公开(公告)号：US12094739B2

公开(公告)日：2024-09-17

申请号：US17767248

申请日：2020-10-05

Applicant: LAM RESEARCH CORPORATION

Inventor： Adam Patrick Bateman ,  Travis R. Taylor

IPC: H01L21/67 ,  B08B5/02 ,  B08B13/00 ,  B08B15/04

CPC classification number: H01L21/67201 ,  B08B5/02 ,  B08B13/00 ,  B08B15/04

Abstract: A method for cleaning a load lock in a substrate processing system includes, in a first period, opening a first valve in fluid communication with a gas source to supply gas through a first vent into a gas volume of the load lock. The gas is supplied at a pressure and flow rate sufficient to disturb particles from surfaces of the load lock. The method includes, in a second period subsequent to the first period and with the first valve opened, opening a second valve in fluid communication with a pump and turning on the pump to flush the gas and particles from the gas volume of the load lock, and, in a third period subsequent to the second period, closing the first valve while continuing to pump the gas and the particles from the gas volume of the load lock via the second valve.

公开(公告)号：US10903065B2

公开(公告)日：2021-01-26

申请号：US15594118

申请日：2017-05-12

Applicant: Lam Research Corporation

Inventor： Travis R. Taylor ,  Adam Bateman ,  Todd A. Lopes ,  Sankaranarayanan Ravi ,  Silvia Aguilar ,  Derek Witkowicki

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: A chamber is formed to enclose a processing region. A passageway is configured to provide for entry of a substrate into the processing region and removal of the substrate from the processing region. A substrate support structure is disposed within the processing region and configured to support the substrate within the processing region. At least one gas input is configured to supply one or more gases to the processing region. At least one gas output is configured to exhaust gases from the processing region. A humidity control device is configured to control a relative humidity within the processing region. At least one heating device is disposed to provide temperature control of the substrate within the processing region. The processing region of the chamber is directly accessible from a substrate handling module configured to operate at atmospheric pressure.

公开(公告)号：US20180330942A1

公开(公告)日：2018-11-15

申请号：US15594118

申请日：2017-05-12

Applicant: Lam Research Corporation

Inventor： Travis R. Taylor ,  Adam Bateman ,  Todd A. Lopes ,  Sankaranarayanan Ravi ,  Silvia Aguilar ,  Derek Witkowicki

IPC: H01L21/02 ,  H01L21/67 ,  B08B5/02

CPC classification number: H01L21/02057 ,  B08B5/02 ,  H01L21/67023

Abstract: A chamber is formed to enclose a processing region. A passageway is configured to provide for entry of a substrate into the processing region and removal of the substrate from the processing region. A substrate support structure is disposed within the processing region and configured to support the substrate within the processing region. At least one gas input is configured to supply one or more gases to the processing region. At least one gas output is configured to exhaust gases from the processing region. A humidity control device is configured to control a relative humidity within the processing region. At least one heating device is disposed to provide temperature control of the substrate within the processing region. The processing region of the chamber is directly accessible from a substrate handling module configured to operate at atmospheric pressure.

公开(公告)号：US20160233114A1

公开(公告)日：2016-08-11

申请号：US14614736

申请日：2015-02-05

Applicant: LAM RESEARCH CORPORATION

Inventor： Travis R. Taylor

IPC: H01L21/67 ,  C23C14/50 ,  C23C14/24 ,  C23C16/44 ,  C23C16/458

CPC classification number: H01L21/6719 ,  C23C14/564 ,  C23C16/4404 ,  C23C16/4408 ,  C23C16/4581 ,  H01L21/67201

Abstract: A substrate processing system includes a chamber configured to process a semiconductor substrate. At least one surface of the chamber includes a high surface area finish. A purge/vent system is configured to selectively supply purge gas over the high surface area finish of the at least one surface to trap particles in the high surface area finish without opening the chamber. The high surface area finish on the at least one surface of the chamber has a porosity within a predetermined range from 30-60%. The porosity is defined by a normalized density of the high surface area finish relative to an underlying native bulk material of the at least one surface of the chamber.

