公开(公告)号：US20160211403A1

公开(公告)日：2016-07-21

申请号：US14997196

申请日：2016-01-15

Applicant: LG ELECTRONICS INC.

Inventor： Mann YI ,  Jeongkyu KIM ,  Jinsung KIM

IPC: H01L31/18 ,  H01L31/0216

CPC classification number: H01L31/18 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for manufacturing a solar cell is disclosed. The disclosed method includes conductive region formation of forming a first-conduction-type region at one surface of a semiconductor substrate and a second-conduction-type region at another surface of the semiconductor substrate, and electrode formation of forming a first electrode connected to the first-conduction-type region and a second electrode connected to the second-conduction-type region. In the conductive region formation, the first-conduction-type region is formed by forming a dopant layer containing a first-conduction-type dopant over the one surface of the semiconductor substrate, and heat-treating the dopant layer, and the second-conduction-type region is formed by ion-implanting a second-conduction-type dopant into the semiconductor substrate at the another surface of the semiconductor substrate.

Abstract translation: 公开了一种制造太阳能电池的方法。 所公开的方法包括在半导体衬底的一个表面处形成第一导电类型区域的导电区域形成和在半导体衬底的另一表面处的第二导电类型区域，以及形成连接到半导体衬底的第一电极的电极形成 第一导电型区域和与第二导电型区域连接的第二电极。 在导电区形成中，通过在半导体衬底的一个表面上形成含有第一导电型掺杂剂的掺杂剂层，并对掺杂剂层进行热处理，形成第一导电型区域 型区域通过在半导体衬底的另一个表面处将半导体衬底中的第二导电型掺杂剂离子注入而形成。

公开(公告)号：US20140065757A1

公开(公告)日：2014-03-06

申请号：US13890931

申请日：2013-05-09

Applicant: LG Electronics Inc.

Inventor： Mann YI ,  Jeonghyo KWON ,  Seongeun LEE ,  Taeyoung KWON

IPC: H01L31/0236

CPC classification number: H01L31/0236 ,  H01L21/02054 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02363 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

Abstract: A method for manufacturing a solar cell includes performing a dry etching process to form a textured surface including a plurality of minute protrusions on a first surface of a semiconductor substrate, performing a first cleansing process for removing damaged portions of surfaces of the minute protrusions using a basic chemical and removing impurities adsorbed on the surfaces of the minute protrusions, performing a second cleansing process for removing impurities remaining or again adsorbed on the surfaces of the minute protrusions using an acid chemical after performing the first cleansing process, and forming an emitter region at the first surface of the semiconductor substrate.

Abstract translation: 一种制造太阳能电池的方法包括：在半导体衬底的第一表面上进行干蚀刻工艺以形成包括多个微小突起的纹理化表面，使用第一清洁工艺去除微小突起的损伤部分， 基本化学和去除吸附在微小突起表面上的杂质，进行第二次清洁处理，以在第一次清洁处理之后，使用酸性化学品除去残留或再次吸附在微小突起的表面上的杂质，以及形成发射极区域 半导体衬底的第一表面。

公开(公告)号：US20170047459A1

公开(公告)日：2017-02-16

申请号：US15235955

申请日：2016-08-12

Applicant: LG ELECTRONICS INC.

Inventor： Mann YI ,  Daeyong LEE ,  Jeongkyu KIM ,  Junyong AHN

IPC: H01L31/0392 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/03921 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/028 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method for manufacturing the same are disclosed. The method for manufacturing the solar cell includes injecting impurities of a second conductive type opposite a first conductive type into an entire first surface of a semiconductor substrate containing impurities of the first conductive type, the semiconductor substrate having the first surface, a side surface, and a second surface opposite the first surface, forming a doping barrier layer on the entire first surface and the entire side surface of the semiconductor substrate, and at an edge portion of the second surface of the semiconductor substrate, injecting the impurities of the first conductive type into the second surface of the semiconductor substrate at which the doping barrier layer is not formed, at a higher concentration than the semiconductor substrate, performing a thermal process on the semiconductor substrate to simultaneously form an emitter region of the second conductive type at the entire first and side surfaces of the semiconductor substrate and a back surface field region of the first conductive type at the second surface of the semiconductor substrate, and removing the doping barrier layer.

Abstract translation: 公开了一种太阳能电池及其制造方法。 制造太阳能电池的方法包括将含有第一导电类型的第二导电类型的杂质注入包含第一导电类型的杂质的半导体衬底的整个第一表面，具有第一表面的半导体衬底，侧表面和 与第一表面相对的第二表面，在半导体衬底的整个第一表面和整个侧表面上形成掺杂阻挡层，并且在半导体衬底的第二表面的边缘部分处，注入第一导电类型的杂质 在没有形成掺杂阻挡层的半导体衬底的第二表面中，以比半导体衬底更高的浓度进行热处理，在半导体衬底上进行热处理，同时在整个第一衬底上形成第二导电类型的发射极区 和半导体衬底的侧表面和背面fie 在该半导体衬底的第二表面处的第一导电类型的区域，以及去除该掺杂阻挡层。

公开(公告)号：US20170012148A1

公开(公告)日：2017-01-12

申请号：US15204447

申请日：2016-07-07

Applicant: LG ELECTRONICS INC.

Inventor： Daeyong LEE ,  Junyong AHN ,  Mann YI ,  Jeongkyu KIM

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0224

CPC classification number: H01L31/03529 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: Disclosed is method of manufacturing a solar cell including forming a barrier film over at least one surface of a semiconductor substrate or a semiconductor layer, forming a first conductive area on the at least one surface of the semiconductor substrate or the semiconductor layer via ion implantation of a first conductive dopant through the barrier film, and removing the barrier film.

Abstract translation: 公开了一种制造太阳能电池的方法，包括在半导体衬底或半导体层的至少一个表面上形成阻挡膜，通过离子注入在半导体衬底或半导体层的至少一个表面上形成第一导电区域 通过阻挡膜的第一导电掺杂剂，并去除阻挡膜。