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Patent Agency Ranking
公开(公告)号：US11581469B2
公开(公告)日：2023-02-14
申请号：US17271021
申请日：2019-08-27
Applicant: LINTEC CORPORATION
Inventor： Kunihisa Kato , Tsuyoshi Muto , Masaya Todaka , Yuma Katsuta
Abstract: A method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including a step of forming a sacrificial layer on a substrate, (B) a step of forming a thermoelectric conversion material layer of a thermoelectric semiconductor composition on the sacrificial layer, (C) a step of annealing the thermoelectric conversion material layer, (D) a step of transferring the annealed thermoelectric conversion material layer to a pressure-sensitive adhesive layer, (E) a step of individualizing the thermoelectric conversion material layer into individual chips of a thermoelectric conversion material, and (F) a step of peeling the individualized chips of a thermoelectric conversion material; and a method for producing a thermoelectric conversion module using the chip produced according to the production method.
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公开(公告)号：US11895919B2
公开(公告)日：2024-02-06
申请号：US17271091
申请日：2019-08-27
Applicant: LINTEC CORPORATION
Inventor： Masaya Todaka , Kunihisa Kato , Tsuyoshi Muto , Yuma Katsuta
IPC: H10N10/00 , H10N10/817 , H10N10/852 , H10N10/01
CPC classification number: H10N10/01 , H10N10/817 , H10N10/852
Abstract: Provided are: a method for producing a chip of a thermoelectric conversion material that enables annealing treatment of a thermoelectric conversion material in the form not having a junction with an electrode, and enables annealing of a thermoelectric semiconductor material at an optimum annealing temperature; and a method for producing a thermoelectric conversion module using the chip (13). Also provided are: a method for producing a chip of a thermoelectric conversion material formed of a thermoelectric semiconductor composition, including (A) a step of forming a sacrificial layer (2) on a substrate (1), (B) a step of forming a chip of a thermoelectric conversion material on the sacrificial layer formed in the step (A), (C) a step of annealing the chip of a thermoelectric conversion material formed in the step (B), and (D) a step of peeling the chip of a thermoelectric conversion material annealed in the step (C); and a method for producing a thermoelectric conversion module using the chip produced according to the production method.
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公开(公告)号：US11581470B2
公开(公告)日：2023-02-14
申请号：US17271057
申请日：2019-08-27
Applicant: LINTEC CORPORATION
Inventor： Wataru Morita , Kunihisa Kato , Tsuyoshi Muto , Yuma Katsuta
Abstract: The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate.
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公开(公告)号：US11522114B2
公开(公告)日：2022-12-06
申请号：US16467745
申请日：2017-12-07
Applicant: LINTEC CORPORATION
Inventor： Kunihisa Kato , Wataru Morita , Tsuyoshi Mutou , Yuma Katsuta , Takeshi Kondo
Abstract: The present invention provides: a thermoelectric conversion material capable of being produced in a simplified manner and at a lower cost and excellent in thermoelectric performance and flexibility, and a method for producing the material. The thermoelectric conversion material has, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound. The method for producing a thermoelectric conversion material having, on a support, a thin film of a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound includes a step of applying a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat-resistant resin and an inorganic ionic compound onto a support and drying it to form a thin film thereon, and a step of annealing the thin film.
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公开(公告)号：US11424397B2
公开(公告)日：2022-08-23
申请号：US16493345
申请日：2018-03-13
Applicant: LINTEC CORPORATION
Inventor： Kunihisa Kato , Wataru Morita , Tsuyoshi Muto , Yuma Katsuta
Abstract: Provided are an electrode material for thermoelectric conversion modules capable of preventing cracking and peeling of electrodes that may occur at the bonding parts of a thermoelectric element and an electrode under high-temperature conditions to thereby maintain a low resistance at the bonding parts, and a thermoelectric conversion module using the material. The electrode material for thermoelectric conversion modules includes a first substrate and a second substrate facing each other, a thermoelectric element formed between the first substrate and the second substrate, and an electrode formed on at least one substrate of the first substrate and the second substrate, wherein the substrate is a plastic film, the thermoelectric element contains a bismuth-tellurium-based thermoelectric semiconductor material, a telluride-based thermoelectric semiconductor material, an antimony-tellurium-based thermoelectric semiconductor material, or a bismuth-selenide-based thermoelectric semiconductor material, the electrode that is in contact with the thermoelectric element is formed of a metal material, and the metal material is gold, nickel, aluminum, rhodium, platinum, chromium, palladium, stainless steel, molybdenum or an alloy containing any of these metals.
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