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公开(公告)号：US08846535B2
公开(公告)日：2014-09-30
申请号：US13315143
申请日：2011-12-08
IPC: H01L21/302 , H01L21/461 , H01L21/02 , H01L29/49 , H01L21/321 , H01L21/28
CPC classification number: H01L29/495 , H01L21/02074 , H01L21/02244 , H01L21/28079 , H01L21/3212
Abstract: The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminum to form aluminum gates through a chemical mechanical planarization (CMP) process, the exposed surfaces of the aluminum gates are oxidized with H2O2 solution to form a film of alumina, and the semiconductor device is cleaned.
Abstract translation: 本发明公开了半导体器件的制造方法。 在通过化学机械平坦化（CMP）工艺除去过量的铝以形成铝门之后，用H 2 O 2溶液氧化铝门的暴露表面以形成氧化铝膜，并清洁半导体器件。
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公开(公告)号：US20130105919A1
公开(公告)日：2013-05-02
申请号：US13486994
申请日：2012-06-01
CPC classification number: H01L29/4966 , H01L21/28088 , H01L29/401 , H01L29/495 , H01L29/517 , H01L29/518 , H01L29/66545
Abstract: A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device uses an aluminum alloy, rather than aluminum, for a metal gate. Therefore, the surface of the high-k metal gate after the CMP is aluminum alloy rather than pure aluminum, which can greatly reduce defects, such as corrosion, pits and damage, in the metal gate and improve reliability of the semiconductor device.
Abstract translation: 提供半导体器件和制造半导体器件的方法。 半导体器件使用铝合金而不是铝合金作为金属栅极。 因此，CMP后的高k金属栅极的表面是铝合金而不是纯铝，这可以大大减少金属栅极中的腐蚀，凹坑和损伤等缺陷，提高半导体器件的可靠性。
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公开(公告)号：US20120164923A1
公开(公告)日：2012-06-28
申请号：US13178968
申请日：2011-07-08
IPC: B24B1/00
CPC classification number: B24B53/017
Abstract: A polishing method is disclosed, which includes: conditioning a polishing pad, after polishing metal material of a previous wafer; spraying organic acid solution to the polishing pad; spraying deionized water to the polishing pad; performing a water-removing treatment on the polishing pad; and spraying polishing liquid to the polishing pad and polishing metal material of a next wafer. The method can prevent scratches on the surface of metal material of wafers and improve yield rate.
Abstract translation: 公开了一种抛光方法，其包括：在抛光前一晶片的金属材料之后调节抛光垫; 将有机酸溶液喷洒到抛光垫上; 将去离子水喷在抛光垫上; 对抛光垫进行除水处理; 并将抛光液喷射到抛光垫上并抛光下一个晶片的金属材料。 该方法可以防止晶片金属材料表面划伤，提高成品率。
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公开(公告)号：US08721401B2
公开(公告)日：2014-05-13
申请号：US13163667
申请日：2011-06-17
IPC: B24B53/017 , B24B53/00
CPC classification number: B24B53/017
Abstract: A method for cleaning a polishing pad includes dispensing a first amount of deionized water on the polishing pad; cleaning the polishing pad with an acidity/alkalinity solution after dispensing the first amount of deionized water on the polishing pad; rinsing the polishing pad with a second amount of deionized water after cleaning the polishing pad with the acidity/alkalinity solution; removing the acidity/alkalinity solution from the polishing pad. In a subsequent CMP process, the method includes polishing a GST material device for obtaining an improved performance of the GST material device.
Abstract translation: 一种用于清洁抛光垫的方法包括：在抛光垫上分配第一量的去离子水; 在抛光垫上分配第一量的去离子水后，用酸度/碱度溶液清洗抛光垫; 用酸度/碱度溶液清洗抛光垫后用第二量的去离子水冲洗抛光垫; 从抛光垫去除酸度/碱度溶液。 在随后的CMP工艺中，该方法包括抛光GST材料装置以获得GST材料装置的改进的性能。
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公开(公告)号：US20120315762A1
公开(公告)日：2012-12-13
申请号：US13315143
申请日：2011-12-08
IPC: H01L21/306
CPC classification number: H01L29/495 , H01L21/02074 , H01L21/02244 , H01L21/28079 , H01L21/3212
Abstract: The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminium to form aluminium gates through a chemical mechanical planarization (CMP) process, the exposed surfaces of the aluminium gates are oxidized with H2O2 solution to form a film of alumina, and the semiconductor device is cleaned.
