公开(公告)号：US20070243721A1

公开(公告)日：2007-10-18

申请号：US11763226

申请日：2007-06-14

申请人： LUC AUTRYVE ,  Christopher Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

发明人： LUC AUTRYVE ,  Christopher Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

IPC分类号： H01L21/3105

CPC分类号： H01L21/26513 ,  H01L21/268

摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.

摘要翻译： 一种处理衬底的方法，包括在衬底上沉积包含无定形碳的层，然后将衬底暴露于电磁辐射，在足以将该层加热至至少至少的温度的条件下，具有约600nm至约1000nm之间的一个或多个波长 提供约300℃。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 在一个方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收电磁辐射并退火衬底的顶表面层。 在一个方面，基板在激光退火工艺中暴露于电磁辐射。

公开(公告)号：US20050074986A1

公开(公告)日：2005-04-07

申请号：US10758758

申请日：2004-01-15

申请人： Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

发明人： Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

IPC分类号： H01L21/027 ,  H01L21/265 ,  H01L21/268 ,  H01L21/314 ,  H01L21/324 ,  H01L21/20

CPC分类号： H01L21/3146 ,  H01L21/0276 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324

摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.

摘要翻译： 一种处理衬底的方法，包括在衬底上沉积包含无定形碳的层，然后将衬底暴露于电磁辐射，在足以将该层加热至至少至少的温度的条件下，具有约600nm至约1000nm之间的一个或多个波长 提供约300℃。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 在一个方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收电磁辐射并退火衬底的顶表面层。 在一个方面，基板在激光退火工艺中暴露于电磁辐射。

公开(公告)号：US20050074956A1

公开(公告)日：2005-04-07

申请号：US10679189

申请日：2003-10-03

申请人： Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

发明人： Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

IPC分类号： H01L21/027 ,  H01L21/265 ,  H01L21/268 ,  H01L21/314 ,  H01L21/324 ,  H01L21/425 ,  H01L21/26 ,  H01L21/31 ,  H01L21/42 ,  H01L21/469 ,  H01L21/477

CPC分类号： H01L21/3146 ,  H01L21/0276 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/324

摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.

摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含非晶碳的层，然后激光退火衬底。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 一方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收由激光发射的电磁辐射并退火衬底的顶表面层。

公开(公告)号：US20060292808A1

公开(公告)日：2006-12-28

申请号：US11467074

申请日：2006-08-24

申请人： Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

发明人： Luc Autryve ,  Chris Bencher ,  Dean Jennings ,  Haifan Liang ,  Abhilash Mayur ,  Mark Yam ,  Wendy Yeh ,  Richard Brough

IPC分类号： H01L21/336

CPC分类号： H01L21/02115 ,  H01L21/02274 ,  H01L21/02354 ,  H01L21/0276 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/3146 ,  H01L21/324

摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.

摘要翻译： 提供一种处理衬底的方法，包括在衬底上沉积包含非晶碳的层，然后激光退火衬底。 任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。 一方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收由激光发射的电磁辐射并退火衬底的顶表面层。

公开(公告)号：US08242407B2

公开(公告)日：2012-08-14

申请号：US12825200

申请日：2010-06-28

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： B23K26/067

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US07595208B2

公开(公告)日：2009-09-29

申请号：US11837055

申请日：2007-08-10

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 例如，将发射为10.6μm的CO 2的第一激光源聚焦在作为线束的硅晶片上的第一激光源和例如在808nm发射的GaAs激光棒的第二激光源的热处理装置和方法是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US07279721B2

公开(公告)日：2007-10-09

申请号：US11105270

申请日：2005-04-13

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L33/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 将以10.6μm发光的第一激光源例如CO 2 2作为线束和第二激光源聚焦在硅晶片上的热处理装置和方法，例如， 在808nm处发射的GaAs激光棒作为围绕线束的较大光束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO 2辐射的能量小于硅带隙能量，因此硅对其透明，但是长波长辐射被自由载流子吸收。

公开(公告)号：US07772134B2

公开(公告)日：2010-08-10

申请号：US12546522

申请日：2009-08-24

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L21/00

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20060234458A1

公开(公告)日：2006-10-19

申请号：US11105270

申请日：2005-04-13

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Ranish

IPC分类号： H01L21/336

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

摘要翻译： 将以10.6μm发光的第一激光源例如CO 2 2作为线束和第二激光源聚焦在硅晶片上的热处理装置和方法，例如， 在808nm处发射的GaAs激光棒作为围绕线束的较大光束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO 2辐射的能量小于硅带隙能量，因此硅对其透明，但是长波长辐射被自由载流子吸收。

公开(公告)号：US20060286763A1

公开(公告)日：2006-12-21

申请号：US11428758

申请日：2006-07-05

申请人： Yi Ma ,  Khaled Ahmed ,  Kevin Cunningham ,  Robert McIntosh ,  Abhilash Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Miner

发明人： Yi Ma ,  Khaled Ahmed ,  Kevin Cunningham ,  Robert McIntosh ,  Abhilash Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Miner

IPC分类号： H01L21/76

CPC分类号： H01L21/268 ,  H01L21/28035 ,  H01L21/324

摘要： Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.

摘要翻译： 本发明的实施方案通常提供了在衬底上形成掺杂的含硅材料的方法。 在一个实施例中，该方法提供在电介质层上沉积多晶层并且用掺杂剂注入多晶层以形成掺杂浓度在约1×10 19原子/ cm 2范围内的掺杂多晶层 其中掺杂的多晶层含有硅或可含锗，碳或硼。 在快速热退火期间，衬底可以被加热到约800℃或更高，例如约1000℃的温度。 随后，掺杂多晶层可以暴露于激光退火并加热至约1000℃或更高的温度，例如在约1050℃至约1400℃的温度下，持续约500毫秒或更短 ，例如约100毫秒或更少。