公开(公告)号：US20140264465A1

公开(公告)日：2014-09-18

申请号：US13801112

申请日：2013-03-13

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith Fife ,  James Bustillo ,  Jordan Owens

IPC: G01N27/414 ,  H01L29/788 ,  H01L29/66

CPC classification number: H01L29/788 ,  G01N27/4145

Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive element is on a sidewall of the opening and spaced away from an upper surface of the dielectric material, the conductive element communicating with the floating gate conductor.

Abstract translation: 在一个实施方式中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 导电元件位于开口的侧壁上并与电介质材料的上表面间隔开，导电元件与浮动栅极导体连通。

公开(公告)号：US08841217B1

公开(公告)日：2014-09-23

申请号：US13801243

申请日：2013-03-13

Applicant: Life Technologies Corporation

Inventor： Keith Fife ,  James Bustillo ,  Jordan Owens

IPC: H01L21/311 ,  G01N27/414

CPC classification number: G01N27/414

Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive element on a sidewall of the opening and extending over an upper surface of the dielectric material.

Abstract translation: 在一个实施方式中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 在开口的侧壁上并在电介质材料的上表面上延伸的导电元件。

公开(公告)号：US11231451B2

公开(公告)日：2022-01-25

申请号：US15979439

申请日：2018-05-14

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Jarie Bolander ,  Keith Fife ,  Mark Milgrew

IPC: G01R31/26 ,  G01R31/28 ,  G01N27/414

Abstract: The invention provides testing of a chemically-sensitive transistor device, such as an ISFET device, without exposing the device to liquids. In one embodiment, the invention performs a first test to calculate a resistance of the transistor. Based on the resistance, the invention performs a second test to transition the testing transistor among a plurality of modes. Based on corresponding measurements, a floating gate voltage is then calculated with little or no circuitry overhead. In another embodiment, the parasitic capacitance of at least either the source or drain is used to bias the floating gate of an ISFET. A driving voltage and biasing current are applied to exploit the parasitic capacitance to test the functionality of the transistor.

公开(公告)号：US20220082607A1

公开(公告)日：2022-03-17

申请号：US17535367

申请日：2021-11-24

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Jarie Bolander ,  Keith Fife ,  Mark Milgrew

IPC: G01R31/26 ,  G01R31/28 ,  G01N27/414

Abstract: The invention provides testing of a chemically-sensitive transistor device, such as an ISFET device, without exposing the device to liquids. In one embodiment, the invention performs a first test to calculate a resistance of the transistor. Based on the resistance, the invention performs a second test to transition the testing transistor among a plurality of modes. Based on corresponding measurements, a floating gate voltage is then calculated with little or no circuitry overhead. In another embodiment, the parasitic capacitance of at least either the source or drain is used to bias the floating gate of an ISFET. A driving voltage and biasing current are applied to exploit the parasitic capacitance to test the functionality of the transistor.

公开(公告)号：US10481123B2

公开(公告)日：2019-11-19

申请号：US15789850

申请日：2017-10-20

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith Fife

IPC: G01N27/414 ,  G01N27/30

Abstract: An ion-sensitive circuit can include a charge accumulation device, to accumulate a plurality of charge packets as a function of an ion concentration of a fluid, and at least one control and readout transistor, to generate an output signal as a function of the accumulated plurality of charge packets, the output signal representing the ion concentration of the solution. The charge accumulation device can include a first charge control electrode above a first electrode semiconductor region, an electrically floating gate structure above a gate semiconductor region and below an ion-sensitive passivation surface, a second charge control electrode above a second electrode semiconductor region, and a drain diffusion region. The first control electrode can control entry of charge into a gate semiconductor region in response to a first control signal. The ion-sensitive passivation surface can be configured to receive the fluid. The second charge control electrode can control transmission of the plurality of charge packets out of the gate semiconductor region and into the drain diffusion region in response to a second control signal. The drain diffusion region can receive the plurality of charge packets from the gate semiconductor region via the second electrode semiconductor region.

公开(公告)号：US08963216B2

公开(公告)日：2015-02-24

申请号：US13801002

申请日：2013-03-13

Applicant: Life Technologies Corporation

Inventor： Keith Fife ,  James Bustillo ,  Jordan Owens

IPC: G01N27/414

CPC classification number: G01N27/414 ,  G01N27/4145

Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.

Abstract translation: 在一个实施方式中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 导电侧壁间隔物位于开口的侧壁上并与浮栅导体的上表面接触。