Abstract:
The present invention discloses an array substrate for an active-matrix LCD device and a method of fabricating the same. The array substrate reduces the number of masks used in the fabrication process so that reliability is enhanced and the cost is reduced over the conventional device and method.
Abstract:
A liquid crystal display device and a method of fabricating the same are disclosed in the present invention. More specifically, the method includes the steps forming a gate line on the first substrate sequentially forming a first insulating layer, an amorphous silicon layer, and a metal layer on the first substrate, patterning the metal layer to form a data line, forming a second insulating layer on the data line, patterning the second insulating layer and the amorphous silicon layer to form a passivation layer and an active layer, respectively, forming a pixel electrode at a pixel region defined by the gate and data lines, assembling the first substrate and the second substrate having a black matrix thereon, wherein the black matrix vertically overlaps at least one boundary line defined by different exposures during step-and-repeat exposure processes; and forming a liquid crystal layer between the first and second substrates.
Abstract:
An electrostatic damage preventing apparatus for a thin film transistor array of a liquid crystal display includes a horizontal ground voltage line disposed at a first perimeter portion of the thin film transistor array, a vertical ground voltage line disposed at a second perimeter portion of the thin film transistor array, and a first electrostatic damage-preventing switching device group including parallel connection of at least two electrostatic damage-preventing switching devices to divide and divert an electrostatic voltage applied over the horizontal ground voltage line.
Abstract:
A TFT array substrate has a PAI pattern, and the PAI pattern has an over-etched portion of the pure amorphous silicon layer. This over-etched portion prevents a short between the pixel electrode and the pure amorphous silicon layer (i.e., the active layer). The over-etched portion also enables the aperture ratio to increase a gate line over a said substrate; a data line over the said substrate being perpendicular to the gate line; a passivation layer covering the data line, the passivation layer divided into a residual passivation layer and a etched passivation layer; a doped amorphous silicon layer formed under the data line and corresponding in size to the data line; a pure amorphous silicon layer formed under the doped amorphous silicon layer and having a over-etched portion in the peripheral portions, wherein the over-etched portion is over-etched from the edges of the residual passivation layer toward the inner side; an insulator layer under the pure amorphous silicon layer; a TFT formed near the crossing of the gate line and the data line; and a pixel electrode overlapping the data line and contacting the TFT.
Abstract:
A liquid crystal display, and a method of manufacturing thereof, includes providing a substrate; depositing sequentially a first metal layer and a first insulating layer on the substrate; patterning the first metal layer and the first insulating layer using a first mask to form a gate line and a first gate insulating layer; depositing sequentially a second gate insulating layer, a pure semiconductor layer, a doped semiconductor layer and a second metal layer over the whole substrate; patterning the second metal layer using a second mask to form a data line, source and drain electrodes, a capacitor electrode, the capacitor electrode overlapping a portion of the gae line; etching the doped semiconductor layer between the source and drain electrodes to form a channel region; depositing a third insulating layer over the whole substrate; patterning the third insulating layer using a third mask to form a passivation film, the passivation film having a smaller width than the data line and covering the source and drain electrodes and exposing a portion of the drain electrode and the capacitor electrode; depositing a transparent conductive material layer over the whole substrate; and patterning the transparent conductive material layer using a fourth mask to pixel electrode, the pixel electrode contacting the drain electrode.
Abstract:
An array substrate for use in a liquid crystal display device is fabricated by the steps of forming a first metal layer on a substrate, patterning the first metal layer to form a gate line, a gate electrode, a gate pad, a first shorting bar, and a second shorting bar, forming a gate insulation layer, a pure amorphous silicon layer, a doped amorphous silicon layer and a second metal layer to cover the patterned first metal layer, patterning the second metal layer and the doped amorphous silicon layer to form first, second and third through-holes and first and second grooves to expose a portion of the pure amorphous silicon layer, the first and second grooves creating an isolated portions of the second metal layer, forming a passivation layer to cover the patterned second metal layer, forming a source electrode, a drain electrode, a data line, a data pad, an insulating segment, and first, second and third contact holes, and forming a pixel electrode, a first connector and a second connector of a transparent conductive material.