Abstract translation: 本发明公开了半导体器件的制造方法。 在通过化学机械平坦化（CMP）工艺除去过量的铝以形成铝门之后，铝浇口的暴露表面用H 2 O 2溶液氧化以形成氧化铝膜，并且清洁半导体器件。
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Patent Agency Ranking
公开(公告)号：US20120164922A1
公开(公告)日：2012-06-28
申请号：US13163667
申请日：2011-06-17
IPC: B24B53/00
CPC classification number: B24B53/017
Abstract: A method for cleaning a polishing pad includes dispensing a first amount of deionized water on the polishing pad; cleaning the polishing pad with an acidity/alkalinity solution after dispensing the first amount of deionized water on the polishing pad; rinsing the polishing pad with a second amount of deionized water after cleaning the polishing pad with the acidity/alkalinity solution; removing the acidity/alkalinity solution from the polishing pad. In a subsequent CMP process, the method includes polishing a GST material device for obtaining an improved performance of the GST material device.
Abstract translation: 一种用于清洁抛光垫的方法包括：在抛光垫上分配第一量的去离子水; 在抛光垫上分配第一量的去离子水后，用酸度/碱度溶液清洗抛光垫; 用酸度/碱度溶液清洗抛光垫后用第二量的去离子水冲洗抛光垫; 从抛光垫去除酸度/碱度溶液。 在随后的CMP工艺中，该方法包括抛光GST材料装置以获得GST材料装置的改进的性能。
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公开(公告)号：US20120142150A1
公开(公告)日：2012-06-07
申请号：US13176678
申请日：2011-07-05
IPC: H01L21/336 , H01L21/28
CPC classification number: H01L29/66545 , H01L21/31053 , H01L29/6653 , H01L29/7833
Abstract: The invention provides a method for forming a metal gate and a method for forming a MOS transistor. The method for forming a metal gate includes: providing a substrate; forming a sacrificial oxide layer and a polysilicon gate on the substrate; forming a silicon oxide layer on sidewalls of the sacrificial oxide layer and the polysilicon gate; forming a stop layer that covers the substrate; removing a part of the stop layer in the spacers; forming a second interlayer dielectric layer that covers the first interlayer dielectric layer, the spacers and the polysilicon gate; polishing the second interlayer dielectric layer to expose the spacers and the polysilicon gate; removing the polysilicon gate to form a trench; removing the sacrificial oxide layer in the trench; and forming a metal gate in the trench. The invention prevents from recesses and therefore metal bridge and metal residuals in the recesses.
Abstract translation: 本发明提供一种用于形成金属栅极的方法和用于形成MOS晶体管的方法。 形成金属栅极的方法包括：提供基板; 在所述基板上形成牺牲氧化物层和多晶硅栅极; 在所述牺牲氧化物层和所述多晶硅栅极的侧壁上形成氧化硅层; 形成覆盖所述基板的停止层; 去除隔离物中的一部分停止层; 形成覆盖所述第一层间电介质层，所述间隔物和所述多晶硅栅极的第二层间电介质层; 抛光所述第二层间电介质层以暴露所述间隔物和所述多晶硅栅极; 去除多晶硅栅极以形成沟槽; 去除沟槽中的牺牲氧化物层; 并在沟槽中形成金属栅极。 本发明防止了凹槽中的金属桥和凹陷中的金属残留物。
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公开(公告)号：US08748279B2
公开(公告)日：2014-06-10
申请号：US13323489
申请日：2011-12-12
IPC: H01L21/336 , H01L21/00
CPC classification number: H01L21/28123
Abstract: The present invention discloses a method of manufacturing semiconductor devices. The method includes a step of performing a chemical mechanical planarization processing on a poly-silicon layer before fabricating a poly-silicon gate such that the poly-silicon gates obtained in subsequent fabrication process are kept at the same height, which thus avoids the silicon nitride residues issue that occurs in the prior art. Therefore, the present invention is capable of enhancing product yield of semiconductor devices and improving device performances.
