METHODS AND APPARATUS FOR TESTING ISFET ARRAYS

    公开(公告)号:US20220082607A1

    公开(公告)日:2022-03-17

    申请号:US17535367

    申请日:2021-11-24

    Abstract: The invention provides testing of a chemically-sensitive transistor device, such as an ISFET device, without exposing the device to liquids. In one embodiment, the invention performs a first test to calculate a resistance of the transistor. Based on the resistance, the invention performs a second test to transition the testing transistor among a plurality of modes. Based on corresponding measurements, a floating gate voltage is then calculated with little or no circuitry overhead. In another embodiment, the parasitic capacitance of at least either the source or drain is used to bias the floating gate of an ISFET. A driving voltage and biasing current are applied to exploit the parasitic capacitance to test the functionality of the transistor.

    Windowed sequencing
    2.
    发明授权

    公开(公告)号:US11028438B2

    公开(公告)日:2021-06-08

    申请号:US16866653

    申请日:2020-05-05

    Abstract: In one implementation, a method is described. The method includes determining an operational characteristic of sensors of a sensor array. The method further includes selecting a group of sensors in the array based on the operational characteristic of sensors in the group. The method further includes enabling readout of the sensors in the selected group. The method further includes receiving output signals from the enabled sensors.

    Windowed sequencing
    4.
    发明授权

    公开(公告)号:US10655175B2

    公开(公告)日:2020-05-19

    申请号:US16153898

    申请日:2018-10-08

    Abstract: In one implementation, a method is described. The method includes determining an operational characteristic of sensors of a sensor array. The method further includes selecting a group of sensors in the array based on the operational characteristic of sensors in the group. The method further includes enabling readout of the sensors in the selected group. The method further includes receiving output signals from the enabled sensors, the output signals indicating chemical reactions occurring proximate to the sensors of the sensor array.

    Methods and apparatus for testing ISFET arrays

    公开(公告)号:US11231451B2

    公开(公告)日:2022-01-25

    申请号:US15979439

    申请日:2018-05-14

    Abstract: The invention provides testing of a chemically-sensitive transistor device, such as an ISFET device, without exposing the device to liquids. In one embodiment, the invention performs a first test to calculate a resistance of the transistor. Based on the resistance, the invention performs a second test to transition the testing transistor among a plurality of modes. Based on corresponding measurements, a floating gate voltage is then calculated with little or no circuitry overhead. In another embodiment, the parasitic capacitance of at least either the source or drain is used to bias the floating gate of an ISFET. A driving voltage and biasing current are applied to exploit the parasitic capacitance to test the functionality of the transistor.

    CHEMICAL DETECTION DEVICE HAVING MULTIPLE FLOW CHANNELS

    公开(公告)号:US20170097317A1

    公开(公告)日:2017-04-06

    申请号:US15292795

    申请日:2016-10-13

    Abstract: The described embodiments may provide a chemical detection circuit that may comprise a plurality of first output circuits at a first side and a plurality of second output circuits at a second side of the chemical detection circuit. The chemical detection circuit may further comprise a plurality of tiles of pixels each placed between respective pairs of first and second output circuits. Each tile may include four quadrants of pixels. Each quadrant may have columns with designated first columns interleaved with second columns. Each first column may be coupled to a respective first output circuit in first and second quadrants, and to a respective second output circuit in third and fourth quadrants. Each second column may be coupled to a respective second output circuit in first and second quadrants, and to a respective first output circuit in third and fourth quadrants.

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