公开(公告)号：US10381519B2

公开(公告)日：2019-08-13

申请号：US15550955

申请日：2016-03-16

Applicant: LG INNOTEK CO., LTD.

Inventor： Jae Won Seo ,  Hoe Jun Kim ,  Bum Jin Yim ,  Jun Hee Hong

IPC: H01L33/44 ,  H01L33/62 ,  H01L33/38 ,  H01L33/32 ,  H01L33/40 ,  H01L33/14

Abstract: A light emitting device package, according to an embodiment, includes: a substrate; a light emitting structure that is disposed below the substrate and includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first bonding pad connected with the first conductive type semiconductor layer while being embedded in a through-hole exposed the first conductive type semiconductor layer by passing through the active layer and the second conductive type semiconductor layer; a second bonding pad that is disposed below the second conductive type semiconductor layer while being spaced apart from the first bonding pad and is connected with the second conductive type semiconductor layer; a first insulation layer disposed on the lateral portion of the light emitting structure in the through-hole and on the lower inner edge of the light emitting structure; and a second insulation layer disposed between the first insulation layer and the first bonding pad in the through-hole.

公开(公告)号：US10109772B2

公开(公告)日：2018-10-23

申请号：US15053559

申请日：2016-02-25

Applicant: LG INNOTEK CO., LTD.

Inventor： Sung Ho Jung ,  Bum Jin Yim ,  Sang Youl Lee

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/44 ,  H01L33/42 ,  H01L33/62 ,  H01L33/38 ,  H01L33/48

Abstract: Disclosed are a light emitting device package and a lighting apparatus. The light emitting device package includes a substrate, a light emitting structure disposed under the substrate and including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer exposed through at least one contact hole, a second electrode connected to the second conductive type semiconductor layer, a first insulating layer configured to extend from under the light emitting structure to a space between a side of the light emitting structure and the first electrode and configured to reflect light, and a reflective layer disposed under the first insulating layer.

公开(公告)号：US10535804B2

公开(公告)日：2020-01-14

申请号：US15746211

申请日：2016-07-21

Applicant: LG INNOTEK CO., LTD.

Inventor： Bum Jin Yim

IPC: H01L33/46 ,  H01L33/40 ,  H01L33/62 ,  H01L33/38 ,  H01L33/42 ,  H01L33/50 ,  H01L33/56 ,  H01L33/44 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32

Abstract: A light-emitting device package of an embodiment includes a light-emitting structure including first and second conductive semiconductor layers and an active layer disposed between the first and second conductive semiconductor layers; a light-transmitting electrode layer disposed on the second conductive semiconductor layer; a passivation layer disposed on the second conductive semiconductor layer and a mesa-exposed portion of the first conductive semiconductor layer; a reflection layer disposed from the top of the light-transmitting electrode layer to the top of the passivation layer in a horizontal direction perpendicular to the thickness direction of the light-emitting structure; and a conductive capping layer disposed on the reflection layer.

公开(公告)号：US09559264B2

公开(公告)日：2017-01-31

申请号：US14922620

申请日：2015-10-26

Applicant: LG INNOTEK CO., LTD.

Inventor： Woo Sik Lim ,  Jae Won Seo ,  Bum Jin Yim

IPC: H01L33/40 ,  H01L33/42 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A light emitting device may include a substrate, a light emitting structure disposed under the substrate, the light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first electrode configured to penetrate the second conductive semiconductor layer and the active layer, so as to come into contact with the first conductive semiconductor layer, a contact layer configured to come into contact with the second conductive semiconductor layer, a first insulation layer disposed between the second conductive semiconductor layer and the first electrode and between the active layer and the first electrode, the first insulation layer being provided for capping of a side portion and an upper portion of the contact layer, and a second electrode configured to penetrate the first insulation layer, so as to come into contact with the contact layer.

Abstract translation: 发光器件可以包括衬底，设置在衬底下方的发光结构，发光结构包括第一导电半导体层，有源层和第二导电半导体层，第一电极被配置为穿透第二导电半导体 层和有源层，以便与第一导电半导体层接触，被配置为与第二导电半导体层接触的接触层，设置在第二导电半导体层和第一电极之间的第一绝缘层和 在所述有源层和所述第一电极之间，所述第一绝缘层设置成用于封盖所述接触层的侧部和上部;以及第二电极，被配置为穿透所述第一绝缘层，以便与所述接触层接触 接触层。