公开(公告)号：US20180323341A1

公开(公告)日：2018-11-08

申请号：US15772907

申请日：2016-11-03

Applicant: LG INNOTEK CO., LTD.

Inventor： Ji Hyun KOO ,  Dae Hee LEE ,  Jung Wook LEE

IPC: H01L33/14 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44 ,  H01L33/48 ,  H01L33/40

Abstract: A semiconductor device according to an embodiment includes: a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a plurality of recesses exposing a lower portion of the first conductive semiconductor layer; at least one pad arranged outside the light emitting structure and arranged to be adjacent to at least one edge; and a plurality of insulation patterns arranged in the recesses and extending to a lower surface of the light emitting structure, in which widths of the plurality of insulation patterns are reduced as the insulation patterns become further away from the pad. The semiconductor device according to the embodiment may prevent a current from being focused on a recess area adjacent to the pad.

公开(公告)号：US20180240940A1

公开(公告)日：2018-08-23

申请号：US15752926

申请日：2016-08-18

Applicant: LG INNOTEK CO., LTD.

Inventor： Dae Hee LEE ,  Young Hoon KIM ,  Jung Hwan SON ,  Seung Il LEE ,  Jung Wook LEE ,  Jae Young IM

IPC: H01L33/40 ,  H01L33/62 ,  H01L33/38 ,  H01L33/26

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/26 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: Disclosed in an embodiment is a light emitting device comprising: a light-emitting structure having a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer; a first contact layer disposed under the light-emitting structure; a reflective layer disposed under the first contact layer; a first electrode layer including a capping layer disposed under the reflective layer; a second electrode layer electrically connected with the first semiconductor layer; a protective layer disposed at the outer peripheral portion between the capping layer and the light-emitting structure; a barrier layer at an outer side of the reflective layer and made of a metal different from that of the reflective layer; and a support member disposed under the capping layer.a