公开(公告)号：US20150349220A1

公开(公告)日：2015-12-03

申请号：US14725469

申请日：2015-05-29

Applicant: LG INNOTEK CO., LTD.

Inventor： Ji Hyung MOON ,  Sang Youl LEE ,  Bum Doo PARK ,  Chung Song KIM ,  Sang Rock PARK ,  Byung Hak JEONG ,  Tae Yong LEE

IPC: H01L33/60 ,  H01L33/30

CPC classification number: H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46

Abstract: Disclosed is a light emitting device including a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer, a first electrode electrically connected with the first conductive semiconductor layer, a mirror layer under the light emitting structure, a window semiconductor layer between the mirror layer and the light emitting structure, a reflective layer under the mirror layer, a conductive contact layer between the reflective layer and the window semiconductor layer and in contact with the second conductive semiconductor layer, and a conductive support substrate under the reflective layer. The window semiconductor layer includes a C-doped P-based semiconductor doped with a higher dopant concentration. The conductive contact layer includes material different from that of the mirror layer with a thickness thinner than that of the window semiconductor layer.

Abstract translation: 公开了一种发光装置，其包括发光结构，该发光结构包括第一导电半导体层，第一导电半导体层下的有源层和有源层下的第二导电半导体层，与第一导电半导体层电连接的第一电极 在发光结构下方的镜面层，在镜面层和发光结构之间的窗口半导体层，反射层下面的反射层，反射层和窗口半导体层之间的导电接触层， 第二导电半导体层，以及在该反射层下方的导电支撑基板。 窗口半导体层包括掺杂较高掺杂剂浓度的C掺杂的P基半导体。 导电接触层包括与镜面层的材料不同的材料，其厚度比窗口半导体层的厚度薄。

公开(公告)号：US20210143608A1

公开(公告)日：2021-05-13

申请号：US17262839

申请日：2019-07-26

Applicant: LG INNOTEK CO., LTD.

Inventor： Yong Gyeong LEE ,  Se Yeon JUNG ,  Tae Yong LEE

IPC: H01S5/042 ,  H01S5/42 ,  H01S5/183

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to an embodiment may comprise: a substrate; a first reflective layer arranged on the substrate; an active layer arranged on the first reflective layer; an aperture layer arranged on the active layer and comprising an opening; a second reflective layer arranged on the active layer; a transparent electrode layer arranged on the second reflective layer; and a metal electrode layer arranged on the transparent electrode layer. The transparent electrode layer may comprise a first area perpendicularly overlapping the opening and multiple second areas extending from the first area. The multiple second areas may be arranged outside the opening along the circumferential direction of the opening and spaced apart from each other. The multiple second areas may be arranged and spaced apart from each other so as to correspond to the circumference of the opening. The metal electrode layer may electrically contact the second reflective layer between the multiple second areas.

公开(公告)号：US20200066936A1

公开(公告)日：2020-02-27

申请号：US16466953

申请日：2017-12-04

Applicant: LG INNOTEK CO., LTD.

Inventor： Deok Ki HWANG ,  Jae Hun JEONG ,  Ki Bum SUNG ,  Sang Jun PARK ,  Tae Yong LEE ,  Yong Han JEON

IPC: H01L33/36 ,  G01N21/17 ,  G01N21/33 ,  G01N17/00

Abstract: A semiconductor device disclosed in an embodiment comprises: a light emitting unit comprising a light emitting structure layer which has a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a sensor unit disposed on the light emitting unit, wherein the sensor unit comprises: a sensing material changing in resistance with light emitted by the light emitting unit; a first sensor electrode comprising a first pad portion and a first extension part extending from the first pad portion and contacting the sensing material; and a second sensor electrode comprising a first pad portion and a second extension part extending toward the first extension part from the second pad portion and contacting the sensing material. The sensor unit senses an external gas in response to the light generated from the light emitting unit.