Multichannel parallel light emitting device

    公开(公告)号:US12003074B2

    公开(公告)日:2024-06-04

    申请号:US17124282

    申请日:2020-12-16

    Abstract: The present invention provides a multichannel parallel light emitting device comprising a semiconductor cooler, a cold surface of the semiconductor cooler completely covers the area of a hot surface, and when the hot surface and the cold surface are horizontally disposed, a horizontal distance is reserved between the edge of the cold surface and the edge of the hot surface, and a positive electrode and a negative electrode are fixed on a second surface of the cold surface. The semiconductor cooler with the above structure is disposed in a sealed BOX of a BOX package, the bottom surface of the inner wall of the BOX package is provided with a groove for mounting a semiconductor cooler, a hot surface of the semiconductor cooler is fixed at the bottom of the groove, an insulating low thermal conductivity sealing ring is disposed between a lower end of a cold surface of the semiconductor cooler and the BOX package, so that the BOX package, the insulating low thermal conductivity sealing ring and the cold surface of the semiconductor cooler form a closed space, so as to achieve the TEC local hermetic effect, a water-proof film is not required for the TEC, and to ensure the TEC can work in a non-hermetic environment.

    Silicon photonics multi-channel parallel optical component and coupling method thereof

    公开(公告)号:US11740417B2

    公开(公告)日:2023-08-29

    申请号:US17927755

    申请日:2021-06-17

    CPC classification number: G02B6/4246 G02B6/42 G02B6/4207 G02B6/428 G02B6/4269

    Abstract: A silicon photonics integrated chip includes the transmit-input waveguide unit, the splitter unit, the modulator unit, the transmit-output waveguide unit, the receive-input waveguide unit and the receiving detector unit integrated inside the chip. A silicon photonics multi-channel parallel optical component and a coupling method of the silicon photonics multi-channel parallel optical component are also provided. The integrated silicon photonics chip is adopted, the transmitting part still uses two-way DC laser group, the receiving chip is integrated inside the silicon photonics chip, and the optical interface adopts the mature FA-MPO in the industry. It has the advantages of mature technology, high degree of integration, relatively low cost, fewer coupling processes, etc., it is one of the advantageous choices for rates above 400 G.

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