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    SEMICONDUCTOR MODULE AND DISPLAY DEVICE INCLUDING SAME
    1.
    发明申请
    SEMICONDUCTOR MODULE AND DISPLAY DEVICE INCLUDING SAME 审中-公开

    公开(公告)号：US20200286949A1

    公开(公告)日：2020-09-10

    申请号：US16648860

    申请日：2018-09-19

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  Chung Song KIM ,  Yong Tae MOON ,  Ji Hyung MOON ,  Sun Woo PARK ,  Hyeon Min CHO

    IPC: H01L27/15 ,  H01L33/50

    Abstract: Disclosed in an embodiment is a display device comprising a panel substrate and a plurality of semiconductor devices disposed on the panel substrate, wherein the panel substrate includes first and second regions disposed in a first direction, the plurality of semiconductor devices include a plurality of first semiconductor devices disposed in the first region and a plurality of second semiconductor devices disposed in the second region, the wavelength deviation between the first semiconductor device disposed at the edge of the first region and the second semiconductor device disposed at the edge of the second region is within 2 nm, and the wavelength pattern of the plurality of first semiconductor devices in the first direction is the same as the wavelength pattern of the plurality of second semiconductor devices in the first direction.

    DISPLAY DEVICE MANUFACTURING METHOD
    2.
    发明申请
    DISPLAY DEVICE MANUFACTURING METHOD 审中-公开

    公开(公告)号：US20190378760A1

    公开(公告)日：2019-12-12

    申请号：US16475874

    申请日：2018-01-05

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK ,  Hyeon Min CHO

    IPC: H01L21/78 ,  H01L27/15 ,  H01L21/52 ,  H01L21/268 ,  H05B33/10

    Abstract: An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.

    SEMICONDUCTOR DEVICE
    3.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190131494A1

    公开(公告)日：2019-05-02

    申请号：US16090051

    申请日：2017-03-28

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE ,  Chung Song KIM ,  Ji Hyung MOON ,  Sun Woo PARK ,  June O SONG

    IPC: H01L33/38 ,  G09G3/22 ,  G09G3/3266 ,  G09G3/3258 ,  H01L27/12 ,  H01L29/417 ,  H01L29/423

    Abstract: A semiconductor device, according to one embodiment, may comprise: a light-emitting structure comprising a first conductivity type semiconductor layer, an active layer disposed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the active layer; a transistor disposed on the light-emitting structure and comprising a semiconductor layer, a source electrode, a gate electrode, and a drain electrode; a second electrode disposed on the second conductivity type semiconductor layer and electrically connected to the drain electrode and the second conductivity type semiconductor layer; a first bonding pad disposed on the light-emitting structure and electrically connected to the first conductivity type semiconductor layer; a second bonding pad disposed on the transistor and electrically connected to the source electrode; and a third bonding pad disposed on the transistor and electrically connected to the gate electrode.

    LIGHT EMITTING DEVICE PACKAGE AND LIGHT EMITTING DEVICE COMPRISING SAME (As Amended)
    4.
    发明申请
    LIGHT EMITTING DEVICE PACKAGE AND LIGHT EMITTING DEVICE COMPRISING SAME (As Amended) 审中-公开

    公开(公告)号：US20170256675A1

    公开(公告)日：2017-09-07

    申请号：US15506801

    申请日：2015-07-28

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Jin Kyung CHOI ,  Jun Hee HONG ,  Sang Youl LEE

    IPC: H01L33/12 ,  H01L33/62 ,  H01L33/52 ,  H01L33/50 ,  H01L33/20 ,  H01L33/40

    CPC classification number: H01L33/12 ,  H01L33/20 ,  H01L33/405 ,  H01L33/502 ,  H01L33/52 ,  H01L33/62 ,  H01L2224/16245 ,  H01L2933/0066

    Abstract: A light emitting device package according to an embodiment comprises: a light emitting device comprising a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; first and second lead frames disposed to be spaced apart from each other; first and second solder portions disposed on the first and second lead frames, respectively; and first and second pads disposed between the first and second solder portions and the first and second conductive semiconductor layers, respectively, wherein at least one of the first or second pad comprises at least one of a rounding portion and a chamfer portion, wherein the first pad comprises a first-first edge and a first-second edge being positioned farther than the first-first edge from the center of the light emitting device, wherein the second pad comprises a second-first edge and a second-second edge being positioned farther than the second-first edge from the center of the light emitting device, and wherein the rounding portion or the chamfer portion is positioned at at least one of the first-second edge or the second-second edge.

    LIGHT EMITTING DEVICE
    8.
    发明申请
    LIGHT EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140159095A1

    公开(公告)日：2014-06-12

    申请号：US14179420

    申请日：2014-02-12

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Hwan Hee JEONG ,  Sang Youl LEE ,  June O SONG ,  Kwang Ki CHOI

    IPC: H01L33/36 ,  H01L33/60

    CPC classification number: H01L33/22 ,  H01L33/005 ,  H01L33/36 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2924/12032 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00011

    Abstract: A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type semiconductor layer, a current spreading portion disposed on a second upper portion of the second conductive type semiconductor layer, an adhesive layer disposed under a first conductive type semiconductor layer, an insulating layer disposed between the electrode and the adhesive layer, a passivation layer disposed on a side surface of the light emitting structure and on a at least one upper surface of the light emitting structure, and a reflective layer disposed between the metal layer and the first conductive type semiconductor layer.

    Abstract translation: 发光器件包括金属层，发光结构，设置在第二导电类型半导体层的第一上部上的电极，设置在第二导电类型半导体层的第二上部上的电流扩展部分，粘合剂 设置在第一导电类型半导体层下的绝缘层，设置在电极和粘合剂层之间的绝缘层，设置在发光结构的侧表面上以及在发光结构的至少一个上表面上的钝化层，以及 设置在所述金属层和所述第一导电型半导体层之间的反射层。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THEREOF
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THEREOF 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20130146935A1

    公开(公告)日：2013-06-13

    申请号：US13758424

    申请日：2013-02-04

    Applicant: LG INNOTEK CO., LTD.

    Inventor： Sang Youl LEE

    IPC: H01L33/36

    CPC classification number: H01L33/36 ,  H01L33/0079 ,  H01L33/382

    Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure disposed under an insulating layer having a plurality of holes. A first electrode is disposed on the insulating layer and a second electrode disposed is disposed under the light emitting structure. A conductive supporting member is disposed under the second electrode. The plurality of contact protrusions are disposed in the holes of the insulating layer and include filler connected to the first conductive semiconductor layer and disposed in the plurality of holes. The conductive supporting member physically contacts with the second electrode and has a thickness thicker than that of the insulating layer. The first electrode is located at a higher position than an entire region of the insulating layer and the insulating layer is located at a higher position than an entire region of the light emitting structure.

    Abstract translation: 提供了一种半导体发光器件。 半导体发光器件包括设置在具有多个孔的绝缘层下方的发光结构。 第一电极设置在绝缘层上，第二电极设置在发光结构的下面。 导电支撑构件设置在第二电极下方。 多个接触突起设置在绝缘层的孔中，并且包括连接到第一导电半导体层并且设置在多个孔中的填充物。 导电支撑构件与第二电极物理接触并且具有比绝缘层的厚度更厚的厚度。 第一电极位于比绝缘层的整个区域更高的位置，并且绝缘层位于比发光结构的整个区域更高的位置。

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