公开(公告)号：US20180083220A1

公开(公告)日：2018-03-22

申请号：US15563087

申请日：2016-04-15

Applicant: LG ELECTRONICS INC. ,  SNU R&DB FOUNDATION

Inventor： Jinsan MOON ,  Wonbae PARK ,  Subeom PARK ,  Insu JO ,  Byunghee HONG

IPC: H01L51/52 ,  H01L51/00 ,  H01L51/56 ,  H01B1/04 ,  C23C16/511 ,  C23C16/26

CPC classification number: H01L51/5215 ,  C01B32/20 ,  C23C16/26 ,  C23C16/511 ,  H01B1/04 ,  H01L21/283 ,  H01L29/16 ,  H01L51/0021 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/56 ,  H01L2251/5338

Abstract: The present invention relates to graphene and, particularly, to a method for doping graphene using substrate surface modification, a method for manufacturing a graphene composite electrode using graphene and inorganic matter, and a graphene structure comprising the same. The method for doping graphene according to an embodiment of the present invention may comprise the steps of: forming, on a substrate, a precursor polymer layer for doping; and positioning graphene on the substrate on which the precursor polymer layer is formed. In addition, the method for manufacturing a graphene composite electrode according to an embodiment of the present invention may comprise the steps of: forming graphene on catalyst metal; forming a transparent conductive oxide on the graphene; crystallizing the transparent conductive oxide by applying heat of 150° C. or higher; and transferring, to a final substrate, a composite electrode consisting of the graphene and the transparent conductive oxide.

公开(公告)号：US20150368109A1

公开(公告)日：2015-12-24

申请号：US14423463

申请日：2013-08-01

Applicant: LG ELECTRONICS INC.

Inventor： Jinsan MOON ,  Jonghyun RHO ,  Subeom PARK ,  Taehyeong KIM ,  Byunghee HONG ,  Wonbae PARK ,  Myunghee JUNG

IPC: C01B31/04 ,  C23C16/455 ,  C23C16/26

CPC classification number: C01B32/186 ,  C23C16/0209 ,  C23C16/26 ,  C23C16/44

Abstract: The present invention provides a method for manufacturing graphene, said graphene, and an apparatus for manufacturing same. The method for manufacturing graphene comprises the steps of: loading a catalytic metal layer into a chamber; applying tensile force to the catalytic metal layer; and forming graphene on the catalytic metal layer by supplying a carbon source into the chamber while the tension is applied to the catalytic metal layer. Therefore, the size of the grains on the catalytic metal layer can be increased by applying tension to the catalytic metal layer, and high quality uniform graphene can be grown through the use of the catalytic metal layer.

Abstract translation: 本发明提供一种石墨烯的制造方法，所述石墨烯及其制造装置。 制造石墨烯的方法包括以下步骤：将催化金属层装入室中; 对催化金属层施加张力; 以及通过在向所述催化金属层施加张力的同时向所述室中供应碳源而在所述催化金属层上形成石墨烯。 因此，可以通过向催化金属层施加张力来增加催化金属层上的颗粒的尺寸，并且可以通过使用催化金属层生长高质量均匀的石墨烯。