公开(公告)号：US20170365974A1

公开(公告)日：2017-12-21

申请号：US15182841

申请日：2016-06-15

Applicant: LUMINIT LLC

Inventor： Russell KURTZ ,  Alkan GULSES

IPC: H01S3/106 ,  H01S3/11 ,  G01N33/00 ,  G01N21/39 ,  H01S3/094 ,  H01S3/16 ,  H01S3/0941

CPC classification number: H01S3/1062 ,  G01N21/3504 ,  G01N21/359 ,  G01N21/39 ,  G01N33/004 ,  G01N33/0047 ,  G01N2021/1795 ,  G01N2021/396 ,  H01S3/061 ,  H01S3/0809 ,  H01S3/094076 ,  H01S3/0941 ,  H01S3/10061 ,  H01S3/1103 ,  H01S3/1608 ,  H01S3/1643 ,  H01S2302/00

Abstract: A short-pulse, narrowband, line-selectable and tunable solid-state laser is described. The device requires a pump source, an active solid-state laser medium, an enclosing cavity, mirrors to contain the light, a method of removing the pulse from the cavity, a wavelength selection system, and a laser linewidth narrowing system. One implementation of this is an Er:YAG laser, side pumped by semiconductor lasers in the erbium absorption band near 1475 nm, with an intracavity etalon and a switchable spectral filter. To remove the pulse from the cavity, cavity dumping issues, which assures constant pulse energy and pulse length over a range of repetition rates, in this case from 100 Hz to 20 kHz. Line selection is obtained by use of wavelength filters and fine tuning with an etalon, which also acts as the linewidth narrowing system.

公开(公告)号：US20190097389A1

公开(公告)日：2019-03-28

申请号：US16116509

申请日：2018-08-29

Applicant: LUMINIT LLC

Inventor： Alkan Gulses ,  Russell KURTZ

IPC: H01S5/062 ,  H01S5/183 ,  H01S5/14

Abstract: The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs.