公开(公告)号：US10784385B2

公开(公告)日：2020-09-22

申请号：US14341637

申请日：2014-07-25

Applicant: LG ELECTRONICS INC.

Inventor： Chulchae Choi ,  Changseo Park ,  Jinsung Kim ,  Jaewon Chang ,  Hyungseok Kim ,  Youngho Choe ,  Philwon Yoon

IPC: H01L31/0224 ,  H01L31/05 ,  H01L31/049 ,  H01L31/068

Abstract: A solar cell is disclosed. The solar cell includes a substrate of a first conductive type; a plurality of emitter layers having a second conductive type opposite the first conductive type, the plurality of emitter layers positioned in a first surface of the substrate and extended in a first direction in the first surface of the substrate; a plurality of surface field layers having the first conductive type more heavily doped than the substrate, the plurality of surface field layers positioned in the first surface of the substrate and extended in the first direction in the first surface of the substrate; a passivation layer positioned on the first surface of the substrate and including a plurality of first openings exposing portions of each of the plurality of surface field layers and a plurality of second openings exposing portions of each of the plurality of emitter layers; a plurality of first electrodes positioned in the plurality of first openings and contacting the plurality of surface field layers; a plurality of second electrodes positioned in the plurality of second openings and contacting the plurality of emitter layers; a plurality of first conductive members positioned on the plurality of first electrodes; and a plurality of second conductive members positioned on the plurality of second electrodes.

公开(公告)号：US10446697B2

公开(公告)日：2019-10-15

申请号：US15443331

申请日：2017-02-27

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Yoonsil Jin ,  Youngho Choe

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

Abstract: A bifacial solar cell includes a substrate of an n-type; an emitter layer positioned on a first surface of the substrate; a plurality of first electrodes locally positioned on the emitter layer and electrically connected to the emitter layer; a first passivation layer positioned on the emitter layer; a silicon oxide layer formed at an interface between the first passivation layer and the emitter layer, the silicon oxide layer having a thickness of about 1 nm to 3 nm; a first anti-reflection layer positioned on the first passivation layer; a plurality of back surface field layers locally positioned on a second surface of the substrate; a plurality of second electrodes respectively positioned on the plurality of back surface field layers and electrically connected to the plurality of back surface field layers; and a second passivation layer positioned on the second surface of the substrate.

公开(公告)号：US10153390B2

公开(公告)日：2018-12-11

申请号：US15868076

申请日：2018-01-11

Applicant: LG ELECTRONICS INC.

Inventor： Jaewon Chang ,  Youngho Choe

IPC: H01L31/068 ,  H01L31/0224 ,  H01L31/0236

Abstract: A bifacial solar cell includes a substrate; a first conductive type region having a conductive type different from a conductive type of the substrate; a first insulating layer formed on the first conductive type region; a plurality of first electrodes contacting the first conductive type region through the first insulating layer and extended in a first direction; a plurality of first current collectors extended in a second direction crossing the first direction, wherein the plurality of first current collectors are electrically and physically connected to the plurality of first electrodes; a second conductive type region having a conductive type the same as the conductive type of the substrate, and having an impurity concentration that is higher than an impurity concentration of the substrate; a second insulating layer formed on the second conductive type region; a plurality of second electrodes contacting the second conductive type region through the second insulating layer and extended in the first direction; and a plurality of second current collectors extended in the second direction.

公开(公告)号：US09525098B2

公开(公告)日：2016-12-20

申请号：US14301183

申请日：2014-06-10

Applicant: LG ELECTRONICS INC.

Inventor： Sungeun Lee ,  Youngho Choe

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/00

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell and a method of manufacturing a solar cell are disclosed. The solar cell includes forming a first doped region of a first conductive type and a second doped region of a second conductive type opposite the first conductive type on a semiconductor substrate of the first conductive type; forming a passivation layer on the semiconductor substrate to expose a portion of each of the first and second doped regions; and forming a first electrode electrically connected to the first doped region and a second electrode electrically connected to the second doped region, wherein the forming of the first and second electrodes includes forming a metal seed layer directly contacting the first doped region and a metal seed layer directly contacting the second doped region, and forming a conductive layer on the metal seed layer of each of the first and second electrodes.

Abstract translation: 公开了一种太阳能电池和太阳能电池的制造方法。 太阳能电池包括在第一导电类型的半导体衬底上形成第一导电类型的第一掺杂区域和与第一导电类型相反的第二导电类型的第二掺杂区域; 在所述半导体衬底上形成钝化层以暴露所述第一和第二掺杂区域中的每一个的一部分; 以及形成电连接到所述第一掺杂区的第一电极和与所述第二掺杂区电连接的第二电极，其中所述第一和第二电极的形成包括形成直接接触所述第一掺杂区域的金属种子层和金属种子层 直接接触所述第二掺杂区域，以及在所述第一和第二电极中的每一个的所述金属籽晶层上形成导电层。

公开(公告)号：US11251319B2

公开(公告)日：2022-02-15

申请号：US16196742

申请日：2018-11-20

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Youngho Choe

IPC: H01L31/0224 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18

Abstract: A method for fabricating a solar cell, includes forming an emitter layer by doping a first impurity having a second conductivity type, opposite a first conductivity type, on a front surface of a substrate having the first conductivity type; forming a back surface field by doping a second impurity having the first conductivity type on a rear surface of the substrate; and forming a plurality of front finger lines in contact with the emitter layer and a plurality of rear finger lines in contact with the back surface field, wherein the emitter layer has a selective emitter structure, the back surface field has a selective back surface field structure, and the number of the plurality of rear finger lines positioned on the rear surface of the substrate is different from the number of the plurality of front finger lines positioned on a front surface of the substrate.

公开(公告)号：US10224441B2

公开(公告)日：2019-03-05

申请号：US15174500

申请日：2016-06-06

Applicant: LG ELECTRONICS INC.

Inventor： Sungeun Lee ,  Youngho Choe

IPC: H01L31/068 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18 ,  H01L31/0216

Abstract: A solar cell includes a semiconductor substrate of a first conductive type and includes a first side and a second side, the second side having a textured structure formed on the entire second side; a first doped region of the first conductive type and a second doped region of a second conductive type on the first side; a first passivation layer on the first doped region and the second doped region and exposing a portion of a back surface of each of the first and second doped regions, the first passivation layer being formed of silicon nitride (SiNx), silicon dioxide (SiOx), or a combination thereof; a second passivation layer on the second side; an anti-reflection layer on the second passivation layer; and a first electrode electrically connected to the first doped region and a second electrode electrically connected to the second doped region.

公开(公告)号：US10043933B2

公开(公告)日：2018-08-07

申请号：US14716619

申请日：2015-05-19

Applicant: LG Electronics Inc.

Inventor： Sunyoung Kim ,  Choul Kim ,  Youngho Choe ,  Sungeun Lee

IPC: H01L31/068 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0216

Abstract: A solar cell and a method for manufacturing the same are discussed. The solar cell can include a semiconductor layer containing first impurities and having a front surface and a back surface, the front surface being a light incident surface, a first portion on the back surface of the semiconductor layer, the first portion being more heavily doped with second impurities different from the first impurities than the semiconductor layer, and forming a p-n junction with the semiconductor layer, a second portion on the back surface of the semiconductor layer, the second portion being more heavily doped with the first impurities than the semiconductor layer, a third portion on the back surface of the semiconductor layer between the first portion and the second portion, a first electrode on the back surface of the semiconductor layer and connected to the first portion, a second electrode on the back surface of the semiconductor layer and connected to the second portion, and a passivation layer on the back surface of the semiconductor layer and contacting the first portion.

公开(公告)号：US09577138B2

公开(公告)日：2017-02-21

申请号：US14841159

申请日：2015-08-31

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Hyunjung Park ,  Youngho Choe ,  Changseo Park

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/035272 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract translation: 太阳能电池被形成为具有第一导电类型的硅半导体衬底; 具有与第一导电类型相反并形成在硅半导体衬底的第一表面上的第二导电类型的发射极层; 具有第一导电类型并形成在与第一表面相对的硅半导体衬底的第二表面上的背表面场层; 并且其中所述发射极层包括至少第一浅掺杂区域，并且所述背表面场层包括至少第二浅掺杂区域，并且其中所述发射极层的所述第一浅掺杂区域的厚度不同于所述第二浅掺杂区域的厚度 背面场层的浅掺杂区域。

公开(公告)号：US09385261B2

公开(公告)日：2016-07-05

申请号：US14301183

申请日：2014-06-10

Applicant: LG ELECTRONICS INC.

Inventor： Sungeun Lee ,  Youngho Choe

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/00

Abstract: A solar cell and a method of manufacturing a solar cell are disclosed. The solar cell includes forming a first doped region of a first conductive type and a second doped region of a second conductive type opposite the first conductive type on a semiconductor substrate of the first conductive type; forming a passivation layer on the semiconductor substrate to expose a portion of each of the first and second doped regions; and forming a first electrode electrically connected to the first doped region and a second electrode electrically connected to the second doped region, wherein the forming of the first and second electrodes includes forming a metal seed layer directly contacting the first doped region and a metal seed layer directly contacting the second doped region, and forming a conductive layer on the metal seed layer of each of the first and second electrodes.

公开(公告)号：US09076905B2

公开(公告)日：2015-07-07

申请号：US14041907

申请日：2013-12-18

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Goohwan Shim ,  Youngho Choe ,  Changseo Park

IPC: H01L21/00 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract translation: 半导体器件包括衬底和第一绝缘层。 第一绝缘层包括第一下层和第一下层上的第一上层。 第一绝缘层具有穿过第一下层和第一上层的第一开口。 第一下层的第一开口的最大宽度不同于第一上层的第一开口的最大宽度。