中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

34 records (took 0.016 seconds)

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20170244007A9

    公开(公告)日：2017-08-24

    申请号：US14323912

    申请日：2014-07-03

    Applicant: LG Innotek Co., Ltd.

    Inventor： Hwan Hee JEONG

    IPC: H01L33/40 ,  H01L33/38

    CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.

    LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE PACKAGE, AND LIGHT UNIT
    3.
    发明申请
    LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE PACKAGE, AND LIGHT UNIT 有权
    发光装置，发光装置包和灯单元

    公开(公告)号：US20150303352A1

    公开(公告)日：2015-10-22

    申请号：US14405794

    申请日：2013-06-04

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Hwan Hee JEONG

    IPC: H01L33/40 ,  H01L33/62

    CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/181 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: A light-emitting device, according to one embodiment, comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer which is underneath the first conductive semiconductor layer, and a second conductive semiconductor layer which is underneath the active layer; a reflective electrode which is arranged under the light-emitting structure; a first metal layer which is arranged under the reflective electrode and is electrically connected to the second conductive semiconductor layer; a second metal layer which is arranged under the reflective electrode and is insulated from the first metal layer; and a contact portion for electrically connecting the second metal layer and the first conductive semiconductor layer.

    Abstract translation: 根据一个实施例的发光器件包括：发光结构，包括第一导电半导体层，位于第一导电半导体层下方的有源层和位于有源层下面的第二导电半导体层; 布置在发光结构下方的反射电极; 第一金属层，其布置在反射电极下方并电连接到第二导电半导体层; 第二金属层，其布置在反射电极下方并与第一金属层绝缘; 以及用于电连接第二金属层和第一导电半导体层的接触部分。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    4.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130200418A1

    公开(公告)日：2013-08-08

    申请号：US13829637

    申请日：2013-03-14

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Hwan Hee JEONG

    IPC: H01L33/36

    CPC classification number: H01L33/62 ,  H01L24/97 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/36 ,  H01L33/38 ,  H01L33/44 ,  H01L2924/13091 ,  H01L2924/00

    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess.

    Abstract translation: 公开了一种半导体发光器件。 半导体发光器件包括包括第一导电半导体层，有源层和第二导电半导体层的发光结构。 电极在发光结构的底表面上，电极层和导电支撑构件设置在发光结构的顶表面上。 凹部从发光结构的顶表面凹陷。 透射层在发光结构和电极层之间。 透射层包括具有设置在凹部中的突起的第一部分。

    LIGHT-EMITTING DEVICE PACKAGE AND LIGHTING MODULE
    5.
    发明申请
    LIGHT-EMITTING DEVICE PACKAGE AND LIGHTING MODULE 审中-公开

    公开(公告)号：US20200303596A1

    公开(公告)日：2020-09-24

    申请号：US16649452

    申请日：2018-09-21

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Chang Man LIM ,  June O SONG ,  Won Jung KIM ,  Hyoung Jin KIM ,  Hwan Hee JEONG

    IPC: H01L33/48 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L23/00

    Abstract: The light-emitting device package disclosed in the embodiment includes first and second frames; a body supporting the first and second frames; and a light emitting device on the second frame, and the body may include a lower surface, a first side, and a second side facing the first side. The first frame includes a first recess that is concave in a second side direction from a first side portion adjacent to the first side, and the second frame includes a second recess that is concave in a first side direction from a second side portion adjacent to the second side. The first side portion of the first frame includes plurality of protrusions exposed to the first side of the body, the first recess is disposed between the protrusions of the first side portion, the second side portion of the second frame includes plurality of protrusions exposed to the second side of the body, and the second recess is disposed between the protrusions of the second side portion. A first length in the second direction of the first and second recesses is longer than a width in the first direction, and the first length may be larger than the second length in the second direction, which is an interval between the protrusions disposed in each of the first and second frames.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20140332836A1

    公开(公告)日：2014-11-13

    申请号：US14323912

    申请日：2014-07-03

    Applicant: LG Innotek Co., Ltd.

    Inventor： Hwan Hee JEONG

    IPC: H01L33/40 ,  H01L33/38

    CPC classification number: H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.

    Abstract translation: 公开了一种半导体发光器件。 半导体发光器件包括多个化合物半导体层，包括第一导电半导体层，有源层和第二导电半导体层; 多个化合物半导体层上的焊盘; 多个化合物半导体层下方的电极层; 以及配置在所述多个化合物半导体层下方并对应于所述垫的支撑构件。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20130056789A1

    公开(公告)日：2013-03-07

    申请号：US13668682

    申请日：2012-11-05

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Hwan Hee JEONG

    IPC: H01L33/44

    CPC classification number: H01L33/44 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/46

    Abstract: A semiconductor light emitting device includes a conductive support member; a light emitting structure under the conductive support member; an insulating layer including a protrusion disposed along an outer circumference of the light emitting structure; an electrode layer having an outer portion on the insulating layer and an inner portion on an inner portion of a top surface of the light emitting structure; and an electrode under the light emitting structure, wherein the inner portion of the electrode layer is protruded to the light emitting structure relative to the outer portion of the electrode layer, and wherein a portion of the insulating layer surrounds a portion of the light emitting structure.

    Abstract translation: 半导体发光器件包括导电支撑构件; 在导电支撑构件下面的发光结构; 绝缘层，包括沿着所述发光结构的外周设置的突起; 在所述绝缘层上具有外部部分的电极层和所述发光结构的顶表面的内部的内部; 以及在发光结构下方的电极，其中电极层的内部相对于电极层的外部部分突出到发光结构，并且其中绝缘层的一部分围绕发光结构的一部分 。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权

    公开(公告)号：US20130056771A1

    公开(公告)日：2013-03-07

    申请号：US13667926

    申请日：2012-11-02

    Applicant: LG Innotek Co., Ltd.

    Inventor： Hwan Hee JEONG

    IPC: H01L33/32 ,  H01L33/60

    CPC classification number: H01L33/387 ,  H01L33/0079 ,  H01L33/42 ,  H01L33/44

    Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer, and a transmissive conductive layer at least one part between the second conductive semiconductor layer and the second electrode layer.

Patent Agency Ranking