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    Thermoelectric conversion body, thermoelectric conversion module, and method for manufacturing thermoelectric conversion body
    4.
    发明授权
    Thermoelectric conversion body, thermoelectric conversion module, and method for manufacturing thermoelectric conversion body 有权

    公开(公告)号：US11974504B2

    公开(公告)日：2024-04-30

    申请号：US17786269

    申请日：2020-12-01

    Applicant: LINTEC Corporation

    Inventor： Yuta Seki ,  Kunihisa Kato ,  Tsuyoshi Muto

    IPC: H10N10/857 ,  H10N10/01 ,  H10N10/17

    CPC classification number: H10N10/857 ,  H10N10/01 ,  H10N10/17

    Abstract: Provided are: a thermoelectric conversion body that has high electrical conductivity, achieving high thermoelectric conversion efficiency when used in a thermoelectric conversion module, and is less susceptible to warpage during manufacture; a method for manufacturing the same; and a thermoelectric conversion module using the same. A thermoelectric conversion body that is a fired product of a composition containing a thermoelectric semiconductor material and a heat resistant resin, wherein, with the heat resistant resin being subjected to temperature elevation and a weight of the heat resistant resin at 400° C. being defined as 100%, a temperature at which the heat resistant resin undergoes a further 5% reduction in weight is 480° C. or lower; a thermoelectric conversion module including the thermoelectric conversion body; and a method for manufacturing the thermoelectric conversion body.

    Manufacturing method of thermoelectric conversion element
    5.
    发明授权
    Manufacturing method of thermoelectric conversion element 有权

    公开(公告)号：US11581470B2

    公开(公告)日：2023-02-14

    申请号：US17271057

    申请日：2019-08-27

    Applicant: LINTEC CORPORATION

    Inventor： Wataru Morita ,  Kunihisa Kato ,  Tsuyoshi Muto ,  Yuma Katsuta

    IPC: H01L35/34 ,  H01L35/16

    Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.

    Electrode material for thermoelectric conversion modules and thermoelectric conversion module using same
    6.
    发明授权
    Electrode material for thermoelectric conversion modules and thermoelectric conversion module using same 有权

    公开(公告)号：US11424397B2

    公开(公告)日：2022-08-23

    申请号：US16493345

    申请日：2018-03-13

    Applicant: LINTEC CORPORATION

    Inventor： Kunihisa Kato ,  Wataru Morita ,  Tsuyoshi Muto ,  Yuma Katsuta

    IPC: H01L35/08 ,  H01L35/16 ,  H01L35/18

    Abstract: Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material. The electrode material for thermoelectric conversion modules includes a first substrate and a second substrate facing each other, a thermoelectric element formed between the first substrate and the second substrate, and an electrode formed on at least one substrate of the first substrate and the second substrate, wherein the substrate is a plastic film, the thermoelectric element contains a bismuth-tellurium-based thermoelectric semiconductor material, a telluride-based thermoelectric semiconductor material, an antimony-tellurium-based thermoelectric semiconductor material, or a bismuth-selenide-based thermoelectric semiconductor material, the electrode that is in contact with the thermoelectric element is formed of a metal material, and the metal material is gold, nickel, aluminum, rhodium, platinum, chromium, palladium, stainless steel, molybdenum or an alloy containing any of these metals.

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