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公开(公告)号：US20180062045A1
公开(公告)日：2018-03-01
申请号：US15804021
申请日：2017-11-06
Applicant: LG INNOTEK CO., LTD.
Inventor： Hwan Hee JEONG , Sang Youl LEE , June O. SONG , Ji Hyung MOON , Kwang Ki CHOI
IPC: H01L33/44 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/06 , H01L33/40 , H01L33/42 , H01L33/22 , H01L33/10 , H01L33/00
CPC classification number: H01L33/44 , F21K9/23 , F21Y2105/10 , F21Y2113/13 , F21Y2115/10 , H01L33/0079 , H01L33/06 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/0002 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from, the second electrode.
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公开(公告)号：US20160365484A1
公开(公告)日：2016-12-15
申请号：US15244724
申请日：2016-08-23
Applicant: LG INNOTEK CO., LTD.
Inventor： Hwan Hee JEONG , Sang Youl LEE , June O SONG , Kwang Ki CHOI
CPC classification number: H01L33/22 , H01L33/005 , H01L33/36 , H01L33/38 , H01L33/405 , H01L33/42 , H01L33/60 , H01L33/62 , H01L2224/45139 , H01L2224/48091 , H01L2924/12032 , H01L2933/0016 , H01L2924/00014 , H01L2924/00 , H01L2924/00011
Abstract: A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type semiconductor layer, a current spreading portion disposed on a second upper portion of the second conductive type semiconductor layer, an adhesive layer disposed under a first conductive type semiconductor layer, an insulating layer disposed between the electrode and the adhesive layer, a passivation layer disposed on a side surface of the light emitting structure and on a at least one upper surface of the light emitting structure, and a reflective layer disposed between the metal layer and the first conductive type semiconductor layer.
Abstract translation: 发光器件包括金属层，发光结构，设置在第二导电类型半导体层的第一上部上的电极，设置在第二导电类型半导体层的第二上部上的电流扩展部分，粘合剂 设置在第一导电类型半导体层下的绝缘层，设置在电极和粘合剂层之间的绝缘层，设置在发光结构的侧表面上以及在发光结构的至少一个上表面上的钝化层，以及 设置在所述金属层和所述第一导电型半导体层之间的反射层。
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公开(公告)号：US20190044030A1
公开(公告)日：2019-02-07
申请号：US15999016
申请日：2018-08-20
Applicant: LG INNOTEK CO., LTD.
Inventor： Hwan Hee JEONG , Sang Youl LEE , June O. SONG , Ji Hyung MOON , Kwang Ki CHOI
IPC: H01L33/44 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/06 , H01L33/40 , H01L33/42 , H01L33/00 , F21Y115/10 , F21Y105/10 , F21Y113/13 , H01L33/10 , H01L33/22 , F21K9/23
CPC classification number: H01L33/44 , F21K9/23 , F21Y2105/10 , F21Y2113/13 , F21Y2115/10 , H01L33/0079 , H01L33/06 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/36 , H01L33/38 , H01L33/387 , H01L33/40 , H01L33/42 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2924/0002 , H01L2924/12032 , H01L2924/00014 , H01L2924/00
Abstract: Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.
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公开(公告)号：US20150014734A1
公开(公告)日：2015-01-15
申请号：US14503906
申请日：2014-10-01
Applicant: LG INNOTEK CO., LTD.
Inventor： Kwang Ki CHOI , Hwan Hee JEONG , Sang Youl LEE , June O SONG
CPC classification number: H01L27/15 , H01L29/78 , H01L33/22 , H01L33/38 , H01L33/385 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2924/13062 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
Abstract: A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure.
Abstract translation: 根据实施例的发光器件包括第一电极; 在第一电极上包括第一半导体层，有源层和第二半导体层的发光结构; 在发光结构上的第二电极; 以及安装在发光结构上以控制发光结构的控制开关。
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公开(公告)号：US20190148612A1
公开(公告)日：2019-05-16
申请号：US16250408
申请日：2019-01-17
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Kwang Ki CHOI
Abstract: Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.
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Patent Agency Ranking
公开(公告)号：US20180254396A1
公开(公告)日：2018-09-06
申请号：US15972736
申请日：2018-05-07
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Kwang Ki CHOI
CPC classification number: H01L33/62 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/483 , H01L33/486 , H01L33/60 , H01L2224/16
Abstract: Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.
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公开(公告)号：US20180151778A1
公开(公告)日：2018-05-31
申请号：US15576563
申请日：2016-05-25
Applicant: LG INNOTEK CO., LTD.
