01J37/32422 , B08B7/0035 , B08B7/0071 , B08B7/04 , B08B2220/04
Abstract: Removing stimulus responsive polymers (SRPs) includes exposure to high energy metastable species, generated in a noble gas plasma, at an elevated temperature. The metastable species have sufficient energies and lifetimes to scission bonds on the polymer or other residues. At temperatures greater than the ceiling temperature of the SRP, there is a strong thermodynamic driving force to revert to volatile monomers once bond scissioning has occurred. The metastable species are not chemically reactive and do not appreciably affect the underlying surface. The high energy metastable species are effective at removing residues that remain after exposure to other stimuli such as heat.
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7.
公开(公告)号:US20220328338A1
公开(公告)日:2022-10-13
申请号:US17639869
申请日:2020-09-01
Inventor: Gregory BLACHUT , Diane HYMES , Stephen M. SIRARD , Ratchana LIMARY , Christopher M. Bates
IPC: H01L21/683
Abstract: The present disclosure relates to methods of forming a film including small molecules. Such methods can optionally include removing such small molecules, such as by way of sublimation, evaporation, or conversion to a more volatile form.
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公开(公告)号:US20220197147A1
公开(公告)日:2022-06-23
申请号:US17595062
申请日:2020-05-15
Applicant: LAM RESEARCH CORPORATION
Inventor: Andrew LIANG , Nader SHAMMA , Rich WISE , Akhil SINGHAL , Arpan Pravin MAHOROWALA , Gregory BLACHUT , Dustin Zachary AUSTIN
IPC: G03F7/20
Abstract: A method for patterning a substrate includes providing a substrate, and depositing a multi-layer stack including N layers on the substrate. N is an integer greater than one. The N layers include N mean free paths for secondary electrons, respectively. The method includes depositing a photoresist layer on the multi-layer stack, wherein the N mean free paths converge in the photoresist layer. Another method for patterning a substrate includes providing a substrate and depositing a layer on the substrate. The layer includes varying mean free paths for secondary electrons. The method includes depositing a photoresist layer on the layer. The varying mean free paths for secondary electrons converge in the photoresist layer.
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