Abstract translation: 本发明公开了半导体器件的制造方法。 该方法包括在制造多晶硅栅极之前对多晶硅层进行化学机械平面化处理的步骤，使得在随后的制造工艺中获得的多晶硅栅极保持在相同的高度，从而避免了氮化硅 在现有技术中发生的残留问题。 因此，本发明能够提高半导体器件的产量，提高器件性能。
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公开(公告)号：US20120164824A1
公开(公告)日：2012-06-28
申请号：US13178455
申请日：2011-07-07
IPC: H01L21/28
CPC classification number: H01L29/66545 , H01L29/78
Abstract: A method is provided for fabricating a high-K metal gate MOS device. The method includes providing a semiconductor substrate having a surface region, a gate oxide layer on the surface region, a sacrificial gate electrode on the gate oxide layer, and a covering layer on the sacrificial gate electrode, an inter-layer dielectric layer on the semiconductor substrate and the sacrificial gate electrode. The method also includes planarizing the inter-layer dielectric layer to expose a portion of the covering layer atop the sacrificial gate electrode, implanting nitrogen ions into the inter-layer dielectric layer until a depth of implantation is deeper than a thickness of the portion of the covering layer atop the sacrificial gate electrode and polishing the inter-layer dielectric layer to expose a surface of the sacrificial gate electrode, removing the sacrificial gate electrode, and depositing a metal gate.
Abstract translation: 提供了制造高K金属栅极MOS器件的方法。 该方法包括提供具有表面区域，表面区域上的栅极氧化物层，栅极氧化物层上的牺牲栅极电极和牺牲栅电极上的覆盖层的半导体衬底，半导体上的层间电介质层 基板和牺牲栅电极。 该方法还包括平坦化层间电介质层以暴露牺牲栅电极顶部的覆盖层的一部分，将氮离子注入到层间电介质层中，直到植入深度比该部分的厚度更深 覆盖层，并抛光该层间电介质层以暴露牺牲栅电极的表面，去除牺牲栅极电极和沉积金属栅极。
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公开(公告)号：US08851959B2
公开(公告)日：2014-10-07
申请号：US13184907
申请日：2011-07-18
Abstract: A polishing apparatus used in chemical mechanical polishing device is provided. The polishing apparatus includes a polishing plate for holding a wafer to be polished; a polishing pad arm, one end of the polishing pad arm being fixed, another end of the polishing pad arm holding a polishing pad, and the polishing pad arm driving the polishing pad for moving relatively to the wafer; the polishing pad moving relatively to the wafer with drive from the polishing pad arm, and the polishing pad arm ensuring the polishing pad contacting the wafer during movement; and a slurry supply route for supplying polishing slurry between the polishing pad and the wafer during polishing. The present invention also provides a chemical mechanical polishing device. It makes for realizing miniaturization of a chemical mechanical polishing device, saving polishing slurry and improving utilization rate of the polishing pad in the chemical mechanical polishing device to apply the present invention.
Abstract translation: 提供了一种用于化学机械抛光装置的抛光装置。 抛光装置包括：用于保持要抛光的晶片的抛光板; 抛光垫臂，抛光垫臂的一端固定，抛光垫臂的另一端保持抛光垫，抛光垫臂驱动抛光垫以相对于晶片移动; 所述抛光垫相对于来自所述抛光垫臂的驱动的所述晶片移动;以及所述抛光垫臂，其确保所述抛光垫在运动期间与所述晶片接触; 以及用于在抛光期间在抛光垫和晶片之间提供抛光浆料的浆料供应路线。 本发明还提供一种化学机械抛光装置。 实现化学机械研磨装置的小型化，节省抛光浆料，提高化学机械研磨装置的抛光垫的利用率，从而应用本发明。
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