公开(公告)号：US20150137158A1

公开(公告)日：2015-05-21

申请号：US14281771

申请日：2014-05-19

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Tsung-Han LI ,  Cheng-Ping CHANG

IPC: H01L33/62 ,  H01L33/54 ,  H01L33/50

CPC classification number: H01L33/62

Abstract: A light-emitting diode (LED) package frame is provided, including a leadframe and an insulating member. The leadframe includes a first electrode and a second electrode separated from each other. The insulating member is disposed between the first electrode and the second electrode for insulation between the first and second electrodes, including a first protrusion and a second protrusion. The coefficient of thermal expansion of the insulating member is greater than that of the leadframe. Specifically, the first electrode and the second electrode respectively include a first recess and a second recess which abut the insulating member. The first protrusion and the second protrusion are respectively engaged with the first recess and the second recess.

Abstract translation: 提供了包括引线框架和绝缘构件的发光二极管（LED）封装框架。 引线框架包括彼此分离的第一电极和第二电极。 绝缘构件设置在第一电极和第二电极之间，用于第一和第二电极之间的绝缘，包括第一突起和第二突起。 绝缘构件的热膨胀系数大于引线框架的热膨胀系数。 具体地，第一电极和第二电极分别包括抵接绝缘构件的第一凹部和第二凹部。 第一突起和第二突起分别与第一凹部和第二凹部接合。

公开(公告)号：US20140361325A1

公开(公告)日：2014-12-11

申请号：US14279252

申请日：2014-05-15

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Tsung-Han LI ,  Lei-Hsing LIU ,  Chih-Tsang WEI

IPC: H01L33/50 ,  H01L33/62 ,  H01L33/56

CPC classification number: H01L33/507 ,  H01L33/486 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0041 ,  H01L2933/005 ,  H01L2924/00014

Abstract: A package structure and methods for forming the package structure are provided. The package structure includes a lead frame having a chip bonding area and a shell surrounding a portion of the lead frame. The shell has an inner surface and an outer surface opposite to the inner surface. A cavity is recessed from the inner surface, and the chip bonding area is exposed from the cavity. The structure further includes a light emitting diode chip disposed over the chip bonding area and a first glue layer disposed in the cavity to cover the light emitting diode chip. A separation film is disposed on the first glue layer in the cavity and a second glue layer disposed on the separation film in the cavity. The second glue layer contains a wavelength conversion material and the first glue layer does not contain any wavelength conversion material.

Abstract translation: 提供了用于形成封装结构的封装结构和方法。 封装结构包括具有芯片接合区域的引线框架和围绕引线框架的一部分的壳体。 壳体具有内表面和与内表面相对的外表面。 腔从内表面凹陷，并且芯片接合区域从腔体露出。 该结构还包括设置在芯片接合区域上的发光二极管芯片和设置在空腔中以覆盖发光二极管芯片的第一胶合层。 分离膜设置在空腔中的第一胶层上，第二胶层设置在空腔中的分离膜上。 第二胶层包含波长转换材料，第一胶层不含任何波长转换材料。