Abstract translation: 衬底处理系统包括被配置为处理半导体衬底的腔室。 腔室的至少一个表面包括高的表面积。 吹扫/排气系统构造成选择性地将吹扫气体提供在至少一个表面的高表面积整理剂上，以在不打开室的情况下捕集高表面积的颗粒。 在室的至少一个表面上的高表面积光洁度具有在30-60％的预定范围内的孔隙率。 孔隙度由相对于室的至少一个表面的潜在的天然块状材料的高表面积光洁度的归一化密度定义。

公开(公告)号：US20180311707A1

公开(公告)日：2018-11-01

申请号：US15950658

申请日：2018-04-11

Applicant: LAM RESEARCH CORPORATION

Inventor： Travis R. Taylor ,  Adam Bateman

IPC: B08B5/02 ,  B08B7/00

Abstract: A method for cleaning a chamber of a substrate processing system includes maintaining the chamber at a first predetermined pressure and, without a substrate present within the chamber, providing, from a fluid source via a nozzle assembly, a fluid, and injecting the fluid into the chamber via the nozzle assembly. The fluid source is maintained at a second predetermined pressure that is greater than the first predetermined pressure. Injecting the fluid into the chamber maintained at the first predetermined pressure causes the fluid to aerosolize into a mixture of gas and solid particles.

公开(公告)号：US09335248B1

公开(公告)日：2016-05-10

申请号：US14639275

申请日：2015-03-05

Applicant: Lam Research Corporation

Inventor： Travis R. Taylor

IPC: G01N15/14

CPC classification number: G01N15/1434 ,  G01N15/1012 ,  G01N2015/1486

Abstract: A method for diagnosing a particle removal system of a substrate processing system includes dispersing synthetic particles onto a substrate; exciting the synthetic particles using a light source having a first predetermined wavelength; measuring photoluminescence of the synthetic particles at a second predetermined wavelength that is different than the first predetermined wavelength and determining a first number of the synthetic particles on the substrate; at least one of moving the substrate through a chamber or processing the substrate in the chamber of the substrate processing system; exciting the synthetic particles using light having the first predetermined wavelength; measuring photoluminescence of the synthetic particles at the second predetermined wavelength that is different than the first predetermined wavelength; and determining a second number of the synthetic particles on the substrate based on the measuring.

Abstract translation: 用于诊断基板处理系统的颗粒去除系统的方法包括将合成颗粒分散在基板上; 使用具有第一预定波长的光源激发合成颗粒; 以不同于所述第一预定波长的第二预定波长测量所述合成颗粒的光致发光并确定所述基板上的第一数目的所述合成颗粒; 将衬底移动通过腔室或处理衬底处理系统的腔室中的至少一个; 使用具有第一预定波长的光激发合成颗粒; 测量与第一预定波长不同的第二预定波长的合成颗粒的光致发光; 以及基于所述测量确定所述基板上的所述合成颗粒的第二数量。

公开(公告)号：US20140367047A1

公开(公告)日：2014-12-18

申请号：US14470507

申请日：2014-08-27

Applicant: Lam Research Corporation

Inventor： Michael S. Kang ,  Michael C. Kellogg ,  Miguel A. Saldana ,  Travis R. Taylor

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32091

Abstract: An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.

Abstract translation: 用于等离子体蚀刻室的边缘环组件包括电介质耦合环和导电边缘环。 在一个实施例中，电介质耦合环具有从其内周向轴向上延伸的环形突起。 电介质耦合环适于围绕等离子体蚀刻室中的衬底支撑件。 导电边缘环适于围绕电介质耦合环的环形突起。 支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在介质耦合环的环形突起和导电边缘环的一部分上。 在另一个实施例中，电介质耦合环具有矩形横截面。 电介质耦合环和导电边缘环适于围绕等离子体蚀刻室中的衬底支撑。 支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在导电边缘环的一部分上。