公开(公告)号：US20140197426A1

公开(公告)日：2014-07-17

申请号：US13856872

申请日：2013-04-04

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Fu-Shin Chen ,  Li-Cheng Yang ,  Yu-Chun Lee

IPC: H01L27/15

CPC classification number: H01L33/44 ,  H01L33/50

Abstract: A light emitting diode chip structure includes a substrate, a mesa type light emitting diode structure, and an electroluminescent layer. The mesa type light emitting diode structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The mesa type light emitting diode structure is formed on the substrate. The first semiconductor layer is formed on the substrate. The light emitting layer is formed on a portion of the first semiconductor layer, and a portion of the first semiconductor layer is uncovered. The second semiconductor layer is formed on the light emitting layer. The electroluminescent layer is formed on the second semiconductor layer. Furthermore, a light emitting diode element is also disclosed herein.

Abstract translation: 发光二极管芯片结构包括基板，台面型发光二极管结构和电致发光层。 台面型发光二极管结构包括第一半导体层，发光层和第二半导体层。 在基板上形成台面型发光二极管结构。 第一半导体层形成在基板上。 发光层形成在第一半导体层的一部分上，第一半导体层的一部分未被覆盖。 第二半导体层形成在发光层上。 电致发光层形成在第二半导体层上。 此外，本文还公开了发光二极管元件。

公开(公告)号：US20140077241A1

公开(公告)日：2014-03-20

申请号：US13759499

申请日：2013-02-05

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Fu-Shin Chen ,  Jia-Ming Sung

IPC: H01L33/50 ,  H01L33/60

CPC classification number: H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/00014

Abstract: A Light emitting diode (LED) includes a substrate, a LED chip, a wavelength conversion layer, a lens and a reflective layer. The LED chip is mounted on the substrate. The wavelength conversion layer covers the top surface of the LED chip and exposes the lateral surface of the LED chip. The lens is disposed on the substrate and encloses the LED chip and the wavelength conversion layer. The reflective layer is disposed on the lens for reflecting the light emitted from the lateral surface of the LED chip.

Abstract translation: 发光二极管（LED）包括基板，LED芯片，波长转换层，透镜和反射层。 LED芯片安装在基板上。 波长转换层覆盖LED芯片的顶表面并暴露LED芯片的侧表面。 透镜设置在基板上并包围LED芯片和波长转换层。 反射层设置在透镜上用于反射从LED芯片的侧表面发射的光。

公开(公告)号：US08674378B1

公开(公告)日：2014-03-18

申请号：US13759499

申请日：2013-02-05

Applicant: Lextar Electronics Corporation

Inventor： Fu-Shin Chen ,  Jia-Ming Sung

IPC: H01L21/33

CPC classification number: H01L33/50 ,  H01L33/58 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/00014

Abstract: A Light emitting diode (LED) includes a substrate, a LED chip, a wavelength conversion layer, a lens and a reflective layer. The LED chip is mounted on the substrate. The wavelength conversion layer covers the top surface of the LED chip and exposes the lateral surface of the LED chip. The lens is disposed on the substrate and encloses the LED chip and the wavelength conversion layer. The reflective layer is disposed on the lens for reflecting the light emitted from the lateral surface of the LED chip.

Abstract translation: 发光二极管（LED）包括基板，LED芯片，波长转换层，透镜和反射层。 LED芯片安装在基板上。 波长转换层覆盖LED芯片的顶表面并暴露LED芯片的侧表面。 透镜设置在基板上并包围LED芯片和波长转换层。 反射层设置在透镜上用于反射从LED芯片的侧表面发射的光。