公开(公告)号：US20220139318A1

公开(公告)日：2022-05-05

申请号：US17408136

申请日：2021-08-20

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu KANG ,  SeungChan CHOI

IPC: G09G3/3233

Abstract: Embodiments of the present disclosure relate to a display device and a driving method of the display device. More particularly, a subpixel includes a first control transistor for controlling a connection between a body of a driving transistor and a first node of the driving transistor, and a second control transistor for controlling a connection between the body of the driving transistor and a second node of the driving transistor, so that it is possible to improve mobility and on-current performance while increasing a S-factor of the driving transistor.

公开(公告)号：US20230127842A1

公开(公告)日：2023-04-27

申请号：US17970576

申请日：2022-10-21

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu KANG ,  Younghyun KO ,  HongRak CHOI

IPC: H01L27/12

Abstract: A thin film transistor substrate and a display device including the same are provided. The thin film transistor substrate includes a first thin film transistor and a second thin film transistor on a base substrate, wherein the first thin film transistor includes a first active layer on the base substrate, a first conductive material layer on the first active layer, and a first gate electrode spaced apart from the first active layer and at least partially overlapped with the first active layer, and the second thin film transistor includes a second active layer on the base substrate, a second conductive material layer on the second active layer, and a second gate electrode spaced apart from the second active layer and at least partially overlapped with the second active layer.

公开(公告)号：US20220189403A1

公开(公告)日：2022-06-16

申请号：US17404721

申请日：2021-08-17

Applicant: LG DISPLAY CO., LTD.

Inventor： Min-Gu KANG ,  SeungChan CHOI ,  Younghyun KO

IPC: G09G3/3258 ,  G09G3/3291

Abstract: A display device and a driving method for a display device are provided. The display device uses a second storage capacitor and stably moves the threshold voltage of the driving transistor to a positive value in a diode-connected driving circuit. Accordingly, a compensation performance of a threshold voltage of a driving transistor may be improved.

公开(公告)号：US20180151827A1

公开(公告)日：2018-05-31

申请号：US15825012

申请日：2017-11-28

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu KANG ,  DaeHwan KIM

IPC: H01L51/50 ,  H01L51/05 ,  H01L51/52

CPC classification number: H01L51/5096 ,  H01L27/3272 ,  H01L51/0554 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5237 ,  H01L51/5284 ,  H01L51/5296 ,  H01L51/56

Abstract: Disclosed are an organic light emitting display panel and an organic light emitting display device including the same, which include a blocking layer for blocking the inflow of scattered light, transferred from an organic light emitting diode, into a driving transistor. The organic light emitting display panel includes a substrate, a driving transistor provided on the substrate, a first insulation layer covering the driving transistor, a second insulation layer covering the first insulation layer, a first electrode provided on the second insulation layer and connected to a first conductor part of the driving transistor, a second electrode provided on the second insulation layer and connected to a second conductor part of the driving transistor, a passivation layer covering the first electrode, the second electrode, and the second insulation layer, and an organic light emitting diode provided on the passivation layer. An anode configuring the organic light emitting diode is connected to the first conductor part, and the anode protrudes convexly from an upper surface of the passivation layer.

公开(公告)号：US20240224592A1

公开(公告)日：2024-07-04

申请号：US18454273

申请日：2023-08-23

Applicant: LG Display Co., Ltd.

Inventor： DaeHwan KIM ,  Jaeman JANG ,  Uyhyun CHOI ,  Min-Gu KANG ,  KyungChul OK ,  SeungChan CHOI

IPC: H10K59/121 ,  G09G3/3233 ,  H10K59/12 ,  H10K59/126

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K59/1201 ,  H10K59/126 ,  G09G2300/0842

Abstract: A thin film transistor, a manufacturing method of the thin film transistor and display apparatus including the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode that partially overlaps the active layer, wherein the active layer includes a channel portion, a first connection portion contacting one side, namely a first side, of the channel portion and a second connection portion spaced apart from the first connection portion and contacting the other side, namely a second side of the channel portion, wherein the channel portion includes a first channel part overlapping the gate electrode and a second channel part not overlapping the gate electrode.

公开(公告)号：US20230111218A1

公开(公告)日：2023-04-13

申请号：US17963101

申请日：2022-10-10

Applicant: LG Display Co., Ltd.

Inventor： Min-Gu KANG ,  Younghyun KO ,  SeungChan CHOI ,  Jaeman JANG

IPC: H01L29/786 ,  H01L27/32 ,  H01L27/12

Abstract: A thin film transistor and a display device comprising the same are provided. The thin film transistor comprises an active layer, and a gate electrode at least partially overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion that is in contact with one side of the channel portion, and a second connection portion that is in contact with the other side of the channel portion, the channel portion includes a first channel area and a second channel area, each of the first channel area and the second channel area is extended from the first connection portion to the second connection portion, and a length of the first channel area is shorter than that of the second channel area.

公开(公告)号：US20220399464A1

公开(公告)日：2022-12-15

申请号：US17751975

申请日：2022-05-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Younghyun KO ,  SeungChan CHOI ,  Min-Gu KANG ,  Jaeman JANG

IPC: H01L29/786 ,  H01L27/32

Abstract: A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from the second source electrode and connected to the second active layer, and the conductive material layer is connected to the second source electrode and overlaps the second channel portion. Also, a display device comprising the thin film transistor substrate is provided.