公开(公告)号：US20170162753A1

公开(公告)日：2017-06-08

申请号：US15433167

申请日：2017-02-15

Applicant: LG INNOTEK CO. LTD.

Inventor： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Tchang Hun OH ,  Hee Seok CHOI ,  Kwang Ki CHOI

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/14 ,  H01L33/22 ,  H01L33/38

CPC classification number: H01L33/44 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

公开(公告)号：US20150325750A1

公开(公告)日：2015-11-12

申请号：US14797262

申请日：2015-07-13

Applicant: LG INNOTEK CO., LTD.

Inventor： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Tchang Hun OH ,  Hee Seok CHOI ,  Kwang Ki CHOI

IPC: H01L33/40 ,  H01L33/14 ,  H01L33/24 ,  H01L33/44

CPC classification number: H01L33/44 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Abstract translation: 提供了一种半导体发光器件。 半导体发光器件可以包括发光结构，电极，欧姆层，电极层，粘合层和沟道层。 发光结构可以包括化合物半导体层。 电极可以设置在发光结构上。 欧姆层可以设置在发光结构之下。 电极层可以包括在欧姆层之下的反射金属。 粘合层可以设置在电极层的下方。 沟道层可以沿着发光结构的底部边缘设置。