Inventor： Sun Woo PARK , Dong Hyun SUNG , Dae Hee LEE , Byoung Woo LEE , Kwang Ki CHOI , Jae Cheon HAN
CPC classification number: H01L33/387 , H01L33/0016 , H01L33/06 , H01L33/14 , H01L33/30 , H01L33/32 , H01L33/36 , H01L33/382 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: Disclosed according to one embodiment is a light-emitting element comprising: a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a second conductive layer electrically connected to the second semiconductor layer; a first conductive layer comprising a plurality of through electrodes electrically connected to the first semiconductor layer through the second conductive layer and the light-emitting structure; an insulation layer for electrically insulating the plurality of through electrodes from the active layer, the second semiconductor layer, and the second conductive layer; and an electrode pad disposed in an exposed area of the second conductive layer, wherein the plurality of through electrodes differ in the area of a first region electrically connected to the first semiconductor layer.
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公开(公告)号：US20180090539A1
公开(公告)日：2018-03-29
申请号：US15540701
申请日：2015-12-30
Applicant: LG INNOTEK CO., LTD.
Inventor： Su Hyoung SON , Keon Hwa LEE , Byeong Kyun CHOI , Kwang Ki CHOI
IPC: H01L27/15 , H01L23/00 , H01L33/30 , H01L33/62 , H01L33/00 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/44
CPC classification number: H01L27/156 , H01L21/67161 , H01L24/24 , H01L33/005 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/30 , H01L33/38 , H01L33/385 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2933/0016
Abstract: A light emitting element of an embodiment may comprise: a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, and first and second electrodes placed on the first and second conductive semiconductor layers respectively, wherein the light emitting structure includes a first mesa region, the first conductive type semiconductor layer includes a second mesa region, and the first electrode includes: a first region which is a partial region of the upper surface of the second mesa region; a second region which is the side surface of the second mesa region; and a third region arranged to extend from the edge of the side surface of the second mesa region, wherein the first, second, and third regions are formed such that the thickness of the first region (d1), the second region (d2), and the third region (d3) have a ratio of d1:d2:d3=1:0.9˜1.1:1.
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9.发明申请公开(公告)号：US20160111614A1
公开(公告)日：2016-04-21
申请号：US14885427
申请日：2015-10-16
Applicant: LG INNOTEK CO., LTD.
Inventor： Sang Youl LEE , Kwang Ki CHOI
CPC classification number: H01L33/62 , H01L33/20 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/483 , H01L33/486 , H01L33/60 , H01L2224/16
Abstract: Embodiments provide a light emitting device package including a substrate, a light emitting structure disposed under the substrate and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, first and second electrodes connected to the first and second conductive semiconductor layers, a first pad connected to the first electrodes in first-first through-holes penetrating the second conductive semiconductor layer and the active layer, and a first insulation layer disposed between the first pad and the second conductive semiconductor layer and between the first pad and the active layer to cover the first electrodes in a first-second through-hole, and a second pad connected to the second electrode through a second through-hole penetrating the first insulation layer and electrically spaced apart from the first pad. The second pad does not overlap the first insulation layer in the first-second through-hole in a thickness direction of the light emitting structure.
Abstract translation: 实施例提供一种发光器件封装，包括衬底，设置在衬底下方并包括第一导电半导体层，有源层和第二导电半导体层的发光结构，连接到第一和第二导电半导体的第一和第二电极 层，连接到穿过第二导电半导体层和有源层的第一第一通孔中的第一电极的第一焊盘以及设置在第一焊盘和第二导电半导体层之间以及第一焊盘和第二焊盘之间的第一绝缘层， 所述有源层覆盖第一第二通孔中的第一电极，以及通过贯穿所述第一绝缘层并与所述第一焊盘电隔离的第二通孔连接到所述第二电极的第二焊盘。 第二衬垫在发光结构的厚度方向上不与第一通孔中的第一绝缘层重叠。
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公开(公告)号：US20170162753A1
公开(公告)日：2017-06-08
申请号：US15433167
申请日：2017-02-15
Applicant: LG INNOTEK CO. LTD.
Inventor： Hwan Hee JEONG , Sang Youl LEE , June O SONG , Tchang Hun OH , Hee Seok CHOI , Kwang Ki CHOI
CPC classification number: H01L33/44 , H01L33/0075 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48091 , H01L2933/0016 , H01L2924/00014
Